BE842125A - Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor - Google Patents
Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristorInfo
- Publication number
- BE842125A BE842125A BE167262A BE167262A BE842125A BE 842125 A BE842125 A BE 842125A BE 167262 A BE167262 A BE 167262A BE 167262 A BE167262 A BE 167262A BE 842125 A BE842125 A BE 842125A
- Authority
- BE
- Belgium
- Prior art keywords
- thyristor
- door
- disconnection
- manufacturing
- amplifier
- Prior art date
Links
Classifications
-
- H10P34/40—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/581,255 US4238761A (en) | 1975-05-27 | 1975-05-27 | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE842125A true BE842125A (fr) | 1976-11-22 |
Family
ID=24324472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE167262A BE842125A (fr) | 1975-05-27 | 1976-05-21 | Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4238761A (OSRAM) |
| JP (1) | JPS51145283A (OSRAM) |
| BE (1) | BE842125A (OSRAM) |
| CA (1) | CA1063250A (OSRAM) |
| DE (1) | DE2622193A1 (OSRAM) |
| FR (1) | FR2312859A1 (OSRAM) |
| GB (1) | GB1532097A (OSRAM) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1599230A (en) * | 1977-08-26 | 1981-09-30 | Gen Electric | Unijunction transistors |
| FR2406301A1 (fr) * | 1977-10-17 | 1979-05-11 | Silicium Semiconducteur Ssc | Procede de fabrication de dispositifs semi-conducteurs rapides |
| DE2805813C3 (de) * | 1978-02-11 | 1984-02-23 | Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg | l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE |
| US4314266A (en) * | 1978-07-20 | 1982-02-02 | Electric Power Research Institute, Inc. | Thyristor with voltage breakover current control separated from main emitter by current limit region |
| DE2945335A1 (de) * | 1979-11-09 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor |
| DE19505387A1 (de) * | 1995-02-17 | 1996-08-22 | Abb Management Ag | Druckkontaktgehäuse für Halbleiterbauelemente |
| CN100372126C (zh) * | 2005-11-25 | 2008-02-27 | 清华大学 | 高频晶闸管 |
| DE102009051828B4 (de) * | 2009-11-04 | 2014-05-22 | Infineon Technologies Ag | Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung |
| CN102456719B (zh) * | 2011-12-29 | 2014-02-26 | 东南大学 | 一种可提高pn结反向击穿电压的装置 |
| US20180233321A1 (en) * | 2017-02-16 | 2018-08-16 | Lam Research Corporation | Ion directionality esc |
| CN108615785B (zh) * | 2018-05-03 | 2019-09-27 | 电子科技大学 | 一种具有深n+空穴电流阻挡层的光控晶闸管 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
| US3487276A (en) * | 1966-11-15 | 1969-12-30 | Westinghouse Electric Corp | Thyristor having improved operating characteristics at high temperature |
| US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| US3579060A (en) * | 1969-03-21 | 1971-05-18 | Gen Electric | Thyristor with improved current and voltage handling characteristics |
| BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
| US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
| US3586932A (en) * | 1969-12-12 | 1971-06-22 | Gen Electric | Five layer gate controlled thyristor with novel turn on characteristics |
| US3681667A (en) * | 1969-12-12 | 1972-08-01 | Gen Electric | Controlled rectifier and triac with laterally off-set gate and auxiliary segments for accelerated turn on |
| CA927014A (en) * | 1970-05-07 | 1973-05-22 | Westinghouse Electric Corporation | Symmetrical switch having a single gate for controlling firing in both directions |
| DE2211116A1 (de) * | 1972-03-08 | 1973-09-13 | Semikron Gleichrichterbau | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps |
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| US3881964A (en) * | 1973-03-05 | 1975-05-06 | Westinghouse Electric Corp | Annealing to control gate sensitivity of gated semiconductor devices |
| US3896476A (en) * | 1973-05-02 | 1975-07-22 | Mitsubishi Electric Corp | Semiconductor switching device |
| US4083063A (en) * | 1973-10-09 | 1978-04-04 | General Electric Company | Gate turnoff thyristor with a pilot scr |
| JPS5718347B2 (OSRAM) * | 1974-01-07 | 1982-04-16 |
-
1975
- 1975-05-27 US US05/581,255 patent/US4238761A/en not_active Expired - Lifetime
-
1976
- 1976-04-27 CA CA251,209A patent/CA1063250A/en not_active Expired
- 1976-05-19 DE DE19762622193 patent/DE2622193A1/de not_active Withdrawn
- 1976-05-20 FR FR7615287A patent/FR2312859A1/fr not_active Withdrawn
- 1976-05-21 BE BE167262A patent/BE842125A/xx unknown
- 1976-05-21 GB GB21027/76A patent/GB1532097A/en not_active Expired
- 1976-05-27 JP JP51060696A patent/JPS51145283A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1532097A (en) | 1978-11-15 |
| CA1063250A (en) | 1979-09-25 |
| US4238761A (en) | 1980-12-09 |
| JPS51145283A (en) | 1976-12-14 |
| FR2312859A1 (fr) | 1976-12-24 |
| JPS5549425B2 (OSRAM) | 1980-12-11 |
| DE2622193A1 (de) | 1976-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL7706005A (nl) | Buisvormige structuur en werkwijze voor de ver- vaardiging daarvan. | |
| NL7605617A (nl) | Kweekblok en een werkwijze voor het vervaardi- gen daarvan. | |
| RO76917A (ro) | Profil compus,termoizolant,precum si procedeu si dispozitiv pentru fabricarea acestuia | |
| NO159958C (no) | Roerkobling og fremgangsmaate for dennes fremstilling. | |
| NL7806343A (nl) | Kolomvormige konstruktie en werkwijze voor de vervaar- diging daarvan. | |
| BE877804A (nl) | Roestvrij stalen boorschoef, en werkwijze voor het vervaardigen daarvan | |
| FR2337893A1 (fr) | Procede de fabrication de micro-motifs et micro-substrats appropries | |
| IT1043679B (it) | Metodo e mezzi per prolungare la senza fine per trattori | |
| FR2352670A1 (fr) | Rouleau encreur, son procede de fabrication et encre utilisee avec ce rouleau | |
| FR2312859A1 (fr) | Thyristor amplificateur a porte integre, avec deconnexion de la porte assistee, et procede de fabrication de ce thyristor | |
| NL7700527A (nl) | Structuurlaminaat en werkwijze ter vervaardiging ervan. | |
| FR2328676A1 (fr) | Procede de fabrication de laitier expanse | |
| NL7811035A (nl) | Chinolylguanidinederivaten en werkwijze ter bereiding daarvan. | |
| NO821851L (no) | 6,61-oksybis-halogensubstituert-pyron-derivater og fremgangsmaate for fremstilling derav | |
| IT1081122B (it) | Metodo di fabbricazione di un dispositivo,e dispositivo fabbricato con l'ausilio di tale metodo | |
| RO78178A (ro) | Procedeu si dispozitiv pentru fabricarea tevilor cu aripioare transversale | |
| NL7711372A (nl) | Geintegreerde magneetkopstructuur en werkwijze voor het vervaardigen daarvan. | |
| BE846029A (fr) | Fermeture a glissiere, procede et dispositif pour sa fabrication | |
| FR2301378A1 (fr) | Procede de fabrication d'ele | |
| FR2333591A1 (fr) | Procede et dispositif pour le formage de bandes en vue de la fabrication de profiles fendus | |
| NL7511267A (nl) | Geprefabriceerd isolerend paneel, alsmede werk- wijze voor het vervaardigen daarvan. | |
| IT1060761B (it) | Struttura saldata per valvolea saracinesca e metodo di fabbricazione | |
| NL7609315A (nl) | Fotogeleidend element en werkwijze voor de ver- vaardiging daarvan. | |
| BE858587A (fr) | Argile moussante perfectionnee et procede de fabrication | |
| PL198725A1 (pl) | Srodek owadobojczy i roztoczobojczy oraz sposob wytwarzania nowych(dwu)-tiofosforanow trojfluorometylotio-fenylowych |