CA2879749C - Polarization stable widely tunable short cavity laser - Google Patents

Polarization stable widely tunable short cavity laser Download PDF

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Publication number
CA2879749C
CA2879749C CA2879749A CA2879749A CA2879749C CA 2879749 C CA2879749 C CA 2879749C CA 2879749 A CA2879749 A CA 2879749A CA 2879749 A CA2879749 A CA 2879749A CA 2879749 C CA2879749 C CA 2879749C
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Prior art keywords
tuning
wavelength
tunable
range
laser
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CA2879749A
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English (en)
French (fr)
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CA2879749A1 (en
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Alex Ezra Cable
Vijaysekhar Jayaraman
Benjamin Michael Potsaid
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Thorlabs Inc
Praevium Research Inc
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Thorlabs Inc
Praevium Research Inc
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    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
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    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10015—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by monitoring or controlling, e.g. attenuating, the input signal
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10061—Polarization control
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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    • H01S3/1396—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using two modes present, e.g. Zeeman splitting
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    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • G—PHYSICS
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/396—Type of laser source
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    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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  • Microscoopes, Condenser (AREA)
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  • Radiology & Medical Imaging (AREA)
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  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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CA2879749A 2012-07-27 2013-07-26 Polarization stable widely tunable short cavity laser Active CA2879749C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261676712P 2012-07-27 2012-07-27
US61/676,712 2012-07-27
PCT/US2013/052412 WO2014018940A1 (en) 2012-07-27 2013-07-26 Polarization stable widely tunable short cavity laser

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CA2879749A1 CA2879749A1 (en) 2014-01-30
CA2879749C true CA2879749C (en) 2020-12-08

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CA2879749A Active CA2879749C (en) 2012-07-27 2013-07-26 Polarization stable widely tunable short cavity laser
CA2878975A Active CA2878975C (en) 2012-07-27 2013-07-26 Amplified widely tunable short cavity laser
CA2879528A Active CA2879528C (en) 2012-07-27 2013-07-26 Mems-tunable short cavity laser
CA2880034A Active CA2880034C (en) 2012-07-27 2013-07-26 Tunable short cavity laser sensor
CA2879762A Active CA2879762C (en) 2012-07-27 2013-07-26 Quantum well tunable short cavity laser

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CA2878975A Active CA2878975C (en) 2012-07-27 2013-07-26 Amplified widely tunable short cavity laser
CA2879528A Active CA2879528C (en) 2012-07-27 2013-07-26 Mems-tunable short cavity laser
CA2880034A Active CA2880034C (en) 2012-07-27 2013-07-26 Tunable short cavity laser sensor
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CA2879528C (en) 2021-01-05
US20180254608A1 (en) 2018-09-06
WO2014018943A1 (en) 2014-01-30
US9843159B2 (en) 2017-12-12
US9397468B2 (en) 2016-07-19
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JP2015523736A (ja) 2015-08-13
CN111211487A (zh) 2020-05-29
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US9997891B2 (en) 2018-06-12
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