CA2259631A1 - Floating gate memory cell with charge leakage prevention - Google Patents
Floating gate memory cell with charge leakage prevention Download PDFInfo
- Publication number
- CA2259631A1 CA2259631A1 CA002259631A CA2259631A CA2259631A1 CA 2259631 A1 CA2259631 A1 CA 2259631A1 CA 002259631 A CA002259631 A CA 002259631A CA 2259631 A CA2259631 A CA 2259631A CA 2259631 A1 CA2259631 A1 CA 2259631A1
- Authority
- CA
- Canada
- Prior art keywords
- floating gate
- oxide
- memory cell
- gate
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000007667 floating Methods 0.000 title claims abstract description 153
- 230000002265 prevention Effects 0.000 title description 3
- 230000002829 reductive effect Effects 0.000 claims abstract description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 108
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 108
- 125000006850 spacer group Chemical group 0.000 claims description 103
- 150000004767 nitrides Chemical class 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000005641 tunneling Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 58
- 230000008569 process Effects 0.000 abstract description 21
- 239000011253 protective coating Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 120
- 230000015572 biosynthetic process Effects 0.000 description 35
- 239000010936 titanium Substances 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 29
- 229910052719 titanium Inorganic materials 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000009467 reduction Effects 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 13
- 238000010276 construction Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229960005419 nitrogen Drugs 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 230000002028 premature Effects 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910008479 TiSi2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000013101 initial test Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 241000282461 Canis lupus Species 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- BALXUFOVQVENIU-KXNXZCPBSA-N pseudoephedrine hydrochloride Chemical compound [H+].[Cl-].CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 BALXUFOVQVENIU-KXNXZCPBSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 231100000488 structural defect Toxicity 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/46—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US85369197A | 1997-05-09 | 1997-05-09 | |
| US08/853,691 | 1997-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2259631A1 true CA2259631A1 (en) | 1998-11-12 |
Family
ID=25316673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002259631A Abandoned CA2259631A1 (en) | 1997-05-09 | 1998-04-30 | Floating gate memory cell with charge leakage prevention |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0934603A1 (ja) |
| JP (1) | JP2000513879A (ja) |
| KR (1) | KR20000023619A (ja) |
| CN (1) | CN1227001A (ja) |
| CA (1) | CA2259631A1 (ja) |
| NO (1) | NO990075L (ja) |
| WO (1) | WO1998050960A1 (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417046B1 (en) * | 2000-05-05 | 2002-07-09 | Taiwan Semiconductor Manufacturing Company | Modified nitride spacer for solving charge retention issue in floating gate memory cell |
| KR100395755B1 (ko) * | 2001-06-28 | 2003-08-21 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
| CN100382317C (zh) * | 2003-12-19 | 2008-04-16 | 应用智慧有限公司 | 间隙壁捕获型存储器 |
| KR100634167B1 (ko) | 2004-02-06 | 2006-10-16 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| KR100699830B1 (ko) * | 2004-12-16 | 2007-03-27 | 삼성전자주식회사 | 이레이즈 효율을 개선하는 비휘발성 메모리 소자 및 제조방법 |
| JP4974880B2 (ja) * | 2005-01-27 | 2012-07-11 | スパンション エルエルシー | 半導体装置及びその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5479018A (en) * | 1989-05-08 | 1995-12-26 | Westinghouse Electric Corp. | Back surface illuminated infrared detector |
| US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
-
1998
- 1998-04-30 EP EP98920031A patent/EP0934603A1/en not_active Withdrawn
- 1998-04-30 WO PCT/US1998/008709 patent/WO1998050960A1/en not_active Application Discontinuation
- 1998-04-30 CN CN98800616A patent/CN1227001A/zh active Pending
- 1998-04-30 CA CA002259631A patent/CA2259631A1/en not_active Abandoned
- 1998-04-30 JP JP10548205A patent/JP2000513879A/ja active Pending
-
1999
- 1999-01-08 NO NO990075A patent/NO990075L/no not_active Application Discontinuation
- 1999-01-08 KR KR1019997000068A patent/KR20000023619A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0934603A1 (en) | 1999-08-11 |
| CN1227001A (zh) | 1999-08-25 |
| WO1998050960A1 (en) | 1998-11-12 |
| JP2000513879A (ja) | 2000-10-17 |
| KR20000023619A (ko) | 2000-04-25 |
| NO990075D0 (no) | 1999-01-08 |
| NO990075L (no) | 1999-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |