CA1063250A - Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same - Google Patents

Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same

Info

Publication number
CA1063250A
CA1063250A CA251,209A CA251209A CA1063250A CA 1063250 A CA1063250 A CA 1063250A CA 251209 A CA251209 A CA 251209A CA 1063250 A CA1063250 A CA 1063250A
Authority
CA
Canada
Prior art keywords
cathode
thyristor
region
diode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA251,209A
Other languages
English (en)
French (fr)
Inventor
Derrick J. Page
Earl S. Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1063250A publication Critical patent/CA1063250A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P34/40—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
CA251,209A 1975-05-27 1976-04-27 Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same Expired CA1063250A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/581,255 US4238761A (en) 1975-05-27 1975-05-27 Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode

Publications (1)

Publication Number Publication Date
CA1063250A true CA1063250A (en) 1979-09-25

Family

ID=24324472

Family Applications (1)

Application Number Title Priority Date Filing Date
CA251,209A Expired CA1063250A (en) 1975-05-27 1976-04-27 Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same

Country Status (7)

Country Link
US (1) US4238761A (OSRAM)
JP (1) JPS51145283A (OSRAM)
BE (1) BE842125A (OSRAM)
CA (1) CA1063250A (OSRAM)
DE (1) DE2622193A1 (OSRAM)
FR (1) FR2312859A1 (OSRAM)
GB (1) GB1532097A (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599230A (en) * 1977-08-26 1981-09-30 Gen Electric Unijunction transistors
FR2406301A1 (fr) * 1977-10-17 1979-05-11 Silicium Semiconducteur Ssc Procede de fabrication de dispositifs semi-conducteurs rapides
DE2805813C3 (de) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
CN100372126C (zh) * 2005-11-25 2008-02-27 清华大学 高频晶闸管
DE102009051828B4 (de) * 2009-11-04 2014-05-22 Infineon Technologies Ag Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung
CN102456719B (zh) * 2011-12-29 2014-02-26 东南大学 一种可提高pn结反向击穿电压的装置
US20180233321A1 (en) * 2017-02-16 2018-08-16 Lam Research Corporation Ion directionality esc
CN108615785B (zh) * 2018-05-03 2019-09-27 电子科技大学 一种具有深n+空穴电流阻挡层的光控晶闸管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3487276A (en) * 1966-11-15 1969-12-30 Westinghouse Electric Corp Thyristor having improved operating characteristics at high temperature
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
US3586932A (en) * 1969-12-12 1971-06-22 Gen Electric Five layer gate controlled thyristor with novel turn on characteristics
US3681667A (en) * 1969-12-12 1972-08-01 Gen Electric Controlled rectifier and triac with laterally off-set gate and auxiliary segments for accelerated turn on
CA927014A (en) * 1970-05-07 1973-05-22 Westinghouse Electric Corporation Symmetrical switch having a single gate for controlling firing in both directions
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
JPS5718347B2 (OSRAM) * 1974-01-07 1982-04-16

Also Published As

Publication number Publication date
GB1532097A (en) 1978-11-15
US4238761A (en) 1980-12-09
BE842125A (fr) 1976-11-22
JPS51145283A (en) 1976-12-14
FR2312859A1 (fr) 1976-12-24
JPS5549425B2 (OSRAM) 1980-12-11
DE2622193A1 (de) 1976-12-16

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