FR2470810A1 - Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues - Google Patents
Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenuesInfo
- Publication number
- FR2470810A1 FR2470810A1 FR7930103A FR7930103A FR2470810A1 FR 2470810 A1 FR2470810 A1 FR 2470810A1 FR 7930103 A FR7930103 A FR 7930103A FR 7930103 A FR7930103 A FR 7930103A FR 2470810 A1 FR2470810 A1 FR 2470810A1
- Authority
- FR
- France
- Prior art keywords
- liquid phase
- gallium
- epitaxial growth
- structures
- manufacturing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
L'INVENTION CONCERNE UN PROCEDE DE FABRICATION DE STRUCTURES SEMI-CONDUCTRICES, PAR CROISSANCE EPITAXIALE EN PHASE LIQUIDE SUR UN SUBSTRAT, DE COUCHES D'ARSENIURE DE GALLIUM OU D'ARSENIURE DE GALLIUM ET D'ALUMINIUM, DOPEES AU MOYEN D'ELEMENTS TELS QUE LE GERMANIUM, PUIS ENLEVEMENT PAR RACLAGE DE LA DERNIERE SOLUTION DE CROISSANCE, ET ENFIN REFROIDISSEMENT DANS LE FOUR A EPITAXIE DE LA STRUCTURE OBTENUE JUSQU'A LA TEMPERATURE AMBIANTE. L'INVENTION CONCERNE EGALEMENT LES DISPOSITIFS SEMI-CONDUCTEURS OBTENUS PAR LA MISE EN OEUVRE DE CE PROCEDE. L'INVENTION EST REMARQUABLE EN CE QU'AU COURS DU REFROIDISSEMENT, ON MET LA FACE SUPERIEURE DE LADITE STRUCTURE EN CONTACT AVEC UN BAIN DE GALLIUM LIQUIDE, DE MANIERE A DISSOUDRE LES ELEMENTS DOPANTS PRESENTS DANS LES QUELQUES GOUTTES RESTANTES DE LA DERNIERE SOLUTION DE CROISSANCE, NON ENLEVEES PAR LEDIT RACLAGE. APPLICATION: LASERS A HETEROSTRUCTURE, DIODES ELECTROLUMINESCENTES, PHOTOCATHODES SEMI-TRANSPARENTES.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7930103A FR2470810A1 (fr) | 1979-12-07 | 1979-12-07 | Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues |
CA000365934A CA1155974A (fr) | 1979-12-07 | 1980-12-02 | Methode de croissance epistaxiale a partir d'un bain de gallium |
GB8038730A GB2064977B (en) | 1979-12-07 | 1980-12-03 | Method of manufacturing semiconductor structures by liquid phase epitaxy |
DE19803045484 DE3045484A1 (de) | 1979-12-07 | 1980-12-03 | Verfahren zur herstellung von halbleiterstrukturen durch epitaktisches anwachsen aus der fluessigkeitsphase und durch dieses verfahren erhaltene strukturen |
JP55171946A JPS6052578B2 (ja) | 1979-12-07 | 1980-12-05 | 半導体装置の製造方法 |
US06/213,982 US4366009A (en) | 1979-12-07 | 1980-12-08 | Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7930103A FR2470810A1 (fr) | 1979-12-07 | 1979-12-07 | Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2470810A1 true FR2470810A1 (fr) | 1981-06-12 |
FR2470810B1 FR2470810B1 (fr) | 1985-02-01 |
Family
ID=9232523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7930103A Granted FR2470810A1 (fr) | 1979-12-07 | 1979-12-07 | Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues |
Country Status (6)
Country | Link |
---|---|
US (1) | US4366009A (fr) |
JP (1) | JPS6052578B2 (fr) |
CA (1) | CA1155974A (fr) |
DE (1) | DE3045484A1 (fr) |
FR (1) | FR2470810A1 (fr) |
GB (1) | GB2064977B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991015361A1 (fr) * | 1990-03-30 | 1991-10-17 | Institutul De Fizica Atomica | Procede d'obtention de surfaces planes en arseniure de gallium |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2195069A1 (fr) * | 1972-07-28 | 1974-03-01 | Matsushita Electronics Corp |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE754519A (fr) * | 1969-08-06 | 1971-02-08 | Motorola Inc | Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs |
JPS53271B1 (fr) * | 1971-03-05 | 1978-01-06 | ||
NL7306004A (fr) * | 1973-05-01 | 1974-11-05 | ||
JPS5329508B2 (fr) * | 1974-03-27 | 1978-08-21 | ||
JPS5248949B2 (fr) * | 1974-12-20 | 1977-12-13 | ||
US4028148A (en) * | 1974-12-20 | 1977-06-07 | Nippon Telegraph And Telephone Public Corporation | Method of epitaxially growing a laminate semiconductor layer in liquid phase |
US3950195A (en) * | 1975-02-21 | 1976-04-13 | Bell Telephone Laboratories, Incorporated | Lpe technique for reducing edge growth |
US4008106A (en) * | 1975-11-13 | 1977-02-15 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating III-V photocathodes |
US4178195A (en) * | 1976-11-22 | 1979-12-11 | International Business Machines Corporation | Semiconductor structure |
-
1979
- 1979-12-07 FR FR7930103A patent/FR2470810A1/fr active Granted
-
1980
- 1980-12-02 CA CA000365934A patent/CA1155974A/fr not_active Expired
- 1980-12-03 GB GB8038730A patent/GB2064977B/en not_active Expired
- 1980-12-03 DE DE19803045484 patent/DE3045484A1/de active Granted
- 1980-12-05 JP JP55171946A patent/JPS6052578B2/ja not_active Expired
- 1980-12-08 US US06/213,982 patent/US4366009A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2195069A1 (fr) * | 1972-07-28 | 1974-03-01 | Matsushita Electronics Corp |
Non-Patent Citations (1)
Title |
---|
EXBK/72 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991015361A1 (fr) * | 1990-03-30 | 1991-10-17 | Institutul De Fizica Atomica | Procede d'obtention de surfaces planes en arseniure de gallium |
Also Published As
Publication number | Publication date |
---|---|
DE3045484C2 (fr) | 1988-02-18 |
FR2470810B1 (fr) | 1985-02-01 |
JPS5694623A (en) | 1981-07-31 |
US4366009A (en) | 1982-12-28 |
CA1155974A (fr) | 1983-10-25 |
GB2064977B (en) | 1983-10-19 |
GB2064977A (en) | 1981-06-24 |
DE3045484A1 (de) | 1981-09-17 |
JPS6052578B2 (ja) | 1985-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licences | ||
ST | Notification of lapse |