IT950764B - Metodo per la deposizione di uno strato semiconduttore epitassia le da fase liquida - Google Patents

Metodo per la deposizione di uno strato semiconduttore epitassia le da fase liquida

Info

Publication number
IT950764B
IT950764B IT22390/72A IT2239072A IT950764B IT 950764 B IT950764 B IT 950764B IT 22390/72 A IT22390/72 A IT 22390/72A IT 2239072 A IT2239072 A IT 2239072A IT 950764 B IT950764 B IT 950764B
Authority
IT
Italy
Prior art keywords
epitaxia
deposition
semiconductor layer
liquid phase
phase
Prior art date
Application number
IT22390/72A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT950764B publication Critical patent/IT950764B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT22390/72A 1971-07-08 1972-03-25 Metodo per la deposizione di uno strato semiconduttore epitassia le da fase liquida IT950764B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16060871A 1971-07-08 1971-07-08

Publications (1)

Publication Number Publication Date
IT950764B true IT950764B (it) 1973-06-20

Family

ID=22577589

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22390/72A IT950764B (it) 1971-07-08 1972-03-25 Metodo per la deposizione di uno strato semiconduttore epitassia le da fase liquida

Country Status (6)

Country Link
US (1) US3741825A (it)
CA (1) CA968674A (it)
DE (1) DE2215355C3 (it)
FR (1) FR2144645B1 (it)
GB (1) GB1371537A (it)
IT (1) IT950764B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
JPS5213510B2 (it) * 1973-02-26 1977-04-14
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US3891478A (en) * 1973-08-16 1975-06-24 Rca Corp Deposition of epitaxial layer from the liquid phase
JPS5346594B2 (it) * 1974-02-18 1978-12-14
US3890194A (en) * 1974-04-11 1975-06-17 Rca Corp Method for depositing on a substrate a plurality of epitaxial layers in succession
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
IT1055104B (it) * 1975-02-07 1981-12-21 Philips Nv Metodo di fabbricazione di dispositivi semiconduttori comportante la formazione di uno strato di materiale semiconduuttore su di un substrato apparato per l'attuazione di tale metodo e dispositivo semiconduttore fabbricato con l'ausilio di detto metodo
US3950195A (en) * 1975-02-21 1976-04-13 Bell Telephone Laboratories, Incorporated Lpe technique for reducing edge growth
JPS51131270A (en) * 1975-05-09 1976-11-15 Matsushita Electric Ind Co Ltd Semi-conductor manufacturing unit
JPS52109866A (en) * 1976-03-11 1977-09-14 Oki Electric Ind Co Ltd Liquid epitaxial growing method
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
US4470368A (en) * 1982-03-10 1984-09-11 At&T Bell Laboratories LPE Apparatus with improved thermal geometry
GB2121828B (en) * 1982-06-14 1985-12-11 Philips Electronic Associated Method of casting charges for use in a liquid phase epitaxy growth process
US4569054A (en) * 1983-06-17 1986-02-04 Rca Corporation Double heterostructure laser
US4642143A (en) * 1983-06-17 1987-02-10 Rca Corporation Method of making a double heterostructure laser
US4547396A (en) * 1983-06-17 1985-10-15 Rca Corporation Method of making a laser array

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
DE1946049C3 (de) * 1969-09-11 1979-02-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zur Flüssigphasenepitaxie

Also Published As

Publication number Publication date
FR2144645A1 (it) 1973-02-16
US3741825A (en) 1973-06-26
DE2215355C3 (de) 1986-04-17
DE2215355A1 (de) 1973-01-18
GB1371537A (en) 1974-10-23
FR2144645B1 (it) 1977-12-23
CA968674A (en) 1975-06-03
DE2215355B2 (de) 1980-06-26

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