BRPI0412198A - célula solar emissora encapsulada (ewt) e método para produzir a mesma - Google Patents

célula solar emissora encapsulada (ewt) e método para produzir a mesma

Info

Publication number
BRPI0412198A
BRPI0412198A BRPI0412198-8A BRPI0412198A BRPI0412198A BR PI0412198 A BRPI0412198 A BR PI0412198A BR PI0412198 A BRPI0412198 A BR PI0412198A BR PI0412198 A BRPI0412198 A BR PI0412198A
Authority
BR
Brazil
Prior art keywords
solar cell
cell
substrate
ewt
thin
Prior art date
Application number
BRPI0412198-8A
Other languages
English (en)
Inventor
Russell R Schmit
James M Gee
Original Assignee
Advent Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advent Solar Inc filed Critical Advent Solar Inc
Publication of BRPI0412198A publication Critical patent/BRPI0412198A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

"CéLULA SOLAR EMISSORA ENCAPSULADA (EWT) E MéTODO PARA PRODUZIR A MESMA". Uma célula solar de enrolar emissora fina e método de produzir uma célula solar de enrolar emissora fina são descritos. A célula de preferência inclui um substrato de pastilha de silício tendo uma espessura de menos que 280 mícrons. A área tipo p no lado traseiro da célula é minimizada, a qual maximiza a área coletora e reduz ou elimina tensão devido a passivação da área tipo p, a qual é exigida para células solares convencionais. A eficácia da célula da presente invenção tende para uma espessura muito menor do que aquela para células convencionais. Desse modo, pastilhas finas de silício de pouca qualidade, baratas podem ser usadas sem uma penalidade significante na eficácia, fornecendo uma grande vantagem no custo sobre outras configurações de célula solar. Vias através do substrato, as quais conectam camadas emissoras nas superfícies dianteira e traseira do substrato, podem consistir de furos os quais são dopados, ou alternativamente podem ser canais dopados sólidos formados pela migração de um solvente, o qual de preferência contém um dopante, provocado por um processo movido à gradiente.
BRPI0412198-8A 2003-06-30 2004-06-30 célula solar emissora encapsulada (ewt) e método para produzir a mesma BRPI0412198A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48412203P 2003-06-30 2003-06-30
US10/880,190 US7649141B2 (en) 2003-06-30 2004-06-29 Emitter wrap-through back contact solar cells on thin silicon wafers
PCT/US2004/021219 WO2005006402A2 (en) 2003-06-30 2004-06-30 Emitter wrap-through back contact solar cells on thin silicon wafers

Publications (1)

Publication Number Publication Date
BRPI0412198A true BRPI0412198A (pt) 2006-08-22

Family

ID=33544725

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0412198-8A BRPI0412198A (pt) 2003-06-30 2004-06-30 célula solar emissora encapsulada (ewt) e método para produzir a mesma

Country Status (7)

Country Link
US (1) US7649141B2 (pt)
EP (1) EP1649522A4 (pt)
JP (1) JP2007525014A (pt)
KR (1) KR20060035657A (pt)
BR (1) BRPI0412198A (pt)
CA (1) CA2530684A1 (pt)
WO (1) WO2005006402A2 (pt)

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US7649141B2 (en) 2010-01-19
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