CA2780913A1 - Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof - Google Patents
Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof Download PDFInfo
- Publication number
- CA2780913A1 CA2780913A1 CA2780913A CA2780913A CA2780913A1 CA 2780913 A1 CA2780913 A1 CA 2780913A1 CA 2780913 A CA2780913 A CA 2780913A CA 2780913 A CA2780913 A CA 2780913A CA 2780913 A1 CA2780913 A1 CA 2780913A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- dopant
- photovoltaic cell
- substrate
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000002019 doping agent Substances 0.000 claims abstract description 167
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 103
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 238000007669 thermal treatment Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 8
- 238000000576 coating method Methods 0.000 description 38
- 239000011248 coating agent Substances 0.000 description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 21
- 229910052698 phosphorus Inorganic materials 0.000 description 21
- 239000011574 phosphorus Substances 0.000 description 21
- 125000004429 atom Chemical group 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000001965 increasing effect Effects 0.000 description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 13
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000003667 anti-reflective effect Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 229910052810 boron oxide Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010561 standard procedure Methods 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- -1 poly(ethyl-vinyl acetate) Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229940095054 ammoniac Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/591,391 US20110114147A1 (en) | 2009-11-18 | 2009-11-18 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| US12/591,391 | 2009-11-18 | ||
| US12/591,390 | 2009-11-18 | ||
| US12/591,390 US8586862B2 (en) | 2009-11-18 | 2009-11-18 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| PCT/IB2010/055221 WO2011061694A2 (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2780913A1 true CA2780913A1 (en) | 2011-05-26 |
Family
ID=44060135
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2780913A Abandoned CA2780913A1 (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| CA2781085A Abandoned CA2781085A1 (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2781085A Abandoned CA2781085A1 (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP2502278A2 (enExample) |
| JP (2) | JP2013511839A (enExample) |
| CN (2) | CN102754215A (enExample) |
| CA (2) | CA2780913A1 (enExample) |
| WO (2) | WO2011061694A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8586862B2 (en) | 2009-11-18 | 2013-11-19 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| US8796060B2 (en) | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| KR101627029B1 (ko) * | 2014-02-20 | 2016-06-03 | 제일모직주식회사 | Ibc 태양전지의 제조방법 |
| KR101627028B1 (ko) * | 2014-02-20 | 2016-06-03 | 제일모직주식회사 | 양면형 태양전지의 제조방법 |
| CN104051575B (zh) * | 2014-06-20 | 2016-08-17 | 润峰电力有限公司 | 一种仿生双面受光太阳能电池的制作工艺 |
| EP3365920B1 (en) | 2015-10-25 | 2023-02-22 | Solaround Ltd. | Method of bifacial cell fabrication |
| CN107340785B (zh) * | 2016-12-15 | 2021-05-18 | 江苏林洋新能源科技有限公司 | 一种基于智能化控制的双面光伏电池组件跟踪方法及控制器 |
| CH713453A1 (de) | 2017-02-13 | 2018-08-15 | Evatec Ag | Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche. |
| WO2019135214A1 (en) * | 2018-01-08 | 2019-07-11 | Solaround Ltd. | Bifacial photovoltaic cell and method of fabrication |
| CN113711367A (zh) * | 2019-01-30 | 2021-11-26 | 特古拉屋顶解决方案有限责任公司 | 光伏电池、封装光伏电池制造工艺、光伏瓦的电连接组件和光伏屋顶瓦 |
