JPS5248949B2 - - Google Patents

Info

Publication number
JPS5248949B2
JPS5248949B2 JP49145599A JP14559974A JPS5248949B2 JP S5248949 B2 JPS5248949 B2 JP S5248949B2 JP 49145599 A JP49145599 A JP 49145599A JP 14559974 A JP14559974 A JP 14559974A JP S5248949 B2 JPS5248949 B2 JP S5248949B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49145599A
Other versions
JPS5171882A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49145599A priority Critical patent/JPS5248949B2/ja
Priority to US05/639,713 priority patent/US4013040A/en
Priority to DE2556928A priority patent/DE2556928C3/de
Priority to GB51670/75A priority patent/GB1495310A/en
Priority to CA242,234A priority patent/CA1036272A/en
Priority to NL7514816.A priority patent/NL166074C/xx
Priority to FR7539047A priority patent/FR2295565A1/fr
Publication of JPS5171882A publication Critical patent/JPS5171882A/ja
Priority to US05/715,844 priority patent/US4028148A/en
Publication of JPS5248949B2 publication Critical patent/JPS5248949B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP49145599A 1974-12-20 1974-12-20 Expired JPS5248949B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP49145599A JPS5248949B2 (ja) 1974-12-20 1974-12-20
US05/639,713 US4013040A (en) 1974-12-20 1975-12-11 Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase
DE2556928A DE2556928C3 (de) 1974-12-20 1975-12-17 Verfahren und Vorrichtung zum Züchten einer epitaktischen Halbleiterschicht in flüssiger Phase
GB51670/75A GB1495310A (en) 1974-12-20 1975-12-17 Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus of the same
CA242,234A CA1036272A (en) 1974-12-20 1975-12-18 Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same
NL7514816.A NL166074C (nl) 1974-12-20 1975-12-19 Inrichting voor het epitaxiaal uit vloeibare toestand neerslaan van meerdere halfgeleiderlaagjes op een substraat.
FR7539047A FR2295565A1 (fr) 1974-12-20 1975-12-19 Procede pour faire croitre de facon epitaxiale, en phase liquide, une couche semi-conductrice stratifiee et appareil pour mettre en oeuvre ce procede
US05/715,844 US4028148A (en) 1974-12-20 1976-08-19 Method of epitaxially growing a laminate semiconductor layer in liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49145599A JPS5248949B2 (ja) 1974-12-20 1974-12-20

Publications (2)

Publication Number Publication Date
JPS5171882A JPS5171882A (ja) 1976-06-22
JPS5248949B2 true JPS5248949B2 (ja) 1977-12-13

Family

ID=15388776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49145599A Expired JPS5248949B2 (ja) 1974-12-20 1974-12-20

Country Status (7)

Country Link
US (1) US4013040A (ja)
JP (1) JPS5248949B2 (ja)
CA (1) CA1036272A (ja)
DE (1) DE2556928C3 (ja)
FR (1) FR2295565A1 (ja)
GB (1) GB1495310A (ja)
NL (1) NL166074C (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129882A (en) * 1975-05-07 1976-11-11 Nippon Telegr & Teleph Corp <Ntt> Process for liquid phase epitaxial growth
JPS5556625A (en) * 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Semiconductor crystal growing device
FR2470810A1 (fr) * 1979-12-07 1981-06-12 Labo Electronique Physique Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
FR2476690A1 (fr) * 1980-02-27 1981-08-28 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
DE3345214A1 (de) * 1983-12-14 1985-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode
DE3427056A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus
DE102021123241A1 (de) * 2021-09-08 2023-03-09 Tdk Electronics Ag Verfahren zum Aufbringen einer Beschichtung auf mindestens ein elektronisches Bauteil und Sensoranordnung mit einer Beschichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US3821039A (en) * 1973-03-22 1974-06-28 Rca Corp Method of epitaxially depositing a semiconductor material on a substrate
NL7306004A (ja) * 1973-05-01 1974-11-05

Also Published As

Publication number Publication date
DE2556928C3 (de) 1979-02-22
FR2295565A1 (fr) 1976-07-16
CA1036272A (en) 1978-08-08
NL7514816A (nl) 1976-06-22
GB1495310A (en) 1977-12-14
NL166074B (nl) 1981-01-15
DE2556928A1 (de) 1976-06-24
DE2556928B2 (de) 1978-06-22
US4013040A (en) 1977-03-22
NL166074C (nl) 1981-06-15
FR2295565B1 (ja) 1978-05-19
JPS5171882A (ja) 1976-06-22

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