BR7702975A - Processo de fabricacao de,no minimo,um diodo ou tiristor pela adaptacao da carga de recuperacao de,no minimo,um original de um diodo de juncao ou um corpo semicondutor de tiristor - Google Patents
Processo de fabricacao de,no minimo,um diodo ou tiristor pela adaptacao da carga de recuperacao de,no minimo,um original de um diodo de juncao ou um corpo semicondutor de tiristorInfo
- Publication number
- BR7702975A BR7702975A BR7702975A BR7702975A BR7702975A BR 7702975 A BR7702975 A BR 7702975A BR 7702975 A BR7702975 A BR 7702975A BR 7702975 A BR7702975 A BR 7702975A BR 7702975 A BR7702975 A BR 7702975A
- Authority
- BR
- Brazil
- Prior art keywords
- thyristor
- diode
- adapting
- originating
- manufacturing process
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/687,278 US4075037A (en) | 1976-05-17 | 1976-05-17 | Tailoring of recovery charge in power diodes and thyristors by irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR7702975A true BR7702975A (pt) | 1978-04-04 |
Family
ID=24759797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR7702975A BR7702975A (pt) | 1976-05-17 | 1977-05-09 | Processo de fabricacao de,no minimo,um diodo ou tiristor pela adaptacao da carga de recuperacao de,no minimo,um original de um diodo de juncao ou um corpo semicondutor de tiristor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4075037A (https=) |
| JP (1) | JPS5448487A (https=) |
| BE (1) | BE853880A (https=) |
| BR (1) | BR7702975A (https=) |
| CA (1) | CA1085963A (https=) |
| DE (1) | DE2721912A1 (https=) |
| FR (1) | FR2361743A1 (https=) |
| GB (1) | GB1578258A (https=) |
| IN (1) | IN147814B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4230791A (en) * | 1979-04-02 | 1980-10-28 | General Electric Company | Control of valley current in a unijunction transistor by electron irradiation |
| IN152079B (https=) * | 1980-01-09 | 1983-10-08 | Westinghouse Electric Corp | |
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| IN153170B (https=) * | 1980-07-24 | 1984-06-09 | Westinghouse Electric Corp | |
| IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
| US6107106A (en) * | 1998-02-05 | 2000-08-22 | Sony Corporation | Localized control of integrated circuit parameters using focus ion beam irradiation |
| KR101753740B1 (ko) | 2009-04-28 | 2017-07-04 | 삼성전자주식회사 | 광학 재료, 광학 부품 및 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
| US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
| US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
-
1976
- 1976-05-17 US US05/687,278 patent/US4075037A/en not_active Expired - Lifetime
-
1977
- 1977-04-07 IN IN526/CAL/77A patent/IN147814B/en unknown
- 1977-04-20 CA CA276,540A patent/CA1085963A/en not_active Expired
- 1977-04-22 BE BE176950A patent/BE853880A/xx not_active IP Right Cessation
- 1977-05-09 BR BR7702975A patent/BR7702975A/pt unknown
- 1977-05-10 GB GB19517/77A patent/GB1578258A/en not_active Expired
- 1977-05-14 DE DE19772721912 patent/DE2721912A1/de not_active Withdrawn
- 1977-05-16 FR FR7714925A patent/FR2361743A1/fr active Granted
- 1977-05-17 JP JP5604277A patent/JPS5448487A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1085963A (en) | 1980-09-16 |
| BE853880A (fr) | 1977-10-24 |
| IN147814B (https=) | 1980-07-05 |
| GB1578258A (en) | 1980-11-05 |
| FR2361743A1 (fr) | 1978-03-10 |
| DE2721912A1 (de) | 1977-12-01 |
| FR2361743B1 (https=) | 1984-08-10 |
| JPS5448487A (en) | 1979-04-17 |
| JPS5741107B2 (https=) | 1982-09-01 |
| US4075037A (en) | 1978-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE385547B (sv) | Sett att framstella en halvledarkropp enligt krav 1 i svenska patentet 367 893 innefattande successivt, odlade epitaxiala omraden pa en halvledaryta | |
| NL190710C (nl) | Geintegreerde halfgeleiderketen. | |
| BR7501870A (pt) | Dispositivo semicondutor, processo para a fabricacao de um dispositivo semicondutor | |
| DE3577912D1 (de) | Interferometrische methoden fuer die fabrikation von halbleitervorrichtungen. | |
| NL190298B (nl) | Halfgeleiderinrichting met extra gebied. | |
| IT7926806A0 (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori. | |
| IT7922195A0 (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori. | |
| DE3888560D1 (de) | Halbleiteranordnung mit einem Thyristor. | |
| DE3280111D1 (de) | Halbleiter-gleichrichterdiode. | |
| BR7702975A (pt) | Processo de fabricacao de,no minimo,um diodo ou tiristor pela adaptacao da carga de recuperacao de,no minimo,um original de um diodo de juncao ou um corpo semicondutor de tiristor | |
| JPS5224465A (en) | Schottky barrier semiconductor device | |
| JPS5345978A (en) | Insulated-gate-protective semiconductor device | |
| BR7906725A (pt) | Comutador semicondutor fotoativado | |
| BR7704739A (pt) | Componente semicondutor,com camada de protecao passivada | |
| JPS53139460A (en) | Semiconductor switching device | |
| JPS5242384A (en) | Semiconductor device | |
| BR7703967A (pt) | Estrutura de semicondutor que tem a funcao de diodo | |
| JPS538570A (en) | Semiconductor device | |
| JPS5415674A (en) | Semiconductor device containing schottky barrier | |
| JPS5433665A (en) | Manufacture for resin sealed type semiconductor device and resin sealed metal mold | |
| SE7604827L (sv) | Forfarande for framstellning av en halvledare jemte halvledare framstelld enligt detta forfarande | |
| SU456437A3 (ru) | Полупроводниковое устройство | |
| PL198972A1 (pl) | Sposob wytwarzania przyrzadu polprzewodnikowego,zwlaszcza tyrystora | |
| SU452744A2 (ru) | Радиатор дл охлаждени полупроводниковых приборов | |
| JPS5232686A (en) | Semiconductor composite device |