CH349703A - Procédé de fabrication d'un dispositif semi-conducteur - Google Patents

Procédé de fabrication d'un dispositif semi-conducteur

Info

Publication number
CH349703A
CH349703A CH349703DA CH349703A CH 349703 A CH349703 A CH 349703A CH 349703D A CH349703D A CH 349703DA CH 349703 A CH349703 A CH 349703A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
Souther Fuller Calvin
Tanenbaum Morris
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH349703A publication Critical patent/CH349703A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/00—
    • H10P95/00—
    • H10P95/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10W72/07554—
    • H10W72/5522—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
CH349703D 1955-06-20 1956-06-20 Procédé de fabrication d'un dispositif semi-conducteur CH349703A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US516674A US2861018A (en) 1955-06-20 1955-06-20 Fabrication of semiconductive devices

Publications (1)

Publication Number Publication Date
CH349703A true CH349703A (fr) 1960-10-31

Family

ID=24056633

Family Applications (1)

Application Number Title Priority Date Filing Date
CH349703D CH349703A (fr) 1955-06-20 1956-06-20 Procédé de fabrication d'un dispositif semi-conducteur

Country Status (7)

Country Link
US (1) US2861018A (cg-RX-API-DMAC10.html)
BE (1) BE547274A (cg-RX-API-DMAC10.html)
CH (1) CH349703A (cg-RX-API-DMAC10.html)
DE (1) DE1033787B (cg-RX-API-DMAC10.html)
FR (1) FR1152654A (cg-RX-API-DMAC10.html)
GB (1) GB809643A (cg-RX-API-DMAC10.html)
NL (1) NL207910A (cg-RX-API-DMAC10.html)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US3114865A (en) * 1956-08-08 1963-12-17 Bendix Corp Semiconductor and unitary connector structure comprising alternately stacked base andemitter leads
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
NL113333C (cg-RX-API-DMAC10.html) * 1957-09-19
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
NL241124A (cg-RX-API-DMAC10.html) * 1958-07-09
BE580254A (cg-RX-API-DMAC10.html) * 1958-07-17
NL121500C (cg-RX-API-DMAC10.html) * 1958-09-02
NL113317C (cg-RX-API-DMAC10.html) * 1958-09-16 1900-01-01
US3104991A (en) * 1958-09-23 1963-09-24 Raytheon Co Method of preparing semiconductor material
US3054034A (en) * 1958-10-01 1962-09-11 Rca Corp Semiconductor devices and method of manufacture thereof
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
US3041213A (en) * 1958-11-17 1962-06-26 Texas Instruments Inc Diffused junction semiconductor device and method of making
US2956913A (en) * 1958-11-20 1960-10-18 Texas Instruments Inc Transistor and method of making same
US2974073A (en) * 1958-12-04 1961-03-07 Rca Corp Method of making phosphorus diffused silicon semiconductor devices
NL135006C (cg-RX-API-DMAC10.html) * 1958-12-24
US3001896A (en) * 1958-12-24 1961-09-26 Ibm Diffusion control in germanium
NL246032A (cg-RX-API-DMAC10.html) * 1959-01-27
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps
US3099588A (en) * 1959-03-11 1963-07-30 Westinghouse Electric Corp Formation of semiconductor transition regions by alloy vaporization and deposition
NL125412C (cg-RX-API-DMAC10.html) * 1959-04-15
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
DE1124155B (de) * 1959-07-04 1962-02-22 Telefunken Patent Verfahren zur Herstellung eines nipin-Transistors
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3105177A (en) * 1959-11-23 1963-09-24 Bell Telephone Labor Inc Semiconductive device utilizing quantum-mechanical tunneling
DE1166937B (de) * 1959-12-16 1964-04-02 Siemens Ag Verfahren zum Herstellen von Halbleiterbauelementen
NL262701A (cg-RX-API-DMAC10.html) * 1960-03-25
NL127213C (cg-RX-API-DMAC10.html) * 1960-06-10
DE1159096B (de) * 1960-12-05 1963-12-12 Fairchild Camera Instr Co Vierzonen-Halbleiterbauelement, insbesondere Transistor, zum Schalten mit einem pnpn-Halbleiterkoerper
NL274818A (cg-RX-API-DMAC10.html) * 1961-02-20
NL268355A (cg-RX-API-DMAC10.html) * 1961-08-17
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
US3239376A (en) * 1962-06-29 1966-03-08 Bell Telephone Labor Inc Electrodes to semiconductor wafers
GB1026489A (en) * 1963-11-15 1966-04-20 Standard Telephones Cables Ltd Semiconductor device fabrication
US3421943A (en) * 1964-02-14 1969-01-14 Westinghouse Electric Corp Solar cell panel having cell edge and base metal electrical connections
GB1045515A (en) * 1964-04-22 1966-10-12 Westinghouse Electric Corp Electrolyte and diffusion process
GB1068392A (en) * 1965-05-05 1967-05-10 Lucas Industries Ltd Semi-conductor devices
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity
US3475235A (en) * 1966-10-05 1969-10-28 Westinghouse Electric Corp Process for fabricating a semiconductor device
US3562610A (en) * 1967-05-25 1971-02-09 Westinghouse Electric Corp Controlled rectifier with improved switching characteristics
US3521134A (en) * 1968-11-14 1970-07-21 Hewlett Packard Co Semiconductor connection apparatus
US3836399A (en) * 1970-02-16 1974-09-17 Texas Instruments Inc PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg
US3943016A (en) * 1970-12-07 1976-03-09 General Electric Company Gallium-phosphorus simultaneous diffusion process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (cg-RX-API-DMAC10.html) * 1949-11-30
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
NL93573C (cg-RX-API-DMAC10.html) * 1952-11-18
BE525428A (cg-RX-API-DMAC10.html) * 1952-12-30

Also Published As

Publication number Publication date
GB809643A (en) 1959-02-25
US2861018A (en) 1958-11-18
FR1152654A (fr) 1958-02-21
DE1033787B (de) 1958-07-10
BE547274A (cg-RX-API-DMAC10.html)
NL207910A (cg-RX-API-DMAC10.html)

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