CA1161968A - Circuit protecteur pour dispositifs a circuits integres - Google Patents
Circuit protecteur pour dispositifs a circuits integresInfo
- Publication number
- CA1161968A CA1161968A CA000391274A CA391274A CA1161968A CA 1161968 A CA1161968 A CA 1161968A CA 000391274 A CA000391274 A CA 000391274A CA 391274 A CA391274 A CA 391274A CA 1161968 A CA1161968 A CA 1161968A
- Authority
- CA
- Canada
- Prior art keywords
- region
- layer
- protection circuit
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004224 protection Effects 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- BALXUFOVQVENIU-KXNXZCPBSA-N pseudoephedrine hydrochloride Chemical compound [H+].[Cl-].CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 BALXUFOVQVENIU-KXNXZCPBSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21253480A | 1980-12-03 | 1980-12-03 | |
| US212,534 | 1980-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1161968A true CA1161968A (fr) | 1984-02-07 |
Family
ID=22791421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000391274A Expired CA1161968A (fr) | 1980-12-03 | 1981-12-01 | Circuit protecteur pour dispositifs a circuits integres |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6048906B2 (fr) |
| CA (1) | CA1161968A (fr) |
| DE (1) | DE3147505A1 (fr) |
| FR (1) | FR2495378A1 (fr) |
| GB (1) | GB2088634B (fr) |
| IT (1) | IT1139888B (fr) |
| MY (1) | MY8500877A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4484244A (en) * | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
| IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
| JPS62295448A (ja) * | 1986-04-11 | 1987-12-22 | テキサス インスツルメンツ インコ−ポレイテツド | 静電気に対する保護装置を備えた集積回路 |
| US9281682B2 (en) * | 2013-03-12 | 2016-03-08 | Micron Technology, Inc. | Apparatuses and method for over-voltage event protection |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3940785A (en) * | 1974-05-06 | 1976-02-24 | Sprague Electric Company | Semiconductor I.C. with protection against reversed power supply |
| JPS55113358A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device |
-
1981
- 1981-11-26 GB GB8135659A patent/GB2088634B/en not_active Expired
- 1981-12-01 DE DE19813147505 patent/DE3147505A1/de active Granted
- 1981-12-01 IT IT25385/81A patent/IT1139888B/it active
- 1981-12-01 CA CA000391274A patent/CA1161968A/fr not_active Expired
- 1981-12-02 FR FR8122584A patent/FR2495378A1/fr active Granted
- 1981-12-02 JP JP56195101A patent/JPS6048906B2/ja not_active Expired
-
1985
- 1985-12-30 MY MY877/85A patent/MY8500877A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2088634A (en) | 1982-06-09 |
| JPS57120366A (en) | 1982-07-27 |
| DE3147505C2 (fr) | 1991-02-28 |
| FR2495378B1 (fr) | 1984-01-13 |
| IT8125385A0 (it) | 1981-12-01 |
| DE3147505A1 (de) | 1982-10-21 |
| GB2088634B (en) | 1984-08-15 |
| MY8500877A (en) | 1985-12-31 |
| JPS6048906B2 (ja) | 1985-10-30 |
| FR2495378A1 (fr) | 1982-06-04 |
| IT1139888B (it) | 1986-09-24 |
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| JPH0237112B2 (fr) | ||
| CA1132720A (fr) | Resistance biborne a effet de champ | |
| JPS62165978A (ja) | 保護ダイオ−ド | |
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| KR100232226B1 (ko) | 이에스디 보호회로 | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |