BR9916497A - Aglomeração de pós de silìcio - Google Patents
Aglomeração de pós de silìcioInfo
- Publication number
- BR9916497A BR9916497A BR9916497-3A BR9916497A BR9916497A BR 9916497 A BR9916497 A BR 9916497A BR 9916497 A BR9916497 A BR 9916497A BR 9916497 A BR9916497 A BR 9916497A
- Authority
- BR
- Brazil
- Prior art keywords
- silicon
- granulate
- monocrystals
- agglomeration
- powders
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glanulating (AREA)
Abstract
Patente de Invenção: <B>"AGLOMERAçãO DE PóS DE SILìCIO"<D>. De acordo com um método para aglomeração de pós de silício, o pó de silício é aquecido a uma temperatura de pelo menos 250°C, de preferência 1200 a 1500°C usando o efeito de radiação de microondas na faixa de comprimento de onda de 0,5 kHz a 300 GHZ. Pó de silício fino com um tamanho de partícula de menos que 100Ám é preferivelmente usado como o material de partida. Agentes de dopagem contendo metal e/ou boro, fósforo, arsênio ou antimónio podem ser adicionados ao pó de silício antes ou depois do tratamento de microondas. O granulado resultante é opcionalmente quebrado, moído e peneirado. A invenção também refere-se a um granulado de silício, que pode ser produzido por este método. Esse granulado, de preferência tem uma porosidade de 0 a 80% e fases estranhas ou precipitados na adjacência do grão dos monocristais. O granulado de silício da invenção pode ser usado na produção de monocristais de silício ou blocos de silício multicristalinos, ou para reação com cloreto de hidrogênio ou hidrocarbonetos halogenados em leitos fluidificados ou fornalhas de eixo mecânico.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19859288A DE19859288A1 (de) | 1998-12-22 | 1998-12-22 | Agglomeration von Siliciumpulvern |
PCT/EP1999/009694 WO2000037719A1 (de) | 1998-12-22 | 1999-12-09 | Agglomeration von siliciumpulvern |
Publications (1)
Publication Number | Publication Date |
---|---|
BR9916497A true BR9916497A (pt) | 2001-10-09 |
Family
ID=7892132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR9916497-3A BR9916497A (pt) | 1998-12-22 | 1999-12-09 | Aglomeração de pós de silìcio |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP1144736B1 (pt) |
JP (1) | JP2002533289A (pt) |
AT (1) | ATE274610T1 (pt) |
AU (1) | AU2095800A (pt) |
BR (1) | BR9916497A (pt) |
CA (1) | CA2355862A1 (pt) |
DE (2) | DE19859288A1 (pt) |
NO (1) | NO20013091D0 (pt) |
WO (1) | WO2000037719A1 (pt) |
ZA (1) | ZA200104768B (pt) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2832253B1 (fr) * | 2001-11-12 | 2005-05-27 | Michelis Quiriconi Raymond De | Cellule solaire a base de (se) (si) iridium appauvri |
US7175685B1 (en) | 2002-04-15 | 2007-02-13 | Gt Solar Incorporated | Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications |
US8405183B2 (en) | 2003-04-14 | 2013-03-26 | S'Tile Pole des Eco-Industries | Semiconductor structure |
FR2853562B1 (fr) * | 2003-04-14 | 2006-08-11 | Centre Nat Rech Scient | Procede de fabrication de granules semiconducteurs |
US8192648B2 (en) | 2003-04-14 | 2012-06-05 | S'tile | Method for forming a sintered semiconductor material |
US9741881B2 (en) | 2003-04-14 | 2017-08-22 | S'tile | Photovoltaic module including integrated photovoltaic cells |
US9493358B2 (en) | 2003-04-14 | 2016-11-15 | Stile | Photovoltaic module including integrated photovoltaic cells |
JP4869061B2 (ja) | 2003-04-14 | 2012-02-01 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | 焼結された半導体材料 |
DE102004027563A1 (de) * | 2004-06-04 | 2005-12-22 | Joint Solar Silicon Gmbh & Co. Kg | Silizium sowie Verfahren zu dessen Herstellung |
TW200914371A (en) * | 2007-06-01 | 2009-04-01 | Gt Solar Inc | Processing of fine silicon powder to produce bulk silicon |
