CH410195A - Dispositif à semi-conducteur, hermétiquement fermé, et procédé de fabrication de ce dispositif - Google Patents

Dispositif à semi-conducteur, hermétiquement fermé, et procédé de fabrication de ce dispositif

Info

Publication number
CH410195A
CH410195A CH519560A CH519560A CH410195A CH 410195 A CH410195 A CH 410195A CH 519560 A CH519560 A CH 519560A CH 519560 A CH519560 A CH 519560A CH 410195 A CH410195 A CH 410195A
Authority
CH
Switzerland
Prior art keywords
manufacturing
hermetically sealed
semiconductor device
semiconductor
hermetically
Prior art date
Application number
CH519560A
Other languages
English (en)
French (fr)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CH410195A publication Critical patent/CH410195A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10W70/415—
    • H10W70/658—
    • H10W76/157—
    • H10W72/07353—
    • H10W72/07554—
    • H10W72/334—
    • H10W72/536—
    • H10W72/5453—
    • H10W72/5473—
    • H10W72/884—
    • H10W72/931—
    • H10W90/734—
    • H10W90/754—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacture Of Switches (AREA)
CH519560A 1959-05-06 1960-05-06 Dispositif à semi-conducteur, hermétiquement fermé, et procédé de fabrication de ce dispositif CH410195A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US811470A US3072832A (en) 1959-05-06 1959-05-06 Semiconductor structure fabrication
US46742865A 1965-06-28 1965-06-28
US60972067A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
CH410195A true CH410195A (fr) 1966-03-31

Family

ID=27413014

Family Applications (1)

Application Number Title Priority Date Filing Date
CH519560A CH410195A (fr) 1959-05-06 1960-05-06 Dispositif à semi-conducteur, hermétiquement fermé, et procédé de fabrication de ce dispositif

Country Status (7)

Country Link
US (1) US3072832A (index.php)
CH (1) CH410195A (index.php)
DE (2) DE1283965B (index.php)
GB (1) GB958241A (index.php)
LU (1) LU38605A1 (index.php)
MY (1) MY6900309A (index.php)
NL (1) NL251301A (index.php)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB985864A (en) * 1960-08-05 1965-03-10 Telefunken Patent A semiconductor device
BE624958A (index.php) * 1961-11-20
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator
BE631066A (index.php) * 1962-04-16
NL292051A (index.php) * 1962-04-27
US3303265A (en) * 1962-05-17 1967-02-07 Texas Instruments Inc Miniature semiconductor enclosure
US3271625A (en) * 1962-08-01 1966-09-06 Signetics Corp Electronic package assembly
NL298196A (index.php) * 1962-09-22
US3274456A (en) * 1962-11-21 1966-09-20 Gen Instrument Corp Rectifier assembly and method of making same
US3325586A (en) * 1963-03-05 1967-06-13 Fairchild Camera Instr Co Circuit element totally encapsulated in glass
US3311798A (en) * 1963-09-27 1967-03-28 Trw Semiconductors Inc Component package
US3185865A (en) * 1963-03-26 1965-05-25 Bert W Larey Transistoried multivibrator with built-in time delay
US3231797A (en) * 1963-09-20 1966-01-25 Nat Semiconductor Corp Semiconductor device
US3383454A (en) * 1964-01-10 1968-05-14 Gti Corp Micromodular package
US3341649A (en) * 1964-01-17 1967-09-12 Signetics Corp Modular package for semiconductor devices
US3324530A (en) * 1964-07-24 1967-06-13 Ralph L Sherwood Connector support assembly for transistor connector and method of making the support assembly
US3312771A (en) * 1964-08-07 1967-04-04 Nat Beryllia Corp Microelectronic package
DE1514273B2 (de) * 1964-08-21 1974-08-22 Nippon Electric Co., Ltd., Tokio Halbleiteranordmng
US3340347A (en) * 1964-10-12 1967-09-05 Corning Glass Works Enclosed electronic device
US3388301A (en) * 1964-12-09 1968-06-11 Signetics Corp Multichip integrated circuit assembly with interconnection structure
US3349481A (en) * 1964-12-29 1967-10-31 Alpha Microelectronics Company Integrated circuit sealing method and structure
US3340602A (en) * 1965-02-01 1967-09-12 Philco Ford Corp Process for sealing
US3265806A (en) * 1965-04-05 1966-08-09 Sprague Electric Co Encapsulated flat package for electronic parts
US3374533A (en) * 1965-05-26 1968-03-26 Sprague Electric Co Semiconductor mounting and assembly method
US3522490A (en) * 1965-06-28 1970-08-04 Texas Instruments Inc Semiconductor package with heat conducting mounting extending from package on side opposite conductor extensions
US3386015A (en) * 1965-10-21 1968-05-28 Texas Instruments Inc Semiconductor element having an organic silicone base cement
US3271507A (en) * 1965-11-02 1966-09-06 Alloys Unltd Inc Flat package for semiconductors
US3404215A (en) * 1966-04-14 1968-10-01 Sprague Electric Co Hermetically sealed electronic module
US3388302A (en) * 1966-12-30 1968-06-11 Coors Porcelain Co Ceramic housing for semiconductor components
US3497774A (en) * 1967-06-07 1970-02-24 Beckman Instruments Inc Electrical circuit module and method of manufacture
US3502786A (en) * 1967-06-14 1970-03-24 Milton Stoll Flat pack spacer of low thermal diffusivity
US3538597A (en) * 1967-07-13 1970-11-10 Us Navy Flatpack lid and method
US3495023A (en) * 1968-06-14 1970-02-10 Nat Beryllia Corp Flat pack having a beryllia base and an alumina ring
US3792525A (en) * 1971-08-04 1974-02-19 Gen Motors Corp Method of making a semiconductive signal translating device
US3919602A (en) * 1972-03-23 1975-11-11 Bosch Gmbh Robert Electric circuit arrangement and method of making the same
JPS545264B1 (index.php) * 1975-05-19 1979-03-15
US4402134A (en) * 1977-11-14 1983-09-06 Edison International, Inc. Method of making an integrated display device
US4291815B1 (en) * 1980-02-19 1998-09-29 Semiconductor Packaging Materi Ceramic lid assembly for hermetic sealing of a semiconductor chip
US5134462A (en) * 1990-08-27 1992-07-28 Motorola, Inc. Flexible film chip carrier having a flexible film substrate and means for maintaining planarity of the substrate
US20070026691A1 (en) * 2005-07-07 2007-02-01 Mks Instruments Inc. Low-field non-contact charging apparatus for testing substrates

