FR2183111A1 - - Google Patents

Info

Publication number
FR2183111A1
FR2183111A1 FR7315568A FR7315568A FR2183111A1 FR 2183111 A1 FR2183111 A1 FR 2183111A1 FR 7315568 A FR7315568 A FR 7315568A FR 7315568 A FR7315568 A FR 7315568A FR 2183111 A1 FR2183111 A1 FR 2183111A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7315568A
Other languages
French (fr)
Other versions
FR2183111B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2183111A1 publication Critical patent/FR2183111A1/fr
Application granted granted Critical
Publication of FR2183111B1 publication Critical patent/FR2183111B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
FR7315568A 1972-05-02 1973-04-27 Expired FR2183111B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4414172A JPS5745061B2 (de) 1972-05-02 1972-05-02

Publications (2)

Publication Number Publication Date
FR2183111A1 true FR2183111A1 (de) 1973-12-14
FR2183111B1 FR2183111B1 (de) 1976-11-12

Family

ID=12683347

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7315568A Expired FR2183111B1 (de) 1972-05-02 1973-04-27

Country Status (6)

Country Link
JP (1) JPS5745061B2 (de)
CA (1) CA980918A (de)
DE (1) DE2321390C3 (de)
FR (1) FR2183111B1 (de)
GB (1) GB1379011A (de)
IT (1) IT988158B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527225A1 (fr) * 1982-05-20 1983-11-25 Gen Electric Procede de depot auto-catalytique de platine sur du silicium

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182010A (ja) * 1984-02-29 1985-09-17 Canon Electronics Inc ヘツド装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (de) * 1958-08-13 1900-01-01
NL134170C (de) * 1963-12-17 1900-01-01
DE1213921B (de) * 1964-08-25 1966-04-07 Bosch Gmbh Robert Verfahren zur Herstellung einer Halbleiteranordnung
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527225A1 (fr) * 1982-05-20 1983-11-25 Gen Electric Procede de depot auto-catalytique de platine sur du silicium

Also Published As

Publication number Publication date
DE2321390A1 (de) 1973-11-15
DE2321390B2 (de) 1976-10-28
DE2321390C3 (de) 1982-07-08
GB1379011A (en) 1975-01-02
CA980918A (en) 1975-12-30
JPS495575A (de) 1974-01-18
JPS5745061B2 (de) 1982-09-25
IT988158B (it) 1975-04-10
FR2183111B1 (de) 1976-11-12

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