CA1123525A - High temperature amorphous semiconductor member and method of making same - Google Patents

High temperature amorphous semiconductor member and method of making same

Info

Publication number
CA1123525A
CA1123525A CA311,648A CA311648A CA1123525A CA 1123525 A CA1123525 A CA 1123525A CA 311648 A CA311648 A CA 311648A CA 1123525 A CA1123525 A CA 1123525A
Authority
CA
Canada
Prior art keywords
amorphous
host matrix
semiconductor member
amorphous semiconductor
modifier material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA311,648A
Other languages
English (en)
French (fr)
Inventor
Stanford R. Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/841,369 external-priority patent/US4177474A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of CA1123525A publication Critical patent/CA1123525A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
CA311,648A 1977-10-12 1978-09-20 High temperature amorphous semiconductor member and method of making same Expired CA1123525A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US841,369 1977-10-12
US05/841,369 US4177474A (en) 1977-05-18 1977-10-12 High temperature amorphous semiconductor member and method of making the same

Publications (1)

Publication Number Publication Date
CA1123525A true CA1123525A (en) 1982-05-11

Family

ID=25284694

Family Applications (1)

Application Number Title Priority Date Filing Date
CA311,648A Expired CA1123525A (en) 1977-10-12 1978-09-20 High temperature amorphous semiconductor member and method of making same

Country Status (7)

Country Link
JP (1) JPS5464981A (enExample)
AU (1) AU523107B2 (enExample)
CA (1) CA1123525A (enExample)
DE (1) DE2844070A1 (enExample)
ES (1) ES474153A1 (enExample)
FR (1) FR2454186A1 (enExample)
GB (1) GB2007021B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
IE52207B1 (en) * 1980-09-09 1987-08-05 Energy Conversion Devices Inc Method of grading the band gaps of amorphous alloys and devices
CA1176740A (en) * 1980-12-03 1984-10-23 Yoshihisa Tawada High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
DE3280418T2 (de) * 1981-07-17 1993-03-04 Kanegafuchi Chemical Ind Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
EP0072221B1 (en) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Non-volatile electrically programmable memory device
JPS62162366A (ja) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPH07105507B2 (ja) * 1982-02-25 1995-11-13 プラズマ・フィジクス・コ−ポレ−ション 光起電力装置
DE3314197A1 (de) * 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
JPS5957407A (ja) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd 光起電力装置
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
JPS58180074A (ja) * 1983-03-28 1983-10-21 Shunpei Yamazaki 光電変換半導体装置
ES8602301A1 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS6316678A (ja) * 1986-12-26 1988-01-23 Shunpei Yamazaki 光電変換装置
JP2648733B2 (ja) * 1993-11-18 1997-09-03 プラズマ・フィジクス・コーポレーション 半導体装置
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
TWI245288B (en) * 2003-03-20 2005-12-11 Sony Corp Semiconductor memory element and semiconductor memory device using the same
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Also Published As

Publication number Publication date
GB2007021A (en) 1979-05-10
FR2454186B1 (enExample) 1984-08-24
ES474153A1 (es) 1979-10-16
GB2007021B (en) 1982-05-06
AU523107B2 (en) 1982-07-15
DE2844070C2 (enExample) 1990-02-01
DE2844070A1 (de) 1979-04-26
JPS6230512B2 (enExample) 1987-07-02
JPS5464981A (en) 1979-05-25
FR2454186A1 (fr) 1980-11-07
AU4023778A (en) 1980-04-03

Similar Documents

Publication Publication Date Title
US4177474A (en) High temperature amorphous semiconductor member and method of making the same
CA1102925A (en) Amorphous semiconductor member and method of making same
US4152535A (en) Continuous process for fabricating solar cells and the product produced thereby
US4159354A (en) Method for making thin film III-V compound semiconductors for solar cells involving the use of a molten intermediate layer
US4897710A (en) Semiconductor device
US4155785A (en) Process of making a radiation responsive device
US4001864A (en) Semiconductor p-n junction solar cell and method of manufacture
CA1148669A (en) Gradient doping in amorphous silicon
US6130380A (en) Solar cell and fabrication method thereof
CA1068805A (en) Low cost substrates for polycrystalline solar cells
US6896731B1 (en) P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
US5229625A (en) Schottky barrier gate type field effect transistor
JPS6230512B2 (enExample)
US5403771A (en) Process for producing a solar cell by means of epitaxial growth process
US20110027937A1 (en) Methods of forming photovoltaic devices
Späh et al. PN junctions in tungsten diselenide
JPH0652812B2 (ja) 金属−絶縁体−金属接合構造の製造方法
US4625071A (en) Particulate semiconductors and devices
US4338481A (en) Very thin silicon wafer base solar cell
EP0145403A2 (en) Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
CA1153480A (en) Thin film transistor
Chu et al. Polycrystalline silicon solar cells on low cost foreign substrates
US4477688A (en) Photovoltaic cells employing zinc phosphide
EP0042868A1 (en) Amorphous solar cells and method
US5793109A (en) Structure of ohmic electrode for semiconductor by atomic layer doping

Legal Events

Date Code Title Description
MKEX Expiry