AP2959A (en) * | 2007-10-04 | 2014-08-31 | Huntsman Corp Australia Pty Ltd | Compositions and methods for coagulating silica from mineral processing streams |
DE102007050010A1 (de) * | 2007-10-17 | 2009-06-25 | Jan-Philipp Mai | Verfahren und Vorrichtung zur Herstellung von Silizium |
DE112009000068T5 (de) | 2008-06-24 | 2011-04-21 | JIANGXI SAI WEI LDK SOLAR HI-TECH Co., Ltd., Xinyu | Verfahren zur Verwendung von Siliziumpulver und Silizium-Blöcken als Rohmaterial mit guter Füllleistung in Einkristall- oder Polykristall-Öfen |
DE102008036143A1 (de) | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
DE102009035041B3 (de) * | 2009-07-28 | 2011-01-05 | Sunicon Ag | Anlage zur Herstellung von Silizium-Granulat |
KR101854731B1 (ko) * | 2011-07-28 | 2018-05-04 | 엘지이노텍 주식회사 | 잉곳 제조 방법 |
JP5178939B1 (ja) * | 2012-07-11 | 2013-04-10 | 和宏 永田 | マイクロ波によるシリコンの製造方法及びマイクロ波還元炉 |
DE102012018548B4 (de) * | 2012-09-20 | 2016-11-17 | Technische Universität Bergakademie Freiberg | Verfahren zur Verwertung von ausgedienten Solarmodulen und Solarzellen aus Silizium und siliziumhaltigen Bauelementen |
RU2545272C1 (ru) * | 2013-09-25 | 2015-03-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Уфимский государственный нефтяной технический университет" | Способ получения гранул из хвостов обогащения |
DE102016104979A1 (de) * | 2016-03-17 | 2017-09-21 | Jpm Silicon Gmbh | Verfahren zum Aufschmelzen und Reinigen von Metallen, insbesondere Metallabfällen |
NO345463B1 (en) * | 2017-04-06 | 2021-02-15 | Elkem Materials | Silicon powder for use in anodes for lithium-ion batteries and method for production of silicon powder |
CN112846197A (zh) * | 2021-01-05 | 2021-05-28 | 北京科技大学 | 一种提高3d打印金属粉体激光吸收率的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL95386C (pt) * | 1954-02-24 | |||
DE3518829A1 (de) * | 1985-05-24 | 1986-11-27 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen |
JP3342898B2 (ja) * | 1991-11-26 | 2002-11-11 | 株式会社東芝 | 硅素焼結体およびこれを用いて形成したウェハ保持用ボード、スパッタリングターゲットおよびシリコンウェハ |
JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
DE19515342A1 (de) * | 1995-04-26 | 1996-10-31 | Widia Gmbh | Verfahren, Vorrichtung zur thermischen Behandlung von Stoffen in einem Mikrowellenofen und Verwendung dieses Verfahrens und dieser Vorrichtung |
-
1998
- 1998-12-22 DE DE19859288A patent/DE19859288A1/de not_active Withdrawn
-
1999
- 1999-12-09 WO PCT/EP1999/009694 patent/WO2000037719A1/de active IP Right Grant
- 1999-12-09 DE DE59910364T patent/DE59910364D1/de not_active Expired - Fee Related
- 1999-12-09 JP JP2000589766A patent/JP2002533289A/ja active Pending
- 1999-12-09 AU AU20958/00A patent/AU2095800A/en not_active Abandoned
- 1999-12-09 BR BR9916497-3A patent/BR9916497A/pt not_active IP Right Cessation
- 1999-12-09 EP EP99965444A patent/EP1144736B1/de not_active Expired - Lifetime
- 1999-12-09 CA CA002355862A patent/CA2355862A1/en not_active Abandoned
- 1999-12-09 AT AT99965444T patent/ATE274610T1/de not_active IP Right Cessation
-
2001
- 2001-06-12 ZA ZA200104768A patent/ZA200104768B/en unknown
- 2001-06-21 NO NO20013091A patent/NO20013091D0/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NO20013091L (no) | 2001-06-21 |
CA2355862A1 (en) | 2000-06-29 |
ATE274610T1 (de) | 2004-09-15 |
DE19859288A1 (de) | 2000-06-29 |
WO2000037719A1 (de) | 2000-06-29 |
NO20013091D0 (no) | 2001-06-21 |
AU2095800A (en) | 2000-07-12 |
ZA200104768B (en) | 2002-05-14 |
EP1144736A1 (de) | 2001-10-17 |
EP1144736B1 (de) | 2004-08-25 |
DE59910364D1 (de) | 2004-09-30 |
JP2002533289A (ja) | 2002-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: REFERENTE AO DESPACHO PUBLICADO NA RPI 1937 DE 19/02/2008 |