CA2879762C - Quantum well tunable short cavity laser - Google Patents
Quantum well tunable short cavity laser Download PDFInfo
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- CA2879762C CA2879762C CA2879762A CA2879762A CA2879762C CA 2879762 C CA2879762 C CA 2879762C CA 2879762 A CA2879762 A CA 2879762A CA 2879762 A CA2879762 A CA 2879762A CA 2879762 C CA2879762 C CA 2879762C
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- tunable laser
- quantum well
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- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/396—Type of laser source
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H01S5/0687—Stabilising the frequency of the laser
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
- H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
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- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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| PCT/US2013/052418 WO2014018945A1 (en) | 2012-07-27 | 2013-07-26 | Quantum well tunable short cavity laser |
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| CA2879762C true CA2879762C (en) | 2021-01-05 |
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| CA2878975A Active CA2878975C (en) | 2012-07-27 | 2013-07-26 | Amplified widely tunable short cavity laser |
| CA2879528A Active CA2879528C (en) | 2012-07-27 | 2013-07-26 | Mems-tunable short cavity laser |
| CA2880034A Active CA2880034C (en) | 2012-07-27 | 2013-07-26 | Tunable short cavity laser sensor |
| CA2879749A Active CA2879749C (en) | 2012-07-27 | 2013-07-26 | Polarization stable widely tunable short cavity laser |
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| CA2878975A Active CA2878975C (en) | 2012-07-27 | 2013-07-26 | Amplified widely tunable short cavity laser |
| CA2879528A Active CA2879528C (en) | 2012-07-27 | 2013-07-26 | Mems-tunable short cavity laser |
| CA2880034A Active CA2880034C (en) | 2012-07-27 | 2013-07-26 | Tunable short cavity laser sensor |
| CA2879749A Active CA2879749C (en) | 2012-07-27 | 2013-07-26 | Polarization stable widely tunable short cavity laser |
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