CA2162596A1 - Ultrasonic enhancement of aluminum step coverage and apparatus - Google Patents
Ultrasonic enhancement of aluminum step coverage and apparatusInfo
- Publication number
- CA2162596A1 CA2162596A1 CA002162596A CA2162596A CA2162596A1 CA 2162596 A1 CA2162596 A1 CA 2162596A1 CA 002162596 A CA002162596 A CA 002162596A CA 2162596 A CA2162596 A CA 2162596A CA 2162596 A1 CA2162596 A1 CA 2162596A1
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor
- ultrasonic energy
- vias
- sputter
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101150067539 AMBP gene Proteins 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3327—Coating high aspect ratio workpieces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7943893A | 1993-06-17 | 1993-06-17 | |
| US079,438 | 1993-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2162596A1 true CA2162596A1 (en) | 1995-01-05 |
Family
ID=22150548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002162596A Abandoned CA2162596A1 (en) | 1993-06-17 | 1994-06-15 | Ultrasonic enhancement of aluminum step coverage and apparatus |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5520784A (en, 2012) |
| EP (1) | EP0707662A4 (en, 2012) |
| JP (1) | JPH08511656A (en, 2012) |
| KR (1) | KR960703179A (en, 2012) |
| AU (1) | AU7109694A (en, 2012) |
| CA (1) | CA2162596A1 (en, 2012) |
| TW (1) | TW239900B (en, 2012) |
| WO (1) | WO1995000676A1 (en, 2012) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5795399A (en) * | 1994-06-30 | 1998-08-18 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product |
| US5610103A (en) * | 1995-12-12 | 1997-03-11 | Applied Materials, Inc. | Ultrasonic wave assisted contact hole filling |
| US7253109B2 (en) * | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
| US20050272254A1 (en) * | 1997-11-26 | 2005-12-08 | Applied Materials, Inc. | Method of depositing low resistivity barrier layers for copper interconnects |
| JP4947834B2 (ja) | 1997-11-26 | 2012-06-06 | アプライド マテリアルズ インコーポレイテッド | ダメージフリー被覆刻設堆積法 |
| US6077404A (en) * | 1998-02-17 | 2000-06-20 | Applied Material, Inc. | Reflow chamber and process |
| US6159853A (en) * | 1999-08-04 | 2000-12-12 | Industrial Technology Research Institute | Method for using ultrasound for assisting forming conductive layers on semiconductor devices |
| US6361880B1 (en) | 1999-12-22 | 2002-03-26 | International Business Machines Corporation | CVD/PVD/CVD/PVD fill process |
| US6766813B1 (en) * | 2000-08-01 | 2004-07-27 | Board Of Regents, The University Of Texas System | Apparatus and method for cleaning a wafer |
| US6896774B2 (en) * | 2003-03-06 | 2005-05-24 | Intel Corporation | Acoustic streaming of condensate during sputtered metal vapor deposition |
| US20100209623A1 (en) * | 2009-02-18 | 2010-08-19 | Electronics And Telecommunications Research Institute | Apparatus for growing large area vanadium dioxide thin film and method of growing large area oxide thin film in the apparatus |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4388517A (en) * | 1980-09-22 | 1983-06-14 | Texas Instruments Incorporated | Sublimation patterning process |
| US4384918A (en) * | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| US4473455A (en) * | 1981-12-21 | 1984-09-25 | At&T Bell Laboratories | Wafer holding apparatus and method |
| US4521286A (en) * | 1983-03-09 | 1985-06-04 | Unisearch Limited | Hollow cathode sputter etcher |
| US4661228A (en) * | 1984-05-17 | 1987-04-28 | Varian Associates, Inc. | Apparatus and method for manufacturing planarized aluminum films |
| US4891112A (en) * | 1985-11-12 | 1990-01-02 | Eastman Kodak Company | Sputtering method for reducing hillocking in aluminum layers formed on substrates |
| JPH0697676B2 (ja) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | ウエハサセプタ装置 |
| US4721689A (en) * | 1986-08-28 | 1988-01-26 | International Business Machines Corporation | Method for simultaneously forming an interconnection level and via studs |
| US4791074A (en) * | 1986-08-29 | 1988-12-13 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor apparatus |
| JPS63153265A (ja) * | 1986-12-17 | 1988-06-25 | Nec Corp | スパツタ装置 |
| JP2602276B2 (ja) * | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
| DE3726731A1 (de) * | 1987-08-11 | 1989-02-23 | Hartec Ges Fuer Hartstoffe Und | Verfahren zum aufbringen von ueberzuegen auf gegenstaende mittels magnetfeldunterstuetzter kathodenzerstaeubung im vakuum |
| JPS6462461A (en) * | 1987-08-31 | 1989-03-08 | Hitachi Ltd | Sputtering device |
| US4970176A (en) * | 1989-09-29 | 1990-11-13 | Motorola, Inc. | Multiple step metallization process |
| US4994162A (en) * | 1989-09-29 | 1991-02-19 | Materials Research Corporation | Planarization method |
| US5057185A (en) * | 1990-09-27 | 1991-10-15 | Consortium For Surface Processing, Inc. | Triode plasma reactor with phase modulated plasma control |
| US5171412A (en) * | 1991-08-23 | 1992-12-15 | Applied Materials, Inc. | Material deposition method for integrated circuit manufacturing |
-
1994
- 1994-05-24 TW TW083104704A patent/TW239900B/zh active
- 1994-06-15 WO PCT/US1994/006792 patent/WO1995000676A1/en not_active Application Discontinuation
- 1994-06-15 EP EP94920227A patent/EP0707662A4/en not_active Withdrawn
- 1994-06-15 JP JP7502942A patent/JPH08511656A/ja active Pending
- 1994-06-15 CA CA002162596A patent/CA2162596A1/en not_active Abandoned
- 1994-06-15 KR KR1019950705653A patent/KR960703179A/ko not_active Withdrawn
- 1994-06-15 AU AU71096/94A patent/AU7109694A/en not_active Abandoned
-
1995
- 1995-05-31 US US08/455,636 patent/US5520784A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5520784A (en) | 1996-05-28 |
| TW239900B (en, 2012) | 1995-02-01 |
| AU7109694A (en) | 1995-01-17 |
| EP0707662A4 (en) | 1998-02-25 |
| WO1995000676A1 (en) | 1995-01-05 |
| EP0707662A1 (en) | 1996-04-24 |
| KR960703179A (ko) | 1996-06-19 |
| JPH08511656A (ja) | 1996-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |