CA2805213A1 - Semiconductor memory asynchronous pipeline - Google Patents

Semiconductor memory asynchronous pipeline Download PDF

Info

Publication number
CA2805213A1
CA2805213A1 CA2805213A CA2805213A CA2805213A1 CA 2805213 A1 CA2805213 A1 CA 2805213A1 CA 2805213 A CA2805213 A CA 2805213A CA 2805213 A CA2805213 A CA 2805213A CA 2805213 A1 CA2805213 A1 CA 2805213A1
Authority
CA
Canada
Prior art keywords
data
system clock
pipeline stages
memory
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2805213A
Other languages
English (en)
French (fr)
Inventor
Ian Mes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Priority to CA2805213A priority Critical patent/CA2805213A1/en
Publication of CA2805213A1 publication Critical patent/CA2805213A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Dram (AREA)
CA2805213A 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline Abandoned CA2805213A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA2805213A CA2805213A1 (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA2805213A CA2805213A1 (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline
CA2233789A CA2233789C (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CA2233789A Division CA2233789C (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline

Publications (1)

Publication Number Publication Date
CA2805213A1 true CA2805213A1 (en) 1999-10-01

Family

ID=4162280

Family Applications (2)

Application Number Title Priority Date Filing Date
CA2805213A Abandoned CA2805213A1 (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline
CA2233789A Expired - Fee Related CA2233789C (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA2233789A Expired - Fee Related CA2233789C (en) 1998-04-01 1998-04-01 Semiconductor memory asynchronous pipeline

Country Status (4)

Country Link
US (1) US6539454B2 (enExample)
JP (2) JP5266271B2 (enExample)
KR (1) KR100623801B1 (enExample)
CA (2) CA2805213A1 (enExample)

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US6415374B1 (en) * 2000-03-16 2002-07-02 Mosel Vitelic, Inc. System and method for supporting sequential burst counts in double data rate (DDR) synchronous dynamic random access memories (SDRAM)
EP2056301B1 (en) * 2000-07-07 2011-11-30 Mosaid Technologies Incorporated A high speed dram architecture with uniform access latency
US6788593B2 (en) * 2001-02-28 2004-09-07 Rambus, Inc. Asynchronous, high-bandwidth memory component using calibrated timing elements
US6675272B2 (en) * 2001-04-24 2004-01-06 Rambus Inc. Method and apparatus for coordinating memory operations among diversely-located memory components
US8391039B2 (en) * 2001-04-24 2013-03-05 Rambus Inc. Memory module with termination component
DE10203893B4 (de) * 2002-01-31 2004-01-15 Infineon Technologies Ag DDR-Speicher und Speicherverfahren
US7484079B2 (en) * 2002-10-31 2009-01-27 Hewlett-Packard Development Company, L.P. Pipeline stage initialization via task frame accessed by a memory pointer propagated among the pipeline stages
KR100496817B1 (ko) * 2002-12-30 2005-06-23 주식회사 하이닉스반도체 데이터 정렬 시간을 최소화할 수 있는 반도체 기억 장치
KR100521759B1 (ko) * 2003-03-27 2005-10-17 학교법인 인하학원 모서리 감지 종료 회로 및 이를 이용한 고속의 비동기파이프라인 회로
US6963517B2 (en) * 2003-08-11 2005-11-08 Chao-Wu Chen Parallel asynchronous propagation pipeline structure to access multiple memory arrays
US7301831B2 (en) 2004-09-15 2007-11-27 Rambus Inc. Memory systems with variable delays for write data signals
KR100753081B1 (ko) * 2005-09-29 2007-08-31 주식회사 하이닉스반도체 내부 어드레스 생성장치를 구비하는 반도체메모리소자
US7515482B2 (en) * 2005-09-29 2009-04-07 Hynix Semiconductor Inc. Pipe latch device of semiconductor memory device
US7391656B2 (en) * 2006-07-25 2008-06-24 Etron Technology, Inc. Self-feedback control pipeline architecture for memory read path applications
US8873264B1 (en) 2012-08-24 2014-10-28 Cypress Semiconductor Corporation Data forwarding circuits and methods for memory devices with write latency
US8527802B1 (en) * 2012-08-24 2013-09-03 Cypress Semiconductor Corporation Memory device data latency circuits and methods
US8933739B1 (en) 2013-07-05 2015-01-13 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
KR102101390B1 (ko) * 2013-10-08 2020-04-17 에스케이하이닉스 주식회사 반도체 장치 및 이를 포함하는 반도체 시스템
US10699053B1 (en) * 2018-01-17 2020-06-30 Xilinx, Inc. Timing optimization of memory blocks in a programmable IC
BR112023012414A2 (pt) * 2021-04-28 2023-11-07 Yangtze Memory Tech Co Ltd Circuito, sistema, dispositivo de memória e método para operar um dispositivo de memória composto por um armazenamento temporário de página
US12189460B2 (en) * 2021-07-06 2025-01-07 UPBEAT TECHNOLOGY Co., Ltd Error detection and correction method and circuit

