BE547274A - - Google Patents
Info
- Publication number
- BE547274A BE547274A BE547274DA BE547274A BE 547274 A BE547274 A BE 547274A BE 547274D A BE547274D A BE 547274DA BE 547274 A BE547274 A BE 547274A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/00—
-
- H10P95/00—
-
- H10P95/50—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H10W72/07554—
-
- H10W72/5522—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US516674A US2861018A (en) | 1955-06-20 | 1955-06-20 | Fabrication of semiconductive devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE547274A true BE547274A (cg-RX-API-DMAC10.html) |
Family
ID=24056633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE547274D BE547274A (cg-RX-API-DMAC10.html) | 1955-06-20 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2861018A (cg-RX-API-DMAC10.html) |
| BE (1) | BE547274A (cg-RX-API-DMAC10.html) |
| CH (1) | CH349703A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1033787B (cg-RX-API-DMAC10.html) |
| FR (1) | FR1152654A (cg-RX-API-DMAC10.html) |
| GB (1) | GB809643A (cg-RX-API-DMAC10.html) |
| NL (1) | NL207910A (cg-RX-API-DMAC10.html) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
| US3114865A (en) * | 1956-08-08 | 1963-12-17 | Bendix Corp | Semiconductor and unitary connector structure comprising alternately stacked base andemitter leads |
| US3145328A (en) * | 1957-04-29 | 1964-08-18 | Raytheon Co | Methods of preventing channel formation on semiconductive bodies |
| US2989426A (en) * | 1957-06-06 | 1961-06-20 | Ibm | Method of transistor manufacture |
| NL113333C (cg-RX-API-DMAC10.html) * | 1957-09-19 | |||
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
| NL241124A (cg-RX-API-DMAC10.html) * | 1958-07-09 | |||
| BE580254A (cg-RX-API-DMAC10.html) * | 1958-07-17 | |||
| NL121500C (cg-RX-API-DMAC10.html) * | 1958-09-02 | |||
| NL113317C (cg-RX-API-DMAC10.html) * | 1958-09-16 | 1900-01-01 | ||
| US3104991A (en) * | 1958-09-23 | 1963-09-24 | Raytheon Co | Method of preparing semiconductor material |
| US3054034A (en) * | 1958-10-01 | 1962-09-11 | Rca Corp | Semiconductor devices and method of manufacture thereof |
| US2992471A (en) * | 1958-11-04 | 1961-07-18 | Bell Telephone Labor Inc | Formation of p-n junctions in p-type semiconductors |
| US3041213A (en) * | 1958-11-17 | 1962-06-26 | Texas Instruments Inc | Diffused junction semiconductor device and method of making |
| US2956913A (en) * | 1958-11-20 | 1960-10-18 | Texas Instruments Inc | Transistor and method of making same |
| US2974073A (en) * | 1958-12-04 | 1961-03-07 | Rca Corp | Method of making phosphorus diffused silicon semiconductor devices |
| NL135006C (cg-RX-API-DMAC10.html) * | 1958-12-24 | |||
| US3001896A (en) * | 1958-12-24 | 1961-09-26 | Ibm | Diffusion control in germanium |
| NL246032A (cg-RX-API-DMAC10.html) * | 1959-01-27 | |||
| DE1132247B (de) * | 1959-01-30 | 1962-06-28 | Siemens Ag | Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps |
| US3099588A (en) * | 1959-03-11 | 1963-07-30 | Westinghouse Electric Corp | Formation of semiconductor transition regions by alloy vaporization and deposition |
| NL125412C (cg-RX-API-DMAC10.html) * | 1959-04-15 | |||
| US3070466A (en) * | 1959-04-30 | 1962-12-25 | Ibm | Diffusion in semiconductor material |
| US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
| US2971139A (en) * | 1959-06-16 | 1961-02-07 | Fairchild Semiconductor | Semiconductor switching device |
