CA1123525A - Semiconducteur amorphe pouvant supporter les hautes temperatures et methode de fabrication - Google Patents
Semiconducteur amorphe pouvant supporter les hautes temperatures et methode de fabricationInfo
- Publication number
- CA1123525A CA1123525A CA311,648A CA311648A CA1123525A CA 1123525 A CA1123525 A CA 1123525A CA 311648 A CA311648 A CA 311648A CA 1123525 A CA1123525 A CA 1123525A
- Authority
- CA
- Canada
- Prior art keywords
- amorphous
- host matrix
- semiconductor member
- amorphous semiconductor
- modifier material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 272
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims abstract description 293
- 239000011159 matrix material Substances 0.000 claims abstract description 212
- 239000003607 modifier Substances 0.000 claims abstract description 141
- 230000004913 activation Effects 0.000 claims abstract description 67
- 229910052796 boron Inorganic materials 0.000 claims abstract description 46
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000007787 solid Substances 0.000 claims abstract description 39
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 23
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 12
- 150000003624 transition metals Chemical class 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 12
- 230000000737 periodic effect Effects 0.000 claims description 10
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 abstract 1
- 238000001994 activation Methods 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 230000008859 change Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 230000007423 decrease Effects 0.000 description 12
- 230000003993 interaction Effects 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 11
- 239000002178 crystalline material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 230000009477 glass transition Effects 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- -1 as ~or example Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 229910021476 group 6 element Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 102100029469 WD repeat and HMG-box DNA-binding protein 1 Human genes 0.000 description 1
- 101710097421 WD repeat and HMG-box DNA-binding protein 1 Proteins 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006854 communication Effects 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- JXSJBGJIGXNWCI-UHFFFAOYSA-N diethyl 2-[(dimethoxyphosphorothioyl)thio]succinate Chemical compound CCOC(=O)CC(SP(=S)(OC)OC)C(=O)OCC JXSJBGJIGXNWCI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- OYFJQPXVCSSHAI-QFPUQLAESA-N enalapril maleate Chemical compound OC(=O)\C=C/C(O)=O.C([C@@H](C(=O)OCC)N[C@@H](C)C(=O)N1[C@@H](CCC1)C(O)=O)CC1=CC=CC=C1 OYFJQPXVCSSHAI-QFPUQLAESA-N 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229940061319 ovide Drugs 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Physical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/841,369 US4177474A (en) | 1977-05-18 | 1977-10-12 | High temperature amorphous semiconductor member and method of making the same |
| US841,369 | 1977-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1123525A true CA1123525A (fr) | 1982-05-11 |
Family
ID=25284694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA311,648A Expired CA1123525A (fr) | 1977-10-12 | 1978-09-20 | Semiconducteur amorphe pouvant supporter les hautes temperatures et methode de fabrication |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5464981A (fr) |
| AU (1) | AU523107B2 (fr) |
| CA (1) | CA1123525A (fr) |
| DE (1) | DE2844070A1 (fr) |
| ES (1) | ES474153A1 (fr) |
| FR (1) | FR2454186A1 (fr) |
| GB (1) | GB2007021B (fr) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
| NL8104140A (nl) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | Werkwijze voor het vervaardigen van amorfe halfgeleiderinrichtingen met verbeterde fotogevoelige eigenschappen alsmede als zodanig verkregen inrichtingen. |
| CA1176740A (fr) * | 1980-12-03 | 1984-10-23 | Yoshihisa Tawada | Cellule photovoltaique a haute tension ayant une heterojonction de semiconducteur amorphe et de silicium amorphe |
| IE53485B1 (en) * | 1981-02-12 | 1988-11-23 | Energy Conversion Devices Inc | Improved photoresponsive amorphous alloys |
| JPH03188682A (ja) * | 1981-04-30 | 1991-08-16 | Kanegafuchi Chem Ind Co Ltd | 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子 |
| JPS5814583A (ja) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子 |
| EP0070509B2 (fr) * | 1981-07-17 | 1993-05-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconducteur amorphe et dispositif photovoltaique en silicium amorphe |
| DE3277665D1 (en) * | 1981-08-07 | 1987-12-17 | British Petroleum Co Plc | Non-volatile electrically programmable memory device |
| JPS62162366A (ja) * | 1981-09-17 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
| JPH07105507B2 (ja) * | 1982-02-25 | 1995-11-13 | プラズマ・フィジクス・コ−ポレ−ション | 光起電力装置 |
| DE3314197A1 (de) * | 1982-04-28 | 1983-11-03 | Energy Conversion Devices, Inc., 48084 Troy, Mich. | P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer |
| JPS5957407A (ja) * | 1982-09-27 | 1984-04-03 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS59108370A (ja) * | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
| JPS58180074A (ja) * | 1983-03-28 | 1983-10-21 | Shunpei Yamazaki | 光電変換半導体装置 |
| ES8602301A1 (es) * | 1983-07-18 | 1985-11-01 | Energy Conversion Devices Inc | Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas |
| US4569697A (en) * | 1983-08-26 | 1986-02-11 | Energy Conversion Devices, Inc. | Method of forming photovoltaic quality amorphous alloys by passivating defect states |
| JPS62162367A (ja) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
| JPS6316678A (ja) * | 1986-12-26 | 1988-01-23 | Shunpei Yamazaki | 光電変換装置 |
| JP2648733B2 (ja) * | 1993-11-18 | 1997-09-03 | プラズマ・フィジクス・コーポレーション | 半導体装置 |
| JPH077168A (ja) * | 1994-04-15 | 1995-01-10 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
| TWI245288B (en) * | 2003-03-20 | 2005-12-11 | Sony Corp | Semiconductor memory element and semiconductor memory device using the same |
| US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
| CA1078078A (fr) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Dispositif a semiconducteur a barriere de schottky et methode de fabrication |
-
1978
- 1978-09-20 CA CA311,648A patent/CA1123525A/fr not_active Expired
- 1978-09-27 AU AU40237/78A patent/AU523107B2/en not_active Expired
- 1978-10-03 GB GB7839177A patent/GB2007021B/en not_active Expired
- 1978-10-10 DE DE19782844070 patent/DE2844070A1/de active Granted
- 1978-10-10 FR FR7828855A patent/FR2454186A1/fr active Granted
- 1978-10-11 ES ES474153A patent/ES474153A1/es not_active Expired
- 1978-10-12 JP JP12568278A patent/JPS5464981A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2454186B1 (fr) | 1984-08-24 |
| AU523107B2 (en) | 1982-07-15 |
| AU4023778A (en) | 1980-04-03 |
| ES474153A1 (es) | 1979-10-16 |
| DE2844070A1 (de) | 1979-04-26 |
| GB2007021B (en) | 1982-05-06 |
| JPS5464981A (en) | 1979-05-25 |
| JPS6230512B2 (fr) | 1987-07-02 |
| DE2844070C2 (fr) | 1990-02-01 |
| FR2454186A1 (fr) | 1980-11-07 |
| GB2007021A (en) | 1979-05-10 |
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