CA931049A - Method and apparatus for epitaxially growing thin films - Google Patents
Method and apparatus for epitaxially growing thin filmsInfo
- Publication number
- CA931049A CA931049A CA055030A CA55030A CA931049A CA 931049 A CA931049 A CA 931049A CA 055030 A CA055030 A CA 055030A CA 55030 A CA55030 A CA 55030A CA 931049 A CA931049 A CA 931049A
- Authority
- CA
- Canada
- Prior art keywords
- thin films
- epitaxially growing
- growing thin
- epitaxially
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
- Y10S117/907—Refluxing atmosphere
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76330768A | 1968-09-27 | 1968-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA931049A true CA931049A (en) | 1973-07-31 |
Family
ID=25067452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA055030A Expired CA931049A (en) | 1968-09-27 | 1969-06-23 | Method and apparatus for epitaxially growing thin films |
Country Status (6)
Country | Link |
---|---|
US (1) | US3619283A (en) |
JP (1) | JPS4949309B1 (en) |
CA (1) | CA931049A (en) |
DE (1) | DE1947382C3 (en) |
FR (1) | FR2018987A1 (en) |
GB (1) | GB1282167A (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725135A (en) * | 1968-10-09 | 1973-04-03 | Honeywell Inc | PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te |
US4496609A (en) * | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
US3779803A (en) * | 1969-11-17 | 1973-12-18 | Ibm | Infrared sensitive semiconductor device and method of manufacture |
US3884788A (en) * | 1973-08-30 | 1975-05-20 | Honeywell Inc | Substrate preparation for liquid phase epitaxy of mercury cadmium telluride |
US3929556A (en) * | 1974-02-19 | 1975-12-30 | Cincinnati Electronics Corp | Nucleating growth of lead-tin-telluride single crystal with an oriented barium fluoride substrate |
JPS5182824A (en) * | 1975-01-17 | 1976-07-20 | Tk Carburettor | JIDONENRYOKOTSUKU |
US4115163A (en) * | 1976-01-08 | 1978-09-19 | Yulia Ivanovna Gorina | Method of growing epitaxial semiconductor films utilizing radiant heating |
US4118857A (en) * | 1977-01-12 | 1978-10-10 | The United States Of America As Represented By The Secretary Of The Army | Flipped method for characterization of epitaxial layers |
DE3168017D1 (en) * | 1980-05-27 | 1985-02-14 | Secr Defence Brit | Manufacture of cadmium mercury telluride |
US4439267A (en) * | 1982-09-29 | 1984-03-27 | The United States Of America As Represented By The Secretary Of The Army | Vapor-phase method for growing mercury cadmium telluride |
US4447470A (en) * | 1982-12-06 | 1984-05-08 | Ford Aerospace & Communications Corporation | Composition control of CSVPE HgCdTe |
US4487813A (en) * | 1982-12-06 | 1984-12-11 | Ford Aerospace & Communications Corporation | Composition control of CSVPE HgCdTe |
JPS59140365A (en) * | 1983-02-01 | 1984-08-11 | Ushio Inc | Photochemical vapor deposition device |
US4732110A (en) * | 1983-04-29 | 1988-03-22 | Hughes Aircraft Company | Inverted positive vertical flow chemical vapor deposition reactor chamber |
GB8324531D0 (en) * | 1983-09-13 | 1983-10-12 | Secr Defence | Cadmium mercury telluride |
US4583492A (en) * | 1983-12-19 | 1986-04-22 | United Technologies Corporation | High rate, low temperature silicon deposition system |
US5259900A (en) * | 1985-11-26 | 1993-11-09 | Texas Instruments Incorporated | Reflux annealing device and method |
US4950358A (en) * | 1986-07-07 | 1990-08-21 | Santa Barbara Research Center | Vapor phase epitaxy of semiconductor material in a quasi-open system |
JPS63213116A (en) * | 1987-02-28 | 1988-09-06 | Hoya Corp | Production of magnetic recording medium |
JP2754765B2 (en) * | 1989-07-19 | 1998-05-20 | 富士通株式会社 | Method for manufacturing compound semiconductor crystal |
GB9717726D0 (en) * | 1997-08-22 | 1997-10-29 | Univ Durham | Improvements in and relating to crystal growth |
GB2452011B (en) * | 2007-05-18 | 2012-02-08 | Kromek Ltd | Apparatus for crystal growth |
US20090020070A1 (en) * | 2007-07-19 | 2009-01-22 | Michael Schafer | Vacuum evaporation apparatus for solid materials |
US8371705B2 (en) * | 2008-03-11 | 2013-02-12 | The United States Of America As Represented By The Secretary Of The Army | Mirrors and methods of making same |
CN107675251B (en) * | 2017-09-28 | 2019-07-16 | 哈尔滨工业大学 | A kind of gas-phase synthesizing method of high-purity cadmium selenide polycrystalline material |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2759861A (en) * | 1954-09-22 | 1956-08-21 | Bell Telephone Labor Inc | Process of making photoconductive compounds |
US2994621A (en) * | 1956-03-29 | 1961-08-01 | Baldwin Piano Co | Semi-conductive films and methods of producing them |
NL103088C (en) * | 1957-06-08 | |||
US3394390A (en) * | 1965-03-31 | 1968-07-23 | Texas Instruments Inc | Method for making compond semiconductor materials |
-
1968
- 1968-09-27 US US763307A patent/US3619283A/en not_active Expired - Lifetime
-
1969
- 1969-06-23 CA CA055030A patent/CA931049A/en not_active Expired
- 1969-08-19 FR FR6928460A patent/FR2018987A1/fr not_active Withdrawn
- 1969-09-02 GB GB43364/69A patent/GB1282167A/en not_active Expired
- 1969-09-10 JP JP44071290A patent/JPS4949309B1/ja active Pending
- 1969-09-19 DE DE1947382A patent/DE1947382C3/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1947382B2 (en) | 1973-04-19 |
DE1947382C3 (en) | 1973-12-06 |
JPS4949309B1 (en) | 1974-12-26 |
DE1947382A1 (en) | 1970-04-16 |
GB1282167A (en) | 1972-07-19 |
FR2018987A1 (en) | 1970-06-26 |
US3619283A (en) | 1971-11-09 |
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