|
US2861017A
(en)
*
|
1953-09-30 |
1958-11-18 |
Honeywell Regulator Co |
Method of preparing semi-conductor devices
|
|
NL96864C
(cg-RX-API-DMAC10.html)
*
|
1954-01-14 |
1900-01-01 |
|
|
|
GB774388A
(en)
*
|
1954-01-28 |
1957-05-08 |
Marconi Wireless Telegraph Co |
Improvements in or relating to semi-conducting amplifiers
|
|
BE536020A
(cg-RX-API-DMAC10.html)
*
|
1954-02-27 |
|
|
|
|
BE536150A
(cg-RX-API-DMAC10.html)
*
|
1954-03-05 |
|
|
|
|
US2743200A
(en)
*
|
1954-05-27 |
1956-04-24 |
Bell Telephone Labor Inc |
Method of forming junctions in silicon
|
|
US2750310A
(en)
*
|
1954-07-17 |
1956-06-12 |
Joachim I Franke |
Manufacture process of doped germanium crystals
|
|
NL103256C
(cg-RX-API-DMAC10.html)
*
|
1954-10-29 |
|
|
|
|
US2820154A
(en)
*
|
1954-11-15 |
1958-01-14 |
Rca Corp |
Semiconductor devices
|
|
US2999776A
(en)
*
|
1955-01-13 |
1961-09-12 |
Siemens Ag |
Method of producing differentiated doping zones in semiconductor crystals
|
|
US2950219A
(en)
*
|
1955-02-23 |
1960-08-23 |
Rauland Corp |
Method of manufacturing semiconductor crystals
|
|
US2763822A
(en)
*
|
1955-05-10 |
1956-09-18 |
Westinghouse Electric Corp |
Silicon semiconductor devices
|
|
BE547274A
(cg-RX-API-DMAC10.html)
*
|
1955-06-20 |
|
|
|
|
US3062690A
(en)
*
|
1955-08-05 |
1962-11-06 |
Hoffman Electronics Corp |
Semi-conductor device and method of making the same
|
|
BE551378A
(cg-RX-API-DMAC10.html)
*
|
1955-09-30 |
|
|
|
|
US2849665A
(en)
*
|
1955-10-17 |
1958-08-26 |
Westinghouse Electric Corp |
Ultra high power transistor
|
|
US2863105A
(en)
*
|
1955-11-10 |
1958-12-02 |
Hoffman Electronics Corp |
Rectifying device
|
|
US2925501A
(en)
*
|
1956-01-20 |
1960-02-16 |
Texas Instruments Inc |
Discriminator circuit
|
|
DE1043472B
(de)
*
|
1956-02-06 |
1958-11-13 |
Siemens Ag |
Halbleiterbauelement zur Stromstabilisierung
|
|
US2994834A
(en)
*
|
1956-02-29 |
1961-08-01 |
Baldwin Piano Co |
Transistor amplifiers
|
|
BE556337A
(cg-RX-API-DMAC10.html)
*
|
1956-04-03 |
|
|
|
|
BE556305A
(cg-RX-API-DMAC10.html)
*
|
1956-04-18 |
|
|
|
|
US2967952A
(en)
*
|
1956-04-25 |
1961-01-10 |
Shockley William |
Semiconductor shift register
|
|
US2836523A
(en)
*
|
1956-08-02 |
1958-05-27 |
Bell Telephone Labor Inc |
Manufacture of semiconductive devices
|
|
NL106110C
(cg-RX-API-DMAC10.html)
*
|
1956-08-24 |
|
|
|
|
DE1080696B
(de)
*
|
1956-12-10 |
1960-04-28 |
Stanislas Teszner |
Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
|
|
US2985550A
(en)
*
|
1957-01-04 |
1961-05-23 |
Texas Instruments Inc |
Production of high temperature alloyed semiconductors
|
|
US3086281A
(en)
*
|
1957-05-06 |
1963-04-23 |
Shockley William |
Semiconductor leads and method of attaching
|
|
US3089070A
(en)
*
|
1957-09-03 |
1963-05-07 |
Hoffman Electronics Corp |
Photoelectric converter or the like
|
|
GB849477A
(en)
*
|
1957-09-23 |
1960-09-28 |
Nat Res Dev |
Improvements in or relating to semiconductor control devices
|
|
US3008089A
(en)
*
|
1958-02-20 |
1961-11-07 |
Bell Telephone Labor Inc |
Semiconductive device comprising p-i-n conductivity layers
|
|
US3098160A
(en)
*
|
1958-02-24 |
1963-07-16 |
Clevite Corp |
Field controlled avalanche semiconductive device
|
|
US3038085A
(en)
*
|
1958-03-25 |
1962-06-05 |
Rca Corp |
Shift-register utilizing unitary multielectrode semiconductor device
|
|
NL240714A
(cg-RX-API-DMAC10.html)
*
|
1958-07-02 |
|
|
|
|
US3083441A
(en)
*
|
1959-04-13 |
1963-04-02 |
Texas Instruments Inc |
Method for fabricating transistors
|
|
US3124640A
(en)
*
|
1960-01-20 |
1964-03-10 |
|
Figure |
|
GB1031451A
(en)
*
|
1961-08-03 |
1966-06-02 |
Lucas Industries Ltd |
Controlled rectifiers
|
|
NL291461A
(cg-RX-API-DMAC10.html)
*
|
1962-04-18 |
|
|
|
|
PL2687354T3
(pl)
|
2012-07-17 |
2017-09-29 |
Basf Se |
Termoplastyczne płyty z tworzywa piankowego o grubości spoiny od 30 do 200 mikrometrów
|