CA1036272A - Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same - Google Patents

Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same

Info

Publication number
CA1036272A
CA1036272A CA242,234A CA242234A CA1036272A CA 1036272 A CA1036272 A CA 1036272A CA 242234 A CA242234 A CA 242234A CA 1036272 A CA1036272 A CA 1036272A
Authority
CA
Canada
Prior art keywords
semiconductor layer
same
liquid phase
epitaxially growing
laminate semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA242,234A
Other languages
English (en)
French (fr)
Inventor
Yoshiji Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of CA1036272A publication Critical patent/CA1036272A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
CA242,234A 1974-12-20 1975-12-18 Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same Expired CA1036272A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49145599A JPS5248949B2 (ja) 1974-12-20 1974-12-20

Publications (1)

Publication Number Publication Date
CA1036272A true CA1036272A (en) 1978-08-08

Family

ID=15388776

Family Applications (1)

Application Number Title Priority Date Filing Date
CA242,234A Expired CA1036272A (en) 1974-12-20 1975-12-18 Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same

Country Status (7)

Country Link
US (1) US4013040A (ja)
JP (1) JPS5248949B2 (ja)
CA (1) CA1036272A (ja)
DE (1) DE2556928C3 (ja)
FR (1) FR2295565A1 (ja)
GB (1) GB1495310A (ja)
NL (1) NL166074C (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129882A (en) * 1975-05-07 1976-11-11 Nippon Telegr & Teleph Corp <Ntt> Process for liquid phase epitaxial growth
JPS5556625A (en) * 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Semiconductor crystal growing device
FR2470810A1 (fr) * 1979-12-07 1981-06-12 Labo Electronique Physique Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
FR2476690A1 (fr) * 1980-02-27 1981-08-28 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
DE3345214A1 (de) * 1983-12-14 1985-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode
DE3427056A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus
DE102021123241A1 (de) * 2021-09-08 2023-03-09 Tdk Electronics Ag Verfahren zum Aufbringen einer Beschichtung auf mindestens ein elektronisches Bauteil und Sensoranordnung mit einer Beschichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US3821039A (en) * 1973-03-22 1974-06-28 Rca Corp Method of epitaxially depositing a semiconductor material on a substrate
NL7306004A (ja) * 1973-05-01 1974-11-05

Also Published As

Publication number Publication date
DE2556928C3 (de) 1979-02-22
FR2295565A1 (fr) 1976-07-16
NL7514816A (nl) 1976-06-22
GB1495310A (en) 1977-12-14
NL166074B (nl) 1981-01-15
DE2556928A1 (de) 1976-06-24
DE2556928B2 (de) 1978-06-22
US4013040A (en) 1977-03-22
NL166074C (nl) 1981-06-15
FR2295565B1 (ja) 1978-05-19
JPS5248949B2 (ja) 1977-12-13
JPS5171882A (ja) 1976-06-22

Similar Documents

Publication Publication Date Title
JPS54124897A (en) Method and apparatus for forming epitaxial layer of indium phosphide in gas phase
CA987794A (en) Method and apparatus for cleaning the surface of a semiconductor slice
BG24533A3 (en) Method of packing objects in extensible film material and device for effecting same
JPS52141693A (en) Method and apparatus for preparing blood film on flat substrate
CA1009993A (en) Liquid dispensing method and apparatus
ZA757128B (en) Procedure and apparatus for producing compound thin films
IT8149696A0 (it) Procedimento ed apparecchio per farcrescere uno strato di tellururo di mercurio-cadmio mediante epitassia in fase liquida
CA931049A (en) Method and apparatus for epitaxially growing thin films
CA986393A (en) Method and apparatus for epitaxially growing a semiconductor material on a substrate from the liquid phase
CA1031684A (en) Method and apparatus for forming sealed packages
CA1036272A (en) Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same
CA1007872A (en) Offshore station and method of maintaining the same
CA987795A (en) Apparatus and method for making multi-layer epitaxial growth devices
CA1026217A (en) Method of and device for growing epitaxial layers from the liquid phase
JPS5376177A (en) Method and apparatus for growing crystal
AU527905B2 (en) Method and apparatus for forming a laminate
GB2055055B (en) Method for growing a liquid phase epitaxial layer on a semiconductor substrate
CA1020631A (en) Control and gauging method and apparatus using locked oscillators
CA968672A (en) Apparatus and method for producing dislocation-free aiiibv single crystals
JPS5376176A (en) Method and apparatus for growing crystal
CA1028239A (en) Liquid jet cutting apparatus and method
AU473451B2 (en) Method and apparatus for stacking
JPS51126047A (en) Growth device for semi-conductor crystals
CA1014674A (en) Method and apparatus for supporting substrates during bonding
CA973976A (en) Semiconductor device having growth interfaces, and method of reducing crystal dislocations