TW275700B - - Google Patents
Info
- Publication number
- TW275700B TW275700B TW081108328A TW81108328A TW275700B TW 275700 B TW275700 B TW 275700B TW 081108328 A TW081108328 A TW 081108328A TW 81108328 A TW81108328 A TW 81108328A TW 275700 B TW275700 B TW 275700B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/934,840 US5268582A (en) | 1992-08-24 | 1992-08-24 | P-N junction devices with group IV element-doped group III-V compound semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
TW275700B true TW275700B (zh) | 1996-05-11 |
Family
ID=25466161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW081108328A TW275700B (zh) | 1992-08-24 | 1992-10-20 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5268582A (zh) |
EP (1) | EP0585003A3 (zh) |
JP (1) | JPH06204499A (zh) |
KR (1) | KR100270857B1 (zh) |
CA (1) | CA2100492C (zh) |
SG (1) | SG42926A1 (zh) |
TW (1) | TW275700B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107430989A (zh) * | 2014-12-23 | 2017-12-01 | 英特尔公司 | 耐受扩散的iii‑v族半导体异质结构及包括其的器件 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2781097B2 (ja) * | 1992-01-30 | 1998-07-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5594750A (en) * | 1995-06-06 | 1997-01-14 | Hughes Aircraft Company | Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates |
JP2718406B2 (ja) * | 1995-12-19 | 1998-02-25 | 日本電気株式会社 | 電界効果トランジスタ |
JP3763667B2 (ja) * | 1998-04-23 | 2006-04-05 | 株式会社東芝 | 半導体発光素子 |
US6043143A (en) * | 1998-05-04 | 2000-03-28 | Motorola, Inc. | Ohmic contact and method of manufacture |
US6097041A (en) * | 1998-08-24 | 2000-08-01 | Kingmax Technology Inc. | Light-emitting diode with anti-reflector |
JP5011607B2 (ja) * | 2001-04-16 | 2012-08-29 | 住友電気工業株式会社 | 受光素子 |
US7295586B2 (en) * | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
DE10317397A1 (de) * | 2003-04-15 | 2004-11-04 | Scheidt & Bachmann Gmbh | Vorrichtung zur Annahme von Münzen |
US7227174B2 (en) | 2003-06-26 | 2007-06-05 | Rj Mears, Llc | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
CN101432936B (zh) * | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
US8080820B2 (en) * | 2009-03-16 | 2011-12-20 | Intel Corporation | Apparatus and methods for improving parallel conduction in a quantum well device |
CN103579326B (zh) * | 2012-08-03 | 2016-12-21 | 电子科技大学 | 一种具有纵向复合缓冲层的氮化镓基高电子迁移率晶体管 |
WO2016105397A1 (en) | 2014-12-23 | 2016-06-30 | Intel Corporation | Iii-v semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same |
JP6702268B2 (ja) * | 2017-06-15 | 2020-05-27 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
WO2019147602A1 (en) | 2018-01-29 | 2019-08-01 | Northwestern University | Amphoteric p-type and n-type doping of group iii-vi semiconductors with group-iv atoms |
US10411101B1 (en) | 2018-07-30 | 2019-09-10 | International Business Machines Corporation | P-N junction based devices with single species impurity for P-type and N-type doping |
DE102019003068A1 (de) * | 2019-04-30 | 2020-11-05 | 3-5 Power Electronics GmbH | Stapelförmige hochsperrende lnGaAS-Halbleiterleistungsdiode |
KR20220035402A (ko) * | 2019-07-09 | 2022-03-22 | 인티그레이티드 솔라 | (111) SI 상에서 성장된 III-V 족 재료의 제어된 n-도핑 방법 |
JP7513484B2 (ja) * | 2020-10-09 | 2024-07-09 | 株式会社デンソー | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4675709A (en) * | 1982-06-21 | 1987-06-23 | Xerox Corporation | Quantized layered structures with adjusted indirect bandgap transitions |
EP0133342B1 (en) * | 1983-06-24 | 1989-11-29 | Nec Corporation | A superlattice type semiconductor structure having a high carrier density |
JPS6453570A (en) * | 1987-08-25 | 1989-03-01 | Mitsubishi Electric Corp | Superlattice device |
JPH01171269A (ja) * | 1987-12-26 | 1989-07-06 | Fujitsu Ltd | 半導体装置 |
GB2223351A (en) * | 1988-09-28 | 1990-04-04 | Philips Electronic Associated | A method of manufacturing a semiconductor device having waveguide structure |
JP2646799B2 (ja) * | 1989-12-21 | 1997-08-27 | 日本電気株式会社 | 半導体多層膜 |
JPH045817A (ja) * | 1990-04-23 | 1992-01-09 | Hitachi Ltd | エピタキシャル成長層、その成長法、半導体装置及び高抵抗領域の製造方法 |
EP0565054A3 (en) * | 1992-04-09 | 1994-07-27 | Hughes Aircraft Co | N-type antimony-based strained layer superlattice and fabrication method |
-
1992
- 1992-08-24 US US07/934,840 patent/US5268582A/en not_active Expired - Lifetime
- 1992-10-20 TW TW081108328A patent/TW275700B/zh not_active IP Right Cessation
-
1993
- 1993-07-14 CA CA002100492A patent/CA2100492C/en not_active Expired - Fee Related
- 1993-07-31 KR KR1019930014815A patent/KR100270857B1/ko not_active IP Right Cessation
- 1993-08-11 EP EP93306352A patent/EP0585003A3/en not_active Ceased
- 1993-08-11 SG SG1996000878A patent/SG42926A1/en unknown
- 1993-08-24 JP JP5208123A patent/JPH06204499A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107430989A (zh) * | 2014-12-23 | 2017-12-01 | 英特尔公司 | 耐受扩散的iii‑v族半导体异质结构及包括其的器件 |
CN107430989B (zh) * | 2014-12-23 | 2021-03-12 | 英特尔公司 | 耐受扩散的iii-v族半导体异质结构及包括其的器件 |
Also Published As
Publication number | Publication date |
---|---|
SG42926A1 (en) | 1997-10-17 |
EP0585003A2 (en) | 1994-03-02 |
US5268582A (en) | 1993-12-07 |
KR940004903A (ko) | 1994-03-16 |
EP0585003A3 (en) | 1996-01-31 |
JPH06204499A (ja) | 1994-07-22 |
KR100270857B1 (ko) | 2000-12-01 |
CA2100492A1 (en) | 1994-02-25 |
CA2100492C (en) | 1996-08-27 |
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |