CA1038969A - Methode de formation des bords de pastilles semiconductrices - Google Patents
Methode de formation des bords de pastilles semiconductricesInfo
- Publication number
- CA1038969A CA1038969A CA232,120A CA232120A CA1038969A CA 1038969 A CA1038969 A CA 1038969A CA 232120 A CA232120 A CA 232120A CA 1038969 A CA1038969 A CA 1038969A
- Authority
- CA
- Canada
- Prior art keywords
- wafer
- mesa
- junction
- gaps
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 235000012431 wafers Nutrition 0.000 title 1
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000008188 pellet Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49928874A | 1974-08-21 | 1974-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1038969A true CA1038969A (fr) | 1978-09-19 |
Family
ID=23984661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA232,120A Expired CA1038969A (fr) | 1974-08-21 | 1975-07-23 | Methode de formation des bords de pastilles semiconductrices |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5146076A (fr) |
| BE (1) | BE832633A (fr) |
| CA (1) | CA1038969A (fr) |
| DE (1) | DE2536108A1 (fr) |
| FR (1) | FR2282722A1 (fr) |
| GB (1) | GB1471116A (fr) |
| IT (1) | IT1040004B (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7607298A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze. |
| FR2410366A1 (fr) * | 1977-11-29 | 1979-06-22 | Radiotechnique Compelec | Transistor de type mesa et procede de realisation de ce transistor |
| JPS5895553A (ja) * | 1981-12-01 | 1983-06-07 | Nippon Shokubai Kagaku Kogyo Co Ltd | 耐熱衝撃性の改良されたハニカム触媒の製造方法 |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| GB2176338A (en) * | 1985-06-06 | 1986-12-17 | Marconi Electronic Devices | Edge contouring in a semiconductor device |
| JPH0777240B2 (ja) * | 1989-01-20 | 1995-08-16 | 富士通株式会社 | 半導体装置の製造方法 |
| JPH03129854A (ja) * | 1989-10-16 | 1991-06-03 | Toshiba Corp | 半導体装置の製造方法 |
| DE19536438A1 (de) * | 1995-09-29 | 1997-04-03 | Siemens Ag | Halbleiterbauelement und Herstellverfahren |
-
1975
- 1975-07-23 CA CA232,120A patent/CA1038969A/fr not_active Expired
- 1975-07-23 IT IT2568975A patent/IT1040004B/it active
- 1975-08-12 GB GB3354775A patent/GB1471116A/en not_active Expired
- 1975-08-13 DE DE19752536108 patent/DE2536108A1/de active Pending
- 1975-08-19 FR FR7525662A patent/FR2282722A1/fr not_active Withdrawn
- 1975-08-20 JP JP10165875A patent/JPS5146076A/ja active Granted
- 1975-08-21 BE BE159371A patent/BE832633A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5227033B2 (fr) | 1977-07-18 |
| GB1471116A (en) | 1977-04-21 |
| BE832633A (fr) | 1975-12-16 |
| FR2282722A1 (fr) | 1976-03-19 |
| JPS5146076A (ja) | 1976-04-20 |
| IT1040004B (it) | 1979-12-20 |
| DE2536108A1 (de) | 1976-03-11 |
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