BRPI0814930A2 - Método de solidificação de silício metálico - Google Patents

Método de solidificação de silício metálico

Info

Publication number
BRPI0814930A2
BRPI0814930A2 BRPI0814930-5A2A BRPI0814930A BRPI0814930A2 BR PI0814930 A2 BRPI0814930 A2 BR PI0814930A2 BR PI0814930 A BRPI0814930 A BR PI0814930A BR PI0814930 A2 BRPI0814930 A2 BR PI0814930A2
Authority
BR
Brazil
Prior art keywords
silicy
metal
solidification method
solidification
silicy solidification
Prior art date
Application number
BRPI0814930-5A2A
Other languages
English (en)
Inventor
Motoyuki Yamada
Kazuhisa Hatayama
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of BRPI0814930A2 publication Critical patent/BRPI0814930A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
BRPI0814930-5A2A 2007-06-08 2008-06-06 Método de solidificação de silício metálico BRPI0814930A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007152294 2007-06-08
PCT/JP2008/060472 WO2008149985A1 (ja) 2007-06-08 2008-06-06 金属珪素の凝固方法

Publications (1)

Publication Number Publication Date
BRPI0814930A2 true BRPI0814930A2 (pt) 2015-02-03

Family

ID=40093789

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0814930-5A2A BRPI0814930A2 (pt) 2007-06-08 2008-06-06 Método de solidificação de silício metálico

Country Status (9)

Country Link
US (1) US20100178195A1 (pt)
EP (1) EP2172424A4 (pt)
JP (1) JPWO2008149985A1 (pt)
KR (1) KR20100022516A (pt)
CN (1) CN101778795A (pt)
AU (1) AU2008260891A1 (pt)
BR (1) BRPI0814930A2 (pt)
CA (1) CA2689603A1 (pt)
WO (1) WO2008149985A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010119502A1 (ja) * 2009-04-14 2010-10-21 信越化学工業株式会社 金属珪素の精製方法
TWI393805B (zh) 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
EP2507170A1 (en) * 2009-12-01 2012-10-10 Dow Corning Corporation Rotational casting process
TWI397617B (zh) * 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
TWI403461B (zh) 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
DE102011004753A1 (de) * 2011-02-25 2012-08-30 Evonik Degussa Gmbh Verfahren zum Aufreinigen von Silicium
CN102659110B (zh) * 2012-04-19 2014-03-19 厦门大学 一种采用硅铁合金定向凝固提纯多晶硅的方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193974A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for producing refined metallurgical silicon ribbon
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
US4195067A (en) * 1977-11-21 1980-03-25 Union Carbide Corporation Process for the production of refined metallurgical silicon
US4193975A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
US4247528A (en) * 1979-04-11 1981-01-27 Dow Corning Corporation Method for producing solar-cell-grade silicon
US4457902A (en) * 1980-10-24 1984-07-03 Watson Keith R High efficiency hydrocarbon reduction of silica
US4612179A (en) * 1985-03-13 1986-09-16 Sri International Process for purification of solid silicon
US5009703A (en) * 1990-08-13 1991-04-23 Dow Corning Corporation Silicon smelting process in direct current furnace
JP3247842B2 (ja) 1996-10-14 2002-01-21 川崎製鉄株式会社 太陽電池用シリコンの鋳造方法
JPH10182134A (ja) * 1996-10-31 1998-07-07 Kawasaki Steel Corp シリコンの精製方法
JPH10182137A (ja) * 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
JPH10236815A (ja) * 1997-02-28 1998-09-08 Kawasaki Steel Corp 太陽電池用シリコンの製造方法
JP3497355B2 (ja) * 1997-10-06 2004-02-16 信越フィルム株式会社 シリコンの精製方法
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
WO2005123583A1 (ja) * 2004-06-22 2005-12-29 Shin-Etsu Film Co., Ltd. 多結晶シリコンの製造方法およびその製造方法によって製造される太陽電池用多結晶シリコン
JP4115432B2 (ja) * 2004-07-14 2008-07-09 シャープ株式会社 金属の精製方法
JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法
US8173094B2 (en) * 2005-12-27 2012-05-08 Sumitomo Chemical Company, Limited Method for producing polycrystalline silicon
CN101473055B (zh) * 2006-07-06 2012-10-10 洛特斯合金有限公司 多孔体的制造方法
EP2058279A4 (en) * 2006-08-31 2012-01-25 Mitsubishi Materials Corp METAL SILICON AND METHOD FOR MANUFACTURING THE SAME
CN101511731B (zh) * 2006-09-14 2012-02-22 希利贝坎库公司 用于提纯低级硅材料的方法和装置
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
JP2008115040A (ja) * 2006-11-02 2008-05-22 Sharp Corp シリコン再生装置、シリコン再生方法
MX2010002728A (es) * 2007-09-13 2010-08-02 Silicium Becancour Inc Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico.

Also Published As

Publication number Publication date
EP2172424A1 (en) 2010-04-07
CA2689603A1 (en) 2008-12-11
KR20100022516A (ko) 2010-03-02
JPWO2008149985A1 (ja) 2010-08-26
US20100178195A1 (en) 2010-07-15
AU2008260891A1 (en) 2008-12-11
EP2172424A4 (en) 2012-03-07
CN101778795A (zh) 2010-07-14
WO2008149985A1 (ja) 2008-12-11

Similar Documents

Publication Publication Date Title
BRPI0814359A2 (pt) Método
BRPI0817226A2 (pt) Método
BRPI0817726A2 (pt) Método
DE112008003601A5 (de) AI-Gusslegierungen
BRPI0919116A2 (pt) método
BRPI0816314A2 (pt) Método de conversão
BRPI0719783A2 (pt) Estrutura de metal vertical
BR112012004593A2 (pt) "método"
DK2313489T3 (da) Fremstillingsmetode
BRPI0817667A2 (pt) Método de marcação
BRPI0816315A2 (pt) Método de conversão
FI20065363A0 (fi) Erotusmenetelmä
BRPI0814930A2 (pt) Método de solidificação de silício metálico
BRPI0810416A2 (pt) Método de hidroformação
BRPI0916597A2 (pt) Método
BRPI0915796A2 (pt) método de pagamento eletrônico
BRPI0817780A2 (pt) Vedação de metal soldada
BRPI0915125A2 (pt) método de seleção ii
BRPI0820295A2 (pt) Perfil de metal
BRPI0922497A2 (pt) aparelho para a fusão de metal
BRPI0816674A2 (pt) Purificação de metais
BRPI0920524A2 (pt) método de purificação
BRPI0908744A2 (pt) Ferramenta fundida compósita
TH100575B (th) อุปกรณ์หล่อโลหะ
TH95681B (th) หน้าตัดโลหะ

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired