JPS5227033B2 - - Google Patents
Info
- Publication number
- JPS5227033B2 JPS5227033B2 JP10165875A JP10165875A JPS5227033B2 JP S5227033 B2 JPS5227033 B2 JP S5227033B2 JP 10165875 A JP10165875 A JP 10165875A JP 10165875 A JP10165875 A JP 10165875A JP S5227033 B2 JPS5227033 B2 JP S5227033B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49928874A | 1974-08-21 | 1974-08-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5146076A JPS5146076A (ja) | 1976-04-20 |
| JPS5227033B2 true JPS5227033B2 (fr) | 1977-07-18 |
Family
ID=23984661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10165875A Granted JPS5146076A (ja) | 1974-08-21 | 1975-08-20 | Handotaisochinoseizoho |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5146076A (fr) |
| BE (1) | BE832633A (fr) |
| CA (1) | CA1038969A (fr) |
| DE (1) | DE2536108A1 (fr) |
| FR (1) | FR2282722A1 (fr) |
| GB (1) | GB1471116A (fr) |
| IT (1) | IT1040004B (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7607298A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze. |
| FR2410366A1 (fr) * | 1977-11-29 | 1979-06-22 | Radiotechnique Compelec | Transistor de type mesa et procede de realisation de ce transistor |
| JPS5895553A (ja) * | 1981-12-01 | 1983-06-07 | Nippon Shokubai Kagaku Kogyo Co Ltd | 耐熱衝撃性の改良されたハニカム触媒の製造方法 |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| GB2176338A (en) * | 1985-06-06 | 1986-12-17 | Marconi Electronic Devices | Edge contouring in a semiconductor device |
| JPH0777240B2 (ja) * | 1989-01-20 | 1995-08-16 | 富士通株式会社 | 半導体装置の製造方法 |
| JPH03129854A (ja) * | 1989-10-16 | 1991-06-03 | Toshiba Corp | 半導体装置の製造方法 |
| DE19536438A1 (de) * | 1995-09-29 | 1997-04-03 | Siemens Ag | Halbleiterbauelement und Herstellverfahren |
-
1975
- 1975-07-23 CA CA232,120A patent/CA1038969A/fr not_active Expired
- 1975-07-23 IT IT2568975A patent/IT1040004B/it active
- 1975-08-12 GB GB3354775A patent/GB1471116A/en not_active Expired
- 1975-08-13 DE DE19752536108 patent/DE2536108A1/de active Pending
- 1975-08-19 FR FR7525662A patent/FR2282722A1/fr not_active Withdrawn
- 1975-08-20 JP JP10165875A patent/JPS5146076A/ja active Granted
- 1975-08-21 BE BE159371A patent/BE832633A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1471116A (en) | 1977-04-21 |
| BE832633A (fr) | 1975-12-16 |
| FR2282722A1 (fr) | 1976-03-19 |
| CA1038969A (fr) | 1978-09-19 |
| JPS5146076A (ja) | 1976-04-20 |
| IT1040004B (it) | 1979-12-20 |
| DE2536108A1 (de) | 1976-03-11 |