CA1244966A - Schottky-gate field effect transistor with trapezoidal gate - Google Patents

Schottky-gate field effect transistor with trapezoidal gate

Info

Publication number
CA1244966A
CA1244966A CA000505246A CA505246A CA1244966A CA 1244966 A CA1244966 A CA 1244966A CA 000505246 A CA000505246 A CA 000505246A CA 505246 A CA505246 A CA 505246A CA 1244966 A CA1244966 A CA 1244966A
Authority
CA
Canada
Prior art keywords
schottky
substrate
gate
electrode
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000505246A
Other languages
English (en)
French (fr)
Inventor
Toshiki Ebata
Shigeru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of CA1244966A publication Critical patent/CA1244966A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H10D64/0125—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
CA000505246A 1985-03-26 1986-03-26 Schottky-gate field effect transistor with trapezoidal gate Expired CA1244966A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60063096A JPS61220376A (ja) 1985-03-26 1985-03-26 ショットキゲート電界効果トランジスタの製造方法
JP63096/1985 1985-03-26

Publications (1)

Publication Number Publication Date
CA1244966A true CA1244966A (en) 1988-11-15

Family

ID=13219425

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000505246A Expired CA1244966A (en) 1985-03-26 1986-03-26 Schottky-gate field effect transistor with trapezoidal gate

Country Status (4)

Country Link
US (1) US4774200A (Direct)
EP (1) EP0196087A3 (Direct)
JP (1) JPS61220376A (Direct)
CA (1) CA1244966A (Direct)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2613134B1 (fr) * 1987-03-24 1990-03-09 Labo Electronique Physique Dispositif semiconducteur du type transistor a effet de champ
US4808545A (en) * 1987-04-20 1989-02-28 International Business Machines Corporation High speed GaAs MESFET having refractory contacts and a self-aligned cold gate fabrication process
JPH022142A (ja) * 1988-06-13 1990-01-08 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
JP2562840B2 (ja) * 1988-08-01 1996-12-11 富士通株式会社 電界効果トランジスタ
US4963501A (en) * 1989-09-25 1990-10-16 Rockwell International Corporation Method of fabricating semiconductor devices with sub-micron linewidths
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
US5011785A (en) * 1990-10-30 1991-04-30 The United States Of America As Represented By The Secretary Of The Navy Insulator assisted self-aligned gate junction
US5907177A (en) * 1995-03-14 1999-05-25 Matsushita Electric Industrial Co.,Ltd. Semiconductor device having a tapered gate electrode
US5652179A (en) * 1996-04-24 1997-07-29 Watkins-Johnson Company Method of fabricating sub-micron gate electrode by angle and direct evaporation
CN103137449B (zh) * 2011-12-01 2016-04-20 中芯国际集成电路制造(上海)有限公司 栅极的制作方法、晶体管的制作方法
US8629559B2 (en) 2012-02-09 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stress reduction apparatus with an inverted cup-shaped layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
JPS588151B2 (ja) * 1976-09-30 1983-02-14 松下電器産業株式会社 接合型電界効果トランジスタの製造方法
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
JPS5667974A (en) * 1979-10-26 1981-06-08 Ibm Method of manufacturing semiconductor device
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
US4309267A (en) * 1980-07-21 1982-01-05 Bell Telephone Laboratories, Incorporated Reactive sputter etching apparatus
JPS5773975A (en) * 1980-10-27 1982-05-08 Toshiba Corp Mis type field effect transistor and manufacture thereof
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET
JPS57128071A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect type semiconductor device and manufacture thereof
JPS57180184A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Manufacturing method for fet
IT1171402B (it) * 1981-07-20 1987-06-10 Selenia Ind Eletroniche Associ Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata
US4404732A (en) * 1981-12-07 1983-09-20 Ibm Corporation Self-aligned extended epitaxy mesfet fabrication process
JPS58178567A (ja) * 1982-04-14 1983-10-19 Toshiba Corp 半導体装置およびその製造方法
US4640003A (en) * 1985-09-30 1987-02-03 The United States Of America As Represented By The Secretary Of The Navy Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment

Also Published As

Publication number Publication date
EP0196087A2 (en) 1986-10-01
US4774200A (en) 1988-09-27
JPS61220376A (ja) 1986-09-30
EP0196087A3 (en) 1986-12-17
JPH0329301B2 (Direct) 1991-04-23

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Legal Events

Date Code Title Description
MKEX Expiry