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2773239A (en) * 1956-12-04 Electrical indicating instruments
GB786299A (index.php) * 1900-01-01
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
CH162656A (de) * 1930-10-17 1933-06-30 Ig Farbenindustrie Ag Verfahren zur Herstellung des Natriumsalzes einer Wismutkomplexverbindung von Brenzcatechinarsinsäure.
US2446254A (en) * 1942-12-07 1948-08-03 Hartford Nat Bank & Trust Co Blocking-layer cell
US2441590A (en) * 1944-03-24 1948-05-18 Bell Telephone Labor Inc Translating device
NL66936C (index.php) * 1946-03-04
NL84061C (index.php) * 1948-06-26
NL91400C (index.php) * 1950-06-28
US2762954A (en) * 1950-09-09 1956-09-11 Sylvania Electric Prod Method for assembling transistors
GB691708A (en) * 1951-04-03 1953-05-20 British Thomson Houston Co Ltd Improvements in and relating to crystal valves or rectifiers
DE950491C (de) * 1951-09-15 1956-10-11 Gen Electric Gleichrichterelement
US2743430A (en) * 1952-03-01 1956-04-24 Rca Corp Information storage devices
BE520380A (index.php) * 1952-06-02
US2641717A (en) * 1952-08-28 1953-06-09 Us Navy Transistor one-shot multivibrator
NL178165B (nl) * 1953-05-07 1900-01-01 Bristol Myers Co Werkwijze voor het bereiden of vervaardigen van een geneesmiddel met bloeddrukverlagende en/of bloedplaatjesaggregatie tegenwerkende activiteit; werkwijze voor het bereiden van een verbinding met een dergelijke activiteit.
US2827574A (en) * 1953-08-24 1958-03-18 Hoffman Electronics Corp Multivibrators
US2804581A (en) * 1953-10-05 1957-08-27 Sarkes Tarzian Semiconductor device and method of manufacture thereof
NL91651C (index.php) * 1953-12-09
GB780251A (en) * 1954-02-18 1957-07-31 Pye Ltd Improvements in or relating to junction transistors
US2788300A (en) * 1954-03-10 1957-04-09 Sylvania Electric Prod Processing of alloy junction devices
NL203694A (index.php) * 1955-04-04 1900-01-01
US2846655A (en) * 1955-08-19 1958-08-05 Hughes Aircraft Co Impregnated ferrite
GB809970A (en) * 1955-09-12 1959-03-04 Siemens Ag Improvements in or relating to hall voltage generators
DE1069719B (index.php) * 1955-11-09 1959-11-26
US2883592A (en) * 1955-12-30 1959-04-21 Gen Electric Encapsulated selenium rectifiers
GB806789A (en) * 1956-01-27 1958-12-31 Gen Electric Co Ltd Improvements in or relating to cadmium sulphide
US2889952A (en) * 1956-02-01 1959-06-09 Corning Glass Works Composite article and method
US2905873A (en) * 1956-09-17 1959-09-22 Rca Corp Semiconductor power devices and method of manufacture
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
US3021461A (en) * 1958-09-10 1962-02-13 Gen Electric Semiconductor device
US2985806A (en) * 1958-12-24 1961-05-23 Philco Corp Semiconductor fabrication
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly

Also Published As

Publication number Publication date
US3072832A (en) 1963-01-08
GB958241A (en) 1964-05-21
NL251301A (index.php) 1900-01-01
LU38605A1 (index.php)
DE1283965B (de) 1968-11-28
MY6900309A (en) 1969-12-31
DE1186951B (de) 1965-02-11

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