CA2100492C - P-n junction devices with group iv element-doped group iii-v compound semiconductors - Google Patents

P-n junction devices with group iv element-doped group iii-v compound semiconductors

Info

Publication number
CA2100492C
CA2100492C CA002100492A CA2100492A CA2100492C CA 2100492 C CA2100492 C CA 2100492C CA 002100492 A CA002100492 A CA 002100492A CA 2100492 A CA2100492 A CA 2100492A CA 2100492 C CA2100492 C CA 2100492C
Authority
CA
Canada
Prior art keywords
junction device
dopant
period
layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002100492A
Other languages
English (en)
French (fr)
Other versions
CA2100492A1 (en
Inventor
Rose Fasano Kopf
Erdmann Frederick Schubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2100492A1 publication Critical patent/CA2100492A1/en
Application granted granted Critical
Publication of CA2100492C publication Critical patent/CA2100492C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA002100492A 1992-08-24 1993-07-14 P-n junction devices with group iv element-doped group iii-v compound semiconductors Expired - Fee Related CA2100492C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US934,840 1992-08-24
US07/934,840 US5268582A (en) 1992-08-24 1992-08-24 P-N junction devices with group IV element-doped group III-V compound semiconductors

Publications (2)

Publication Number Publication Date
CA2100492A1 CA2100492A1 (en) 1994-02-25
CA2100492C true CA2100492C (en) 1996-08-27

Family

ID=25466161

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002100492A Expired - Fee Related CA2100492C (en) 1992-08-24 1993-07-14 P-n junction devices with group iv element-doped group iii-v compound semiconductors

Country Status (7)

Country Link
US (1) US5268582A (en, 2012)
EP (1) EP0585003A3 (en, 2012)
JP (1) JPH06204499A (en, 2012)
KR (1) KR100270857B1 (en, 2012)
CA (1) CA2100492C (en, 2012)
SG (1) SG42926A1 (en, 2012)
TW (1) TW275700B (en, 2012)

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JP2781097B2 (ja) * 1992-01-30 1998-07-30 三菱電機株式会社 半導体装置およびその製造方法
US5594750A (en) * 1995-06-06 1997-01-14 Hughes Aircraft Company Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates
JP2718406B2 (ja) * 1995-12-19 1998-02-25 日本電気株式会社 電界効果トランジスタ
JP3763667B2 (ja) * 1998-04-23 2006-04-05 株式会社東芝 半導体発光素子
US6043143A (en) * 1998-05-04 2000-03-28 Motorola, Inc. Ohmic contact and method of manufacture
US6097041A (en) * 1998-08-24 2000-08-01 Kingmax Technology Inc. Light-emitting diode with anti-reflector
JP5011607B2 (ja) * 2001-04-16 2012-08-29 住友電気工業株式会社 受光素子
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
DE10317397A1 (de) * 2003-04-15 2004-11-04 Scheidt & Bachmann Gmbh Vorrichtung zur Annahme von Münzen
US7227174B2 (en) 2003-06-26 2007-06-05 Rj Mears, Llc Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
CA2581614A1 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US8080820B2 (en) * 2009-03-16 2011-12-20 Intel Corporation Apparatus and methods for improving parallel conduction in a quantum well device
CN103579326B (zh) * 2012-08-03 2016-12-21 电子科技大学 一种具有纵向复合缓冲层的氮化镓基高电子迁移率晶体管
WO2016105396A1 (en) * 2014-12-23 2016-06-30 Intel Corporation Diffusion tolerant iii-v semiconductor heterostructures and devices including the same
US10497814B2 (en) 2014-12-23 2019-12-03 Intel Corporation III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same
JP6702268B2 (ja) * 2017-06-15 2020-05-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
WO2019147602A1 (en) 2018-01-29 2019-08-01 Northwestern University Amphoteric p-type and n-type doping of group iii-vi semiconductors with group-iv atoms
US10411101B1 (en) 2018-07-30 2019-09-10 International Business Machines Corporation P-N junction based devices with single species impurity for P-type and N-type doping
DE102019003068A1 (de) * 2019-04-30 2020-11-05 3-5 Power Electronics GmbH Stapelförmige hochsperrende lnGaAS-Halbleiterleistungsdiode
CN114341408B (zh) * 2019-07-09 2024-10-29 集成太阳能私人有限公司 在(111)Si上生长的第III-V族材料的受控的n-掺杂的方法
JP7513484B2 (ja) * 2020-10-09 2024-07-09 株式会社デンソー 半導体装置

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US4675709A (en) * 1982-06-21 1987-06-23 Xerox Corporation Quantized layered structures with adjusted indirect bandgap transitions
EP0133342B1 (en) * 1983-06-24 1989-11-29 Nec Corporation A superlattice type semiconductor structure having a high carrier density
JPS6453570A (en) * 1987-08-25 1989-03-01 Mitsubishi Electric Corp Superlattice device
JPH01171269A (ja) * 1987-12-26 1989-07-06 Fujitsu Ltd 半導体装置
GB2223351A (en) * 1988-09-28 1990-04-04 Philips Electronic Associated A method of manufacturing a semiconductor device having waveguide structure
JP2646799B2 (ja) * 1989-12-21 1997-08-27 日本電気株式会社 半導体多層膜
JPH045817A (ja) * 1990-04-23 1992-01-09 Hitachi Ltd エピタキシャル成長層、その成長法、半導体装置及び高抵抗領域の製造方法
EP0565054A3 (en) * 1992-04-09 1994-07-27 Hughes Aircraft Co N-type antimony-based strained layer superlattice and fabrication method

Also Published As

Publication number Publication date
EP0585003A2 (en) 1994-03-02
SG42926A1 (en) 1997-10-17
KR940004903A (ko) 1994-03-16
US5268582A (en) 1993-12-07
KR100270857B1 (ko) 2000-12-01
EP0585003A3 (en) 1996-01-31
TW275700B (en, 2012) 1996-05-11
CA2100492A1 (en) 1994-02-25
JPH06204499A (ja) 1994-07-22

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