| US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
| DE1124155B (de) * | 1959-07-04 | 1962-02-22 | Telefunken Patent | Verfahren zur Herstellung eines nipin-Transistors |
| US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
| US3105177A (en) * | 1959-11-23 | 1963-09-24 | Bell Telephone Labor Inc | Semiconductive device utilizing quantum-mechanical tunneling |
| DE1166937B (de) * | 1959-12-16 | 1964-04-02 | Siemens Ag | Verfahren zum Herstellen von Halbleiterbauelementen |
| NL262701A (cg-RX-API-DMAC10.html) * | 1960-03-25 | |||
| NL127213C (cg-RX-API-DMAC10.html) * | 1960-06-10 | |||
| DE1159096B (de) * | 1960-12-05 | 1963-12-12 | Fairchild Camera Instr Co | Vierzonen-Halbleiterbauelement, insbesondere Transistor, zum Schalten mit einem pnpn-Halbleiterkoerper |
| NL274818A (cg-RX-API-DMAC10.html) * | 1961-02-20 | |||
| NL268355A (cg-RX-API-DMAC10.html) * | 1961-08-17 | |||
| US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
| US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
| US3183128A (en) * | 1962-06-11 | 1965-05-11 | Fairchild Camera Instr Co | Method of making field-effect transistors |
| US3239376A (en) * | 1962-06-29 | 1966-03-08 | Bell Telephone Labor Inc | Electrodes to semiconductor wafers |
| GB1026489A (en) * | 1963-11-15 | 1966-04-20 | Standard Telephones Cables Ltd | Semiconductor device fabrication |
| US3421943A (en) * | 1964-02-14 | 1969-01-14 | Westinghouse Electric Corp | Solar cell panel having cell edge and base metal electrical connections |
| GB1045515A (en) * | 1964-04-22 | 1966-10-12 | Westinghouse Electric Corp | Electrolyte and diffusion process |
| GB1068392A (en) * | 1965-05-05 | 1967-05-10 | Lucas Industries Ltd | Semi-conductor devices |
| US3468729A (en) * | 1966-03-21 | 1969-09-23 | Westinghouse Electric Corp | Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity |
| US3475235A (en) * | 1966-10-05 | 1969-10-28 | Westinghouse Electric Corp | Process for fabricating a semiconductor device |
| US3562610A (en) * | 1967-05-25 | 1971-02-09 | Westinghouse Electric Corp | Controlled rectifier with improved switching characteristics |
| US3521134A (en) * | 1968-11-14 | 1970-07-21 | Hewlett Packard Co | Semiconductor connection apparatus |
| US3836399A (en) * | 1970-02-16 | 1974-09-17 | Texas Instruments Inc | PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg |
| US3943016A (en) * | 1970-12-07 | 1976-03-09 | General Electric Company | Gallium-phosphorus simultaneous diffusion process |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL82014C (cg-RX-API-DMAC10.html) * | 1949-11-30 | |||
| US2654059A (en) * | 1951-05-26 | 1953-09-29 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
| NL93573C (cg-RX-API-DMAC10.html) * | 1952-11-18 | |||
| BE525428A (cg-RX-API-DMAC10.html) * | 1952-12-30 |
-
0
- BE BE547274D patent/BE547274A/xx unknown
- NL NL207910D patent/NL207910A/xx unknown
-
1955
- 1955-06-20 US US516674A patent/US2861018A/en not_active Expired - Lifetime
-
1956
- 1956-04-05 FR FR1152654D patent/FR1152654A/fr not_active Expired
- 1956-05-23 DE DEW19096A patent/DE1033787B/de active Pending
- 1956-06-13 GB GB18258/56A patent/GB809643A/en not_active Expired
- 1956-06-20 CH CH349703D patent/CH349703A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH349703A (fr) | 1960-10-31 |
| GB809643A (en) | 1959-02-25 |
| US2861018A (en) | 1958-11-18 |
| FR1152654A (fr) | 1958-02-21 |
| DE1033787B (de) | 1958-07-10 |
| NL207910A (cg-RX-API-DMAC10.html) |