IT1010136B - Metodo e dispositivo per l accre scimento di strati epitassiali da fase liquida - Google Patents

Metodo e dispositivo per l accre scimento di strati epitassiali da fase liquida

Info

Publication number
IT1010136B
IT1010136B IT21961/74A IT2196174A IT1010136B IT 1010136 B IT1010136 B IT 1010136B IT 21961/74 A IT21961/74 A IT 21961/74A IT 2196174 A IT2196174 A IT 2196174A IT 1010136 B IT1010136 B IT 1010136B
Authority
IT
Italy
Prior art keywords
increase
liquid phase
epitaxial layers
epitaxial
layers
Prior art date
Application number
IT21961/74A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1010136B publication Critical patent/IT1010136B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
IT21961/74A 1973-05-01 1974-04-26 Metodo e dispositivo per l accre scimento di strati epitassiali da fase liquida IT1010136B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7306004A NL7306004A (it) 1973-05-01 1973-05-01

Publications (1)

Publication Number Publication Date
IT1010136B true IT1010136B (it) 1977-01-10

Family

ID=19818754

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21961/74A IT1010136B (it) 1973-05-01 1974-04-26 Metodo e dispositivo per l accre scimento di strati epitassiali da fase liquida

Country Status (10)

Country Link
US (2) US3940296A (it)
JP (1) JPS5337186B2 (it)
BE (1) BE814426A (it)
CA (1) CA1026217A (it)
CH (1) CH581497A5 (it)
DE (1) DE2418830C3 (it)
FR (1) FR2228302B1 (it)
GB (1) GB1452546A (it)
IT (1) IT1010136B (it)
NL (1) NL7306004A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
JPS5248949B2 (it) * 1974-12-20 1977-12-13
US4026240A (en) * 1975-11-17 1977-05-31 Hewlett-Packard Company Liquid phase epitaxial reactor apparatus
JPS5271369U (it) * 1976-11-17 1977-05-27
FR2470810A1 (fr) * 1979-12-07 1981-06-12 Labo Electronique Physique Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
FR2476690A1 (fr) * 1980-02-27 1981-08-28 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle
FR2557154A1 (fr) * 1983-12-22 1985-06-28 Rondot Michel Creuset pour epitaxie en phase liquide, a jeu reglable entre substrat et cloisons interbains
NL8403017A (nl) * 1984-10-04 1986-05-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een met mg gedoteerde epitaxiale laag wordt afgezet.
FR2588884B1 (fr) * 1985-10-22 1987-11-27 Labo Electronique Physique Creuset pour l'epitaxie en phase liquide de couches semiconductrices
JPS63118189U (it) * 1987-01-27 1988-07-30
US5223079A (en) * 1991-03-18 1993-06-29 Motorola, Inc. Forming thin liquid phase epitaxial layers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2516908A (en) * 1945-09-24 1950-08-01 American Can Co Apparatus for lining can ends
US2608177A (en) * 1949-04-25 1952-08-26 Armstrong Cork Co Closure lining machine
US2910041A (en) * 1956-11-29 1959-10-27 Grace W R & Co Gasket applying machine
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
US3747562A (en) * 1971-05-28 1973-07-24 Texas Instruments Inc Sliding furnace boat apparatus
NL190774A (it) * 1971-06-18
JPS4880275A (it) * 1972-01-28 1973-10-27
US3785884A (en) * 1972-07-21 1974-01-15 Rca Corp Method for depositing a semiconductor material on the substrate from the liquid phase
US3821039A (en) * 1973-03-22 1974-06-28 Rca Corp Method of epitaxially depositing a semiconductor material on a substrate
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface

Also Published As

Publication number Publication date
US3940296A (en) 1976-02-24
CA1026217A (en) 1978-02-14
DE2418830B2 (de) 1979-10-11
GB1452546A (en) 1976-10-13
FR2228302A1 (it) 1974-11-29
JPS5337186B2 (it) 1978-10-06
CH581497A5 (it) 1976-11-15
FR2228302B1 (it) 1977-03-04
NL7306004A (it) 1974-11-05
US4308820A (en) 1982-01-05
DE2418830A1 (de) 1974-11-21
AU6841074A (en) 1975-10-30
JPS5028754A (it) 1975-03-24
DE2418830C3 (de) 1980-06-26
BE814426A (nl) 1974-10-30

Similar Documents

Publication Publication Date Title
IT967237B (it) Metodo per la deposizione di stra ti semiconduttori epitassiali da fase liquida
BG22371A3 (bg) Метод за окисляване на ди-и триметил-бензол в течна фаза
SE408018B (sv) Vetskeinfusionsanordning for kontinuerlig infusion
ZA746498B (en) Stabilised tretinoin cream emulsion
NL186199C (nl) Vloeibaar-kristalinrichting.
BR7403765D0 (pt) Metodo e dispositivo de medicao
NL7413017A (nl) Aseptisch verzamelen van vloeistof.
NO147280C (no) Anordning for undersoekelse av en jordformasjon
SE407390B (sv) Anordning for storningsfri transport av massgods
NO142505C (no) Fremgangsmaate til fremstilling av en olje-i-vann-emulsjon for parenteral injeksjon
IT950764B (it) Metodo per la deposizione di uno strato semiconduttore epitassia le da fase liquida
IT978597B (it) Metodo ed apparato per l accresci mento epitassiale di materiale semiconduttore da fase liquida
IT1010136B (it) Metodo e dispositivo per l accre scimento di strati epitassiali da fase liquida
BR7306026D0 (pt) Composicao liquida
IT947435B (it) Processo di crescita epitassiale selettiva in fase liquid
IT1013240B (it) Disposicivo per il consolidamento di massicciate ferroviare
IT995486B (it) Procedimento epitassiale in fase liquida
NL7502495A (nl) Vorming van epitaxiale laag uit de vloeibare fase.
IT1014074B (it) Dispositivo per l applicazione dei cursori sulle catene di cerniere lampo
AT332577B (de) Flussigkeitsgekuhlte kokille
IT1025632B (it) Metodo di accrescimento epitassiale da fase liquida
IT1017126B (it) Dispositivo per l regolazione di fase
NL168890C (nl) Werkwijze voor kristalgroei vanuit de vloeibare fase.
IT984197B (it) Procedimento e dispositivo per la preparazione di ghiaia greggia
BE823551A (fr) Modulateur de phase