NL7306004A - - Google Patents

Info

Publication number
NL7306004A
NL7306004A NL7306004A NL7306004A NL7306004A NL 7306004 A NL7306004 A NL 7306004A NL 7306004 A NL7306004 A NL 7306004A NL 7306004 A NL7306004 A NL 7306004A NL 7306004 A NL7306004 A NL 7306004A
Authority
NL
Netherlands
Application number
NL7306004A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7306004A priority Critical patent/NL7306004A/xx
Priority to DE2418830A priority patent/DE2418830C3/de
Priority to IT21961/74A priority patent/IT1010136B/it
Priority to CA198,472A priority patent/CA1026217A/en
Priority to GB1843474A priority patent/GB1452546A/en
Priority to JP4717274A priority patent/JPS5337186B2/ja
Priority to CH585174A priority patent/CH581497A5/xx
Priority to US05/464,790 priority patent/US3940296A/en
Priority to FR7415047A priority patent/FR2228302B1/fr
Priority to AU68410/74A priority patent/AU488274B2/en
Priority to BE143814A priority patent/BE814426A/xx
Publication of NL7306004A publication Critical patent/NL7306004A/xx
Priority to US05/762,429 priority patent/US4308820A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7306004A 1973-05-01 1973-05-01 NL7306004A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL7306004A NL7306004A (ja) 1973-05-01 1973-05-01
DE2418830A DE2418830C3 (de) 1973-05-01 1974-04-19 Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Halbleiterschicht aus einer Schmelzlosung
IT21961/74A IT1010136B (it) 1973-05-01 1974-04-26 Metodo e dispositivo per l accre scimento di strati epitassiali da fase liquida
CA198,472A CA1026217A (en) 1973-05-01 1974-04-26 Method of and device for growing epitaxial layers from the liquid phase
GB1843474A GB1452546A (en) 1973-05-01 1974-04-26 Growing epitaxial layers
JP4717274A JPS5337186B2 (ja) 1973-05-01 1974-04-27
CH585174A CH581497A5 (ja) 1973-05-01 1974-04-29
US05/464,790 US3940296A (en) 1973-05-01 1974-04-29 Method for growing epitaxial layers from the liquid phase
FR7415047A FR2228302B1 (ja) 1973-05-01 1974-04-30
AU68410/74A AU488274B2 (en) 1973-05-01 1974-04-30 Method of and device for growing epitaxial layers from the liquid phase
BE143814A BE814426A (nl) 1973-05-01 1974-04-30 Werkwijze en inrichting voor het aangroeien van epitaxiale lagen vanuit de vloeistoffase
US05/762,429 US4308820A (en) 1973-05-01 1977-01-25 Apparatus for epitaxial crystal growth from the liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7306004A NL7306004A (ja) 1973-05-01 1973-05-01

Publications (1)

Publication Number Publication Date
NL7306004A true NL7306004A (ja) 1974-11-05

Family

ID=19818754

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7306004A NL7306004A (ja) 1973-05-01 1973-05-01

Country Status (10)

Country Link
US (2) US3940296A (ja)
JP (1) JPS5337186B2 (ja)
BE (1) BE814426A (ja)
CA (1) CA1026217A (ja)
CH (1) CH581497A5 (ja)
DE (1) DE2418830C3 (ja)
FR (1) FR2228302B1 (ja)
GB (1) GB1452546A (ja)
IT (1) IT1010136B (ja)
NL (1) NL7306004A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248949B2 (ja) * 1974-12-20 1977-12-13
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4026240A (en) * 1975-11-17 1977-05-31 Hewlett-Packard Company Liquid phase epitaxial reactor apparatus
JPS5271369U (ja) * 1976-11-17 1977-05-27
FR2470810A1 (fr) * 1979-12-07 1981-06-12 Labo Electronique Physique Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
FR2476690A1 (fr) * 1980-02-27 1981-08-28 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle
FR2557154A1 (fr) * 1983-12-22 1985-06-28 Rondot Michel Creuset pour epitaxie en phase liquide, a jeu reglable entre substrat et cloisons interbains
NL8403017A (nl) * 1984-10-04 1986-05-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een met mg gedoteerde epitaxiale laag wordt afgezet.
FR2588884B1 (fr) * 1985-10-22 1987-11-27 Labo Electronique Physique Creuset pour l'epitaxie en phase liquide de couches semiconductrices
JPS63118189U (ja) * 1987-01-27 1988-07-30
US5223079A (en) * 1991-03-18 1993-06-29 Motorola, Inc. Forming thin liquid phase epitaxial layers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2516908A (en) * 1945-09-24 1950-08-01 American Can Co Apparatus for lining can ends
US2608177A (en) * 1949-04-25 1952-08-26 Armstrong Cork Co Closure lining machine
US2910041A (en) * 1956-11-29 1959-10-27 Grace W R & Co Gasket applying machine
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
US3747562A (en) * 1971-05-28 1973-07-24 Texas Instruments Inc Sliding furnace boat apparatus
NL190774A (ja) * 1971-06-18
JPS4880275A (ja) * 1972-01-28 1973-10-27
US3785884A (en) * 1972-07-21 1974-01-15 Rca Corp Method for depositing a semiconductor material on the substrate from the liquid phase
US3821039A (en) * 1973-03-22 1974-06-28 Rca Corp Method of epitaxially depositing a semiconductor material on a substrate
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface

Also Published As

Publication number Publication date
AU6841074A (en) 1975-10-30
IT1010136B (it) 1977-01-10
US4308820A (en) 1982-01-05
DE2418830B2 (de) 1979-10-11
FR2228302B1 (ja) 1977-03-04
FR2228302A1 (ja) 1974-11-29
DE2418830A1 (de) 1974-11-21
CA1026217A (en) 1978-02-14
JPS5337186B2 (ja) 1978-10-06
BE814426A (nl) 1974-10-30
CH581497A5 (ja) 1976-11-15
DE2418830C3 (de) 1980-06-26
JPS5028754A (ja) 1975-03-24
US3940296A (en) 1976-02-24
GB1452546A (en) 1976-10-13

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BV The patent application has lapsed