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JPH05144269A (ja) * 1991-11-19 1993-06-11 Fujitsu Ltd 半導体記憶装置
DE69331061T2 (de) * 1992-08-10 2002-06-06 Monolithic System Tech Inc Fehlertolerantes hierarchisiertes Bussystem
JPH06187787A (ja) * 1992-12-17 1994-07-08 Hitachi Ltd 半導体記憶装置とそのパイプライン動作制御方法
US5352945A (en) * 1993-03-18 1994-10-04 Micron Semiconductor, Inc. Voltage compensating delay element
JPH06290582A (ja) * 1993-04-02 1994-10-18 Nec Corp 半導体記憶装置
US5402388A (en) 1993-12-16 1995-03-28 Mosaid Technologies Incorporated Variable latency scheme for synchronous memory
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US5713005A (en) 1995-02-10 1998-01-27 Townsend And Townsend And Crew Llp Method and apparatus for pipelining data in an integrated circuit
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JPH08263985A (ja) 1995-03-24 1996-10-11 Nec Corp 半導体記憶装置
US5655105A (en) 1995-06-30 1997-08-05 Micron Technology, Inc. Method and apparatus for multiple latency synchronous pipelined dynamic random access memory
JPH0963262A (ja) * 1995-08-17 1997-03-07 Fujitsu Ltd シンクロナスｄｒａｍ
KR0164395B1 (ko) * 1995-09-11 1999-02-18 김광호 반도체 메모리 장치와 그 리이드 및 라이트 방법
JP2817679B2 (ja) 1995-09-20 1998-10-30 日本電気株式会社 半導体メモリ
EP0867068A1 (en) * 1995-12-15 1998-09-30 Unisys Corporation Delay circuit and memory using the same
US5784705A (en) * 1996-07-15 1998-07-21 Mosys, Incorporated Method and structure for performing pipeline burst accesses in a semiconductor memory
JP4070255B2 (ja) * 1996-08-13 2008-04-02 富士通株式会社 半導体集積回路
JPH10188556A (ja) * 1996-12-20 1998-07-21 Fujitsu Ltd 半導体記憶装置
JP3504104B2 (ja) * 1997-04-03 2004-03-08 富士通株式会社 シンクロナスｄｒａｍ
JPH11176158A (ja) * 1997-12-10 1999-07-02 Fujitsu Ltd ラッチ回路、データ出力回路及びこれを有する半導体装置

Also Published As

Publication number Publication date
KR100623801B1 (ko) 2006-09-12
JP2010176839A (ja) 2010-08-12
CA2233789C (en) 2013-06-11
CA2233789A1 (en) 1999-10-01
JP5266271B2 (ja) 2013-08-21
JP5580254B2 (ja) 2014-08-27
KR20010042316A (ko) 2001-05-25
JP2011222117A (ja) 2011-11-04
US6539454B2 (en) 2003-03-25
US20010042162A1 (en) 2001-11-15

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Effective date: 20130128

FZDE Dead

Effective date: 20161205