CA1212485A - Integrated semiconductor circuits with bipolar components and method of producing same - Google Patents
Integrated semiconductor circuits with bipolar components and method of producing sameInfo
- Publication number
- CA1212485A CA1212485A CA000434348A CA434348A CA1212485A CA 1212485 A CA1212485 A CA 1212485A CA 000434348 A CA000434348 A CA 000434348A CA 434348 A CA434348 A CA 434348A CA 1212485 A CA1212485 A CA 1212485A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- bipolar transistor
- silicide
- contact
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 13
- 238000002513 implantation Methods 0.000 claims abstract description 11
- 238000001465 metallisation Methods 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims abstract description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- -1 arsenic ions Chemical class 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 3
- 230000003213 activating effect Effects 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- QIRIKWOTEXYIJD-UHFFFAOYSA-N molybdenum tantalum tungsten Chemical compound [Ta][Mo][W] QIRIKWOTEXYIJD-UHFFFAOYSA-N 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 241000282320 Panthera leo Species 0.000 description 2
- 108700028369 Alleles Proteins 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP3230050.6 | 1982-08-12 | ||
| DE19823230050 DE3230050A1 (de) | 1982-08-12 | 1982-08-12 | Integrierte halbleiterschaltung mit bipolaren bauelementen und verfahren zur herstellung derselben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1212485A true CA1212485A (en) | 1986-10-07 |
Family
ID=6170719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000434348A Expired CA1212485A (en) | 1982-08-12 | 1983-08-11 | Integrated semiconductor circuits with bipolar components and method of producing same |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0100999B1 (enrdf_load_stackoverflow) |
| JP (1) | JPS5948958A (enrdf_load_stackoverflow) |
| CA (1) | CA1212485A (enrdf_load_stackoverflow) |
| DE (2) | DE3230050A1 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01319974A (ja) * | 1988-06-20 | 1989-12-26 | Nec Corp | 半導体装置 |
| EP0574097B1 (en) * | 1989-03-14 | 1998-12-16 | Kabushiki Kaisha Toshiba | Semiconductor device having multilayer wiring and the method of making it |
| JPH0582772A (ja) * | 1991-09-20 | 1993-04-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| DE102007011406B4 (de) * | 2007-03-08 | 2009-10-22 | Austriamicrosystems Ag | Verfahren zur Herstellung einer Schottky-Diode und Halbleiterbauelement mit Schottky-Diode |
| CN113066723B (zh) * | 2021-03-19 | 2022-06-07 | 厦门市三安集成电路有限公司 | 异质结双极型晶体管及其制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2624409C2 (de) * | 1976-05-31 | 1987-02-12 | Siemens AG, 1000 Berlin und 8000 München | Schottky-Transistor-Logik-Anordnung |
| DE2624339C2 (de) * | 1976-05-31 | 1986-09-11 | Siemens AG, 1000 Berlin und 8000 München | Schottky-Transistorlogik |
| US4215156A (en) * | 1977-08-26 | 1980-07-29 | International Business Machines Corporation | Method for fabricating tantalum semiconductor contacts |
| US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
| JPS55125666A (en) * | 1979-03-23 | 1980-09-27 | Nec Corp | Semiconductor device |
| IL61678A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
| JPS56137655A (en) * | 1980-03-29 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS582065A (ja) * | 1981-06-25 | 1983-01-07 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58169971A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 半導体装置およびその製造方法 |
-
1982
- 1982-08-12 DE DE19823230050 patent/DE3230050A1/de not_active Withdrawn
-
1983
- 1983-08-02 DE DE8383107620T patent/DE3379564D1/de not_active Expired
- 1983-08-02 EP EP83107620A patent/EP0100999B1/de not_active Expired
- 1983-08-10 JP JP58146262A patent/JPS5948958A/ja active Granted
- 1983-08-11 CA CA000434348A patent/CA1212485A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3379564D1 (en) | 1989-05-11 |
| EP0100999B1 (de) | 1989-04-05 |
| DE3230050A1 (de) | 1984-02-16 |
| JPS5948958A (ja) | 1984-03-21 |
| JPH0241902B2 (enrdf_load_stackoverflow) | 1990-09-19 |
| EP0100999A2 (de) | 1984-02-22 |
| EP0100999A3 (en) | 1986-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |