FR2361743A1 - Adaptation de la charge de recuperation dans des thyristors et des diodes de puissance par irradiation - Google Patents

Adaptation de la charge de recuperation dans des thyristors et des diodes de puissance par irradiation

Info

Publication number
FR2361743A1
FR2361743A1 FR7714925A FR7714925A FR2361743A1 FR 2361743 A1 FR2361743 A1 FR 2361743A1 FR 7714925 A FR7714925 A FR 7714925A FR 7714925 A FR7714925 A FR 7714925A FR 2361743 A1 FR2361743 A1 FR 2361743A1
Authority
FR
France
Prior art keywords
recovery charge
irradiation
thyristors
power diodes
adaptation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7714925A
Other languages
English (en)
French (fr)
Other versions
FR2361743B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2361743A1 publication Critical patent/FR2361743A1/fr
Application granted granted Critical
Publication of FR2361743B1 publication Critical patent/FR2361743B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation

Landscapes

  • Thyristors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR7714925A 1976-05-17 1977-05-16 Adaptation de la charge de recuperation dans des thyristors et des diodes de puissance par irradiation Granted FR2361743A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/687,278 US4075037A (en) 1976-05-17 1976-05-17 Tailoring of recovery charge in power diodes and thyristors by irradiation

Publications (2)

Publication Number Publication Date
FR2361743A1 true FR2361743A1 (fr) 1978-03-10
FR2361743B1 FR2361743B1 (https=) 1984-08-10

Family

ID=24759797

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7714925A Granted FR2361743A1 (fr) 1976-05-17 1977-05-16 Adaptation de la charge de recuperation dans des thyristors et des diodes de puissance par irradiation

Country Status (9)

Country Link
US (1) US4075037A (https=)
JP (1) JPS5448487A (https=)
BE (1) BE853880A (https=)
BR (1) BR7702975A (https=)
CA (1) CA1085963A (https=)
DE (1) DE2721912A1 (https=)
FR (1) FR2361743A1 (https=)
GB (1) GB1578258A (https=)
IN (1) IN147814B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230791A (en) * 1979-04-02 1980-10-28 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
IN152079B (https=) * 1980-01-09 1983-10-08 Westinghouse Electric Corp
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
IN153170B (https=) * 1980-07-24 1984-06-09 Westinghouse Electric Corp
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection
US6107106A (en) * 1998-02-05 2000-08-22 Sony Corporation Localized control of integrated circuit parameters using focus ion beam irradiation
KR101753740B1 (ko) 2009-04-28 2017-07-04 삼성전자주식회사 광학 재료, 광학 부품 및 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB339699I5 (https=) * 1973-03-09 1975-01-28
FR2344962A1 (fr) * 1976-03-17 1977-10-14 Westinghouse Electric Corp Procede pour reduire le temps de commutation de composants semi-conducteurs et composants obtenus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3809582A (en) * 1973-03-08 1974-05-07 Westinghouse Electric Corp Irradiation for fast recovery of high power junction diodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB339699I5 (https=) * 1973-03-09 1975-01-28
FR2344962A1 (fr) * 1976-03-17 1977-10-14 Westinghouse Electric Corp Procede pour reduire le temps de commutation de composants semi-conducteurs et composants obtenus

Also Published As

Publication number Publication date
CA1085963A (en) 1980-09-16
BR7702975A (pt) 1978-04-04
BE853880A (fr) 1977-10-24
IN147814B (https=) 1980-07-05
GB1578258A (en) 1980-11-05
DE2721912A1 (de) 1977-12-01
FR2361743B1 (https=) 1984-08-10
JPS5448487A (en) 1979-04-17
JPS5741107B2 (https=) 1982-09-01
US4075037A (en) 1978-02-21

Similar Documents

Publication Publication Date Title
SE7702883L (sv) Minskning av omkopplingstiden hos halvledaranordningar medelst nukleer bestralning
US2998550A (en) Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
FR2361743A1 (fr) Adaptation de la charge de recuperation dans des thyristors et des diodes de puissance par irradiation
FR2274800A1 (fr) Dispositif d'accumulation de chaleur fournie par l'energie du rayonnement solaire a plusieurs etages
CA1262578C (en) SEMICONDUCTOR DEVICE FOR GENERATING AN ELECTRONIC BEAM
GB1140139A (en) Process for the production of the semiconductor element and a semiconductor element produced by this process
GB1467173A (en) Semiconductor diodes
JPS5376678A (en) Semiconductor device
GB1202197A (en) Improvements in or relating to semiconductor radiation detector arrangements
JPS5363610A (en) Liquid reservoir
SU716286A1 (ru) Термолюминесцентное вещество дл гамма-до-зиМЕТРА
Polupanov Energy spectrum and wave functions of an electron in a surface energy well in a semiconductor.
RODOV et al. Possible causes of failures in pulse-switched thyristors
GOBEN Nuclear radiation effects on silicon p-n junctions(Role of space charge region of p-n junctions in semiconductor device degradation)[Final Technical Progress Report, 1 Jun. 1966- 31 May 1971]
EICHINGER et al. High energy electron irradiation to adjust minority carrier lifetimes in production(applications to silicon power devices)[Final Report]
CHAFFIN Transient and permanent radiation effects in Gunn and IMPATT oscillators(Observation of radiation rate effects in diodes)
Stojanović p-Si detectors for alpha particles
KUZHEVSKII et al. Relationship between preflare enhancements of solar cosmic-ray intensity and the X-ray emission from the sun
BENSIMON Ionizing role of photon radiation in a gas thermionic converter(Ionizing role of photon radiation in gas thermionic converter, noting experimental results and application to solar energy converters, tubular emitter converters, etc)
Welch Deception on nuclear power risks: A call for action
POLIMADEI et al. Radiation susceptibility of high power(greater than 200 mW) spontaneous infrared emitters
JPS57184252A (en) Semiconductor radiation detector
JPS5438783A (en) Radiation electromotive force type battery
Babitskii et al. Study of the Kinetics of Annealing of Radiation-Induced Defects in Neutron-Irradiated Silicon
DOLMATOVA et al. The use of a method of retarding potentials in studies, on the''al'fa'' device, of the energy distribution of charged particles(Energy spectrum of plasma emitted particles, using retarding potential method)

Legal Events

Date Code Title Description
ST Notification of lapse
AR Application made for restoration
BR Restoration of rights
ST Notification of lapse