CA980918A - Method of forming a nickel electrode on a silicon substrate - Google Patents

Method of forming a nickel electrode on a silicon substrate

Info

Publication number
CA980918A
CA980918A CA170,129A CA170129A CA980918A CA 980918 A CA980918 A CA 980918A CA 170129 A CA170129 A CA 170129A CA 980918 A CA980918 A CA 980918A
Authority
CA
Canada
Prior art keywords
forming
silicon substrate
nickel electrode
nickel
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA170,129A
Other languages
English (en)
Other versions
CA170129S (en
Inventor
Yoshimi Tanaka
Hirotsugu Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of CA980918A publication Critical patent/CA980918A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
CA170,129A 1972-05-02 1973-05-01 Method of forming a nickel electrode on a silicon substrate Expired CA980918A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4414172A JPS5745061B2 (de) 1972-05-02 1972-05-02

Publications (1)

Publication Number Publication Date
CA980918A true CA980918A (en) 1975-12-30

Family

ID=12683347

Family Applications (1)

Application Number Title Priority Date Filing Date
CA170,129A Expired CA980918A (en) 1972-05-02 1973-05-01 Method of forming a nickel electrode on a silicon substrate

Country Status (6)

Country Link
JP (1) JPS5745061B2 (de)
CA (1) CA980918A (de)
DE (1) DE2321390C3 (de)
FR (1) FR2183111B1 (de)
GB (1) GB1379011A (de)
IT (1) IT988158B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS591667A (ja) * 1982-05-20 1984-01-07 ゼネラル・エレクトリツク・カンパニイ シリコンに対する白金の無電解めつき法
JPS60182010A (ja) * 1984-02-29 1985-09-17 Canon Electronics Inc ヘツド装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (de) * 1958-08-13 1900-01-01
NL134170C (de) * 1963-12-17 1900-01-01
DE1213921B (de) * 1964-08-25 1966-04-07 Bosch Gmbh Robert Verfahren zur Herstellung einer Halbleiteranordnung
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum

Also Published As

Publication number Publication date
DE2321390C3 (de) 1982-07-08
GB1379011A (en) 1975-01-02
FR2183111A1 (de) 1973-12-14
DE2321390A1 (de) 1973-11-15
JPS5745061B2 (de) 1982-09-25
JPS495575A (de) 1974-01-18
DE2321390B2 (de) 1976-10-28
IT988158B (it) 1975-04-10
FR2183111B1 (de) 1976-11-12

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