CA1134055A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- CA1134055A CA1134055A CA332,190A CA332190A CA1134055A CA 1134055 A CA1134055 A CA 1134055A CA 332190 A CA332190 A CA 332190A CA 1134055 A CA1134055 A CA 1134055A
- Authority
- CA
- Canada
- Prior art keywords
- region
- junction
- semiconductor device
- zone
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 230000015556 catabolic process Effects 0.000 claims abstract description 40
- 230000005669 field effect Effects 0.000 claims abstract description 13
- 230000002441 reversible effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000002800 charge carrier Substances 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 21
- 238000009826 distribution Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229920000136 polysorbate Polymers 0.000 description 6
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 5
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 4
- 239000005630 Diquat Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101100234604 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) ace-8 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000002674 ointment Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100379067 Caenorhabditis elegans anc-1 gene Proteins 0.000 description 1
- 241000905957 Channa melasoma Species 0.000 description 1
- 241000736839 Chara Species 0.000 description 1
- 241000518994 Conta Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100496105 Mus musculus Clec2e gene Proteins 0.000 description 1
- 101100202275 Mus musculus Slc22a8 gene Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 102000017795 Perilipin-1 Human genes 0.000 description 1
- 108010067162 Perilipin-1 Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000428533 Rhis Species 0.000 description 1
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 101150010487 are gene Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- PBAYDYUZOSNJGU-UHFFFAOYSA-N chelidonic acid Natural products OC(=O)C1=CC(=O)C=C(C(O)=O)O1 PBAYDYUZOSNJGU-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- WRUUGTRCQOWXEG-UHFFFAOYSA-N pamidronate Chemical compound NCCC(O)(P(O)(O)=O)P(O)(O)=O WRUUGTRCQOWXEG-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
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- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7807835,A NL184552C (nl) | 1978-07-24 | 1978-07-24 | Halfgeleiderinrichting voor hoge spanningen. |
NL7807835 | 1978-07-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1134055A true CA1134055A (en) | 1982-10-19 |
Family
ID=19831291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA332,190A Expired CA1134055A (en) | 1978-07-24 | 1979-07-19 | Semiconductor device |
Country Status (15)
Country | Link |
---|---|
JP (1) | JPS5924550B2 (xx) |
AT (1) | AT382042B (xx) |
AU (1) | AU521670B2 (xx) |
BE (1) | BE877850A (xx) |
BR (1) | BR7904692A (xx) |
CA (1) | CA1134055A (xx) |
CH (1) | CH648693A5 (xx) |
DE (2) | DE2954286C2 (xx) |
ES (1) | ES482691A1 (xx) |
FR (1) | FR2434487A1 (xx) |
GB (1) | GB2026240B (xx) |
IT (1) | IT1122226B (xx) |
NL (1) | NL184552C (xx) |
PL (2) | PL119597B1 (xx) |
SE (1) | SE437094B (xx) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
GB2133621B (en) * | 1983-01-11 | 1987-02-04 | Emi Ltd | Junction field effect transistor |
NL8304256A (nl) * | 1983-12-09 | 1985-07-01 | Philips Nv | Halfgeleiderinrichting. |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL161621C (nl) * | 1968-10-16 | 1980-02-15 | Philips Nv | Halfgeleiderinrichting met veldeffecttransistor. |
JPS4932028B1 (xx) * | 1969-06-24 | 1974-08-27 | ||
US3814992A (en) * | 1972-06-22 | 1974-06-04 | Ibm | High performance fet |
US4037245A (en) | 1975-11-28 | 1977-07-19 | General Electric Company | Electric field controlled diode with a current controlling surface grid |
-
1978
- 1978-07-24 NL NLAANVRAGE7807835,A patent/NL184552C/xx not_active IP Right Cessation
-
1979
- 1979-07-09 DE DE2954286A patent/DE2954286C2/de not_active Expired
- 1979-07-09 DE DE2927662A patent/DE2927662C2/de not_active Expired
- 1979-07-19 CA CA332,190A patent/CA1134055A/en not_active Expired
- 1979-07-19 AU AU49061/79A patent/AU521670B2/en not_active Ceased
- 1979-07-20 PL PL1979217279D patent/PL119597B1/pl unknown
- 1979-07-20 GB GB7925316A patent/GB2026240B/en not_active Expired
- 1979-07-20 CH CH6783/79A patent/CH648693A5/de not_active IP Right Cessation
- 1979-07-20 ES ES482691A patent/ES482691A1/es not_active Expired
- 1979-07-20 PL PL21727979A patent/PL217279A1/xx unknown
- 1979-07-20 IT IT24514/79A patent/IT1122226B/it active
- 1979-07-21 JP JP54092147A patent/JPS5924550B2/ja not_active Expired
- 1979-07-23 FR FR7918941A patent/FR2434487A1/fr active Granted
- 1979-07-23 BR BR7904692A patent/BR7904692A/pt unknown
- 1979-07-23 BE BE0/196422A patent/BE877850A/fr not_active IP Right Cessation
- 1979-07-23 SE SE7906289A patent/SE437094B/sv not_active IP Right Cessation
- 1979-07-24 AT AT0509379A patent/AT382042B/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU4906179A (en) | 1980-01-31 |
ATA509379A (de) | 1986-05-15 |
AT382042B (de) | 1986-12-29 |
GB2026240A (en) | 1980-01-30 |
FR2434487A1 (fr) | 1980-03-21 |
DE2954286C2 (de) | 1986-04-17 |
BR7904692A (pt) | 1980-04-15 |
PL217279A1 (xx) | 1980-08-11 |
BE877850A (fr) | 1980-01-23 |
FR2434487B1 (xx) | 1984-06-29 |
GB2026240B (en) | 1982-12-01 |
SE7906289L (sv) | 1980-01-25 |
DE2927662A1 (de) | 1980-02-07 |
JPS5924550B2 (ja) | 1984-06-09 |
IT7924514A0 (it) | 1979-07-20 |
NL7807835A (nl) | 1980-01-28 |
NL184552C (nl) | 1989-08-16 |
AU521670B2 (en) | 1982-04-22 |
NL184552B (nl) | 1989-03-16 |
CH648693A5 (de) | 1985-03-29 |
ES482691A1 (es) | 1980-03-01 |
SE437094B (sv) | 1985-02-04 |
PL119597B1 (en) | 1982-01-30 |
DE2927662C2 (de) | 1984-01-12 |
IT1122226B (it) | 1986-04-23 |
JPS5518098A (en) | 1980-02-07 |
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