JPS5464981A - High temperature amorphous semiconductor member and method of producing same - Google Patents
High temperature amorphous semiconductor member and method of producing sameInfo
- Publication number
- JPS5464981A JPS5464981A JP12568278A JP12568278A JPS5464981A JP S5464981 A JPS5464981 A JP S5464981A JP 12568278 A JP12568278 A JP 12568278A JP 12568278 A JP12568278 A JP 12568278A JP S5464981 A JPS5464981 A JP S5464981A
- Authority
- JP
- Japan
- Prior art keywords
- high temperature
- amorphous semiconductor
- producing same
- semiconductor member
- temperature amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Physical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/841,369 US4177474A (en) | 1977-05-18 | 1977-10-12 | High temperature amorphous semiconductor member and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5464981A true JPS5464981A (en) | 1979-05-25 |
JPS6230512B2 JPS6230512B2 (fr) | 1987-07-02 |
Family
ID=25284694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12568278A Granted JPS5464981A (en) | 1977-10-12 | 1978-10-12 | High temperature amorphous semiconductor member and method of producing same |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5464981A (fr) |
AU (1) | AU523107B2 (fr) |
CA (1) | CA1123525A (fr) |
DE (1) | DE2844070A1 (fr) |
ES (1) | ES474153A1 (fr) |
FR (1) | FR2454186A1 (fr) |
GB (1) | GB2007021B (fr) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
JPS5814583A (ja) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | アモルフアス半導体およびアモルフアス半導体/アモルフアスシリコン・ヘテロ接合光起電力素子 |
JPS5890790A (ja) * | 1981-08-07 | 1983-05-30 | ザ ブリテイッシュ ペトロレアム カンパニ− ピ−.エル.シ− | 半導体装置 |
JPS58148423A (ja) * | 1982-02-25 | 1983-09-03 | プラズマ・フイジクス・コ−ポレ−シヨン | 半導体装置 |
JPS58180074A (ja) * | 1983-03-28 | 1983-10-21 | Shunpei Yamazaki | 光電変換半導体装置 |
JPS5957407A (ja) * | 1982-09-27 | 1984-04-03 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS6169177A (ja) * | 1983-07-18 | 1986-04-09 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 光起電力関連用の改良された狭バンドギヤツプ・アモルフアス・アロイ |
JPS62162367A (ja) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
JPS62162366A (ja) * | 1981-09-17 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
JPS6316678A (ja) * | 1986-12-26 | 1988-01-23 | Shunpei Yamazaki | 光電変換装置 |
JPH03188682A (ja) * | 1981-04-30 | 1991-08-16 | Kanegafuchi Chem Ind Co Ltd | 高電圧アモルファス半導体/アモルファスシリコン・ヘテロ接合光起電力素子 |
JPH077168A (ja) * | 1994-04-15 | 1995-01-10 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPH0722638A (ja) * | 1993-11-18 | 1995-01-24 | Plasma Physics Corp | 半導体装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8104140A (nl) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | Werkwijze voor het vervaardigen van amorfe halfgeleiderinrichtingen met verbeterde fotogevoelige eigenschappen alsmede als zodanig verkregen inrichtingen. |
CA1176740A (fr) * | 1980-12-03 | 1984-10-23 | Yoshihisa Tawada | Cellule photovoltaique a haute tension ayant une heterojonction de semiconducteur amorphe et de silicium amorphe |
IE53485B1 (en) * | 1981-02-12 | 1988-11-23 | Energy Conversion Devices Inc | Improved photoresponsive amorphous alloys |
EP0070509B2 (fr) * | 1981-07-17 | 1993-05-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconducteur amorphe et dispositif photovoltaique en silicium amorphe |
DE3314197A1 (de) * | 1982-04-28 | 1983-11-03 | Energy Conversion Devices, Inc., 48084 Troy, Mich. | P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer |
JPS59108370A (ja) * | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
US4569697A (en) * | 1983-08-26 | 1986-02-11 | Energy Conversion Devices, Inc. | Method of forming photovoltaic quality amorphous alloys by passivating defect states |
TWI245288B (en) * | 2003-03-20 | 2005-12-11 | Sony Corp | Semiconductor memory element and semiconductor memory device using the same |
US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
CA1078078A (fr) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Dispositif a semiconducteur a barriere de schottky et methode de fabrication |
-
1978