| CN113540269B (zh) * | 2021-09-14 | 2022-04-12 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
| CN119850580B (zh) * | 2025-01-03 | 2025-11-21 | 香港理工大学深圳研究院 | 一种接触网零部件检测方法、装置、终端及存储介质 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4322571A (en) * | 1980-07-17 | 1982-03-30 | The Boeing Company | Solar cells and methods for manufacture thereof |
| US4989059A (en) | 1988-05-13 | 1991-01-29 | Mobil Solar Energy Corporation | Solar cell with trench through pn junction |
| DE19522539C2 (de) * | 1995-06-21 | 1997-06-12 | Fraunhofer Ges Forschung | Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben |
| KR19990063990A (ko) * | 1995-10-05 | 1999-07-26 | 로시 리차드 | 부분적으로 깊게 확산된 에미터가 있는 자가조정식(salde) 태양 전지 및 그 제조 방법 |
| US5871591A (en) | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| US6552414B1 (en) | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| US6180869B1 (en) | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| RU2139601C1 (ru) | 1998-12-04 | 1999-10-10 | ООО Научно-производственная фирма "Кварк" | Способ изготовления солнечного элемента с n+-p-p+ структурой |
| TW419833B (en) | 1999-07-23 | 2001-01-21 | Ind Tech Res Inst | Manufacturing method of solar cell |
| KR100790956B1 (ko) * | 2000-10-06 | 2008-01-03 | 신에쯔 한도타이 가부시키가이샤 | 태양전지 및 그 제조방법 |
| JP4232597B2 (ja) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
| DE102004036220B4 (de) | 2004-07-26 | 2009-04-02 | Jürgen H. Werner | Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl |
| US20070113881A1 (en) * | 2005-11-22 | 2007-05-24 | Guardian Industries Corp. | Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product |
| JP5047186B2 (ja) * | 2006-09-27 | 2012-10-10 | 京セラ株式会社 | 太陽電池素子とその製造方法 |
| CN101179100A (zh) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | 一种大面积低弯曲超薄型双面照光太阳能电池制作方法 |
| DE102007036921A1 (de) | 2007-02-28 | 2008-09-04 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung von Siliziumsolarzellen |
| ES2382924T3 (es) * | 2007-07-18 | 2012-06-14 | Imec | Método para producir una estructura de emisor y estructuras de emisor que resultan del mismo |
| EP2259337A4 (en) * | 2008-03-27 | 2011-08-24 | Mitsubishi Electric Corp | PHOTOVOLTAIC POWER DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
| EP2278632A4 (en) * | 2008-04-30 | 2013-11-27 | Mitsubishi Electric Corp | PHOTOVOLTAIC ASSEMBLY AND METHOD FOR THE PRODUCTION THEREOF |
-
2010
- 2010-11-17 EP EP10793049A patent/EP2502278A2/en not_active Withdrawn
- 2010-11-17 EP EP10793317A patent/EP2502277A2/en not_active Withdrawn
- 2010-11-17 CA CA2780913A patent/CA2780913A1/en not_active Abandoned
- 2010-11-17 WO PCT/IB2010/055221 patent/WO2011061694A2/en not_active Ceased
- 2010-11-17 JP JP2012539462A patent/JP2013511839A/ja active Pending
- 2010-11-17 CA CA2781085A patent/CA2781085A1/en not_active Abandoned
- 2010-11-17 JP JP2012539461A patent/JP6027443B2/ja not_active Expired - Fee Related
- 2010-11-17 CN CN2010800616051A patent/CN102754215A/zh active Pending
- 2010-11-17 CN CN201080061602.8A patent/CN102725854B/zh not_active Expired - Fee Related
- 2010-11-17 WO PCT/IB2010/055219 patent/WO2011061693A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011061694A3 (en) | 2012-01-19 |
| WO2011061693A2 (en) | 2011-05-26 |
| WO2011061693A3 (en) | 2012-01-05 |
| WO2011061694A2 (en) | 2011-05-26 |
| CN102725854A (zh) | 2012-10-10 |
| CN102725854B (zh) | 2015-11-25 |
| JP2013511838A (ja) | 2013-04-04 |
| EP2502277A2 (en) | 2012-09-26 |
| CA2781085A1 (en) | 2011-05-26 |
| EP2502278A2 (en) | 2012-09-26 |
| CN102754215A (zh) | 2012-10-24 |
| JP6027443B2 (ja) | 2016-11-16 |
| JP2013511839A (ja) | 2013-04-04 |
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