- 1978-09-20 CA CA311,648A patent/CA1123525A/fr not_active Expired
- 1978-09-27 AU AU40237/78A patent/AU523107B2/en not_active Expired
- 1978-10-03 GB GB7839177A patent/GB2007021B/en not_active Expired
- 1978-10-10 DE DE19782844070 patent/DE2844070A1/de active Granted
- 1978-10-10 FR FR7828855A patent/FR2454186A1/fr active Granted
- 1978-10-11 ES ES474153A patent/ES474153A1/es not_active Expired
- 1978-10-12 JP JP12568278A patent/JPS5464981A/ja active Granted
Non-Patent Citations (2)
Title |
---|
PHILOSMAG=1977 * |
SOLIDSTATECOMMUN=1975 * |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
JPH0544198B2 (fr) * | 1981-02-17 | 1993-07-05 | Kanegafuchi Chemical Ind | |
JPH03188682A (ja) * | 1981-04-30 | 1991-08-16 | Kanegafuchi Chem Ind Co Ltd | 高電圧アモルファス半導体/アモルファスシリコン・ヘテロ接合光起電力素子 |
JPS5814583A (ja) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | アモルフアス半導体およびアモルフアス半導体/アモルフアスシリコン・ヘテロ接合光起電力素子 |
JPH0554272B2 (fr) * | 1981-07-17 | 1993-08-12 | Kanegafuchi Chemical Ind | |
JPS5890790A (ja) * | 1981-08-07 | 1983-05-30 | ザ ブリテイッシュ ペトロレアム カンパニ− ピ−.エル.シ− | 半導体装置 |
JPH0478028B2 (fr) * | 1981-08-07 | 1992-12-10 | Buriteitsushu Pitorooriamu Co Plc Za | |
JPS62162366A (ja) * | 1981-09-17 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
JPS58148423A (ja) * | 1982-02-25 | 1983-09-03 | プラズマ・フイジクス・コ−ポレ−シヨン | 半導体装置 |
JPH0460353B2 (fr) * | 1982-09-27 | 1992-09-25 | Sanyo Electric Co | |
JPS5957407A (ja) * | 1982-09-27 | 1984-04-03 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS58180074A (ja) * | 1983-03-28 | 1983-10-21 | Shunpei Yamazaki | 光電変換半導体装置 |
JPS6169177A (ja) * | 1983-07-18 | 1986-04-09 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 光起電力関連用の改良された狭バンドギヤツプ・アモルフアス・アロイ |
JPS62162367A (ja) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体 |
JPS6316678A (ja) * | 1986-12-26 | 1988-01-23 | Shunpei Yamazaki | 光電変換装置 |
JPH0722638A (ja) * | 1993-11-18 | 1995-01-24 | Plasma Physics Corp | 半導体装置 |
JPH077168A (ja) * | 1994-04-15 | 1995-01-10 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
FR2454186B1 (fr) | 1984-08-24 |
AU523107B2 (en) | 1982-07-15 |
AU4023778A (en) | 1980-04-03 |
ES474153A1 (es) | 1979-10-16 |
DE2844070A1 (de) | 1979-04-26 |
GB2007021B (en) | 1982-05-06 |
JPS6230512B2 (fr) | 1987-07-02 |
DE2844070C2 (fr) | 1990-02-01 |
FR2454186A1 (fr) | 1980-11-07 |
GB2007021A (en) | 1979-05-10 |
CA1123525A (fr) | 1982-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53143180A (en) | Amorphous semiconductor structure and method of producing same | |
JPS5464981A (en) | High temperature amorphous semiconductor member and method of producing same | |
JPS53121493A (en) | Semiconductor and method of producing same | |
JPS53148273A (en) | Method of producing semiconductor | |
JPS5416193A (en) | Semiconductor solar battery and method of producing same | |
JPS53134378A (en) | Semiconductor and method of forming same | |
JPS53107287A (en) | Method of producing semiconductor | |
JPS53128286A (en) | Method of producing semiconductor | |
JPS5453861A (en) | Semiconductor device and method of producing same | |
JPS53143161A (en) | Method of producing semiconductor article | |
JPS5427376A (en) | Method of producing semiconductor | |
JPS53128273A (en) | Method of producing semiconductor | |
JPS5419677A (en) | Method of producing semiconductor | |
JPS53138292A (en) | Method of producing semiconductor | |
JPS5422159A (en) | Method of producing semiconductor | |
GB2014361B (en) | Method of producing semiconductor devices | |
JPS5478678A (en) | Semiconductor and method of producing same | |
JPS5491187A (en) | Semiconductor and method of fabricating same | |
JPS5390779A (en) | Semiconductor and method of producing same | |
JPS53100785A (en) | Device and method of producing same | |
JPS53100784A (en) | Semiconductor and method of producing same | |
JPS5419358A (en) | Method of producing semiconductor element | |
JPS5491740A (en) | Semiconductor apparatus and method of producing same | |
JPS5390776A (en) | Method of producing semiconductor | |
JPS53108387A (en) | Junction semiconductor and method of producing same |