BR112018005532A2 - - Google Patents
Info
- Publication number
- BR112018005532A2 BR112018005532A2 BR112018005532A BR112018005532A BR112018005532A2 BR 112018005532 A2 BR112018005532 A2 BR 112018005532A2 BR 112018005532 A BR112018005532 A BR 112018005532A BR 112018005532 A BR112018005532 A BR 112018005532A BR 112018005532 A2 BR112018005532 A2 BR 112018005532A2
- Authority
- BR
- Brazil
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/936—Multiple bond pads having different shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
- H10W80/732—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having shape changed during the connecting
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/859,323 | 2015-09-20 | ||
| US14/859,323 US10074625B2 (en) | 2015-09-20 | 2015-09-20 | Wafer level package (WLP) ball support using cavity structure |
| PCT/US2016/052631 WO2017049324A1 (en) | 2015-09-20 | 2016-09-20 | Wafer level package (wlp) ball support using cavity structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112018005532A2 true BR112018005532A2 (enExample) | 2018-10-02 |
| BR112018005532B1 BR112018005532B1 (pt) | 2023-03-07 |
Family
ID=57018210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112018005532-8A BR112018005532B1 (pt) | 2015-09-20 | 2016-09-20 | Suporte de esfera de pacote em nível de wafer (wlp) com o uso de estrutura de cavidade |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10074625B2 (enExample) |
| EP (1) | EP3350831A1 (enExample) |
| JP (1) | JP6549790B2 (enExample) |
| KR (1) | KR102006115B1 (enExample) |
| CN (1) | CN108028243B (enExample) |
| BR (1) | BR112018005532B1 (enExample) |
| CA (1) | CA2995621A1 (enExample) |
| WO (1) | WO2017049324A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240057513A (ko) | 2022-10-24 | 2024-05-03 | 삼성전자주식회사 | 반도체 패키지 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3070514B2 (ja) * | 1997-04-28 | 2000-07-31 | 日本電気株式会社 | 突起電極を有する半導体装置、半導体装置の実装方法およびその実装構造 |
| GB2389460A (en) | 1998-12-22 | 2003-12-10 | Nec Corp | Mounting semiconductor packages on substrates |
| JP3019851B1 (ja) * | 1998-12-22 | 2000-03-13 | 日本電気株式会社 | 半導体装置実装構造 |
| JP3446825B2 (ja) * | 1999-04-06 | 2003-09-16 | 沖電気工業株式会社 | 半導体装置およびその製造方法 |
| JP2002050716A (ja) * | 2000-08-02 | 2002-02-15 | Dainippon Printing Co Ltd | 半導体装置及びその作製方法 |
| JP3842548B2 (ja) * | 2000-12-12 | 2006-11-08 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
| US6818545B2 (en) * | 2001-03-05 | 2004-11-16 | Megic Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| JP2003198068A (ja) | 2001-12-27 | 2003-07-11 | Nec Corp | プリント基板、半導体装置、およびプリント基板と部品との電気的接続構造 |
| US6854633B1 (en) * | 2002-02-05 | 2005-02-15 | Micron Technology, Inc. | System with polymer masking flux for fabricating external contacts on semiconductor components |
| JP2004103928A (ja) * | 2002-09-11 | 2004-04-02 | Fujitsu Ltd | 基板及びハンダボールの形成方法及びその実装構造 |
| US7043830B2 (en) | 2003-02-20 | 2006-05-16 | Micron Technology, Inc. | Method of forming conductive bumps |
| US8193092B2 (en) * | 2007-07-31 | 2012-06-05 | Micron Technology, Inc. | Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices |
| WO2009104506A1 (ja) * | 2008-02-19 | 2009-08-27 | 日本電気株式会社 | プリント配線板、電子装置及びその製造方法 |
| JP2012221998A (ja) * | 2011-04-04 | 2012-11-12 | Toshiba Corp | 半導体装置ならびにその製造方法 |
| JP5682496B2 (ja) * | 2011-07-28 | 2015-03-11 | 富士通セミコンダクター株式会社 | 半導体装置、マルチチップ半導体装置、デバイス、及び半導体装置の製造方法 |
| KR101840447B1 (ko) * | 2011-08-09 | 2018-03-20 | 에스케이하이닉스 주식회사 | 반도체 패키지 및 이를 갖는 적층 반도체 패키지 |
| JP2013074054A (ja) * | 2011-09-27 | 2013-04-22 | Renesas Electronics Corp | 電子装置、配線基板、及び、電子装置の製造方法 |
| JP2013080805A (ja) * | 2011-10-03 | 2013-05-02 | Sumitomo Bakelite Co Ltd | 補強部材の製造方法 |
| US9129973B2 (en) * | 2011-12-07 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit probing structures and methods for probing the same |
| US20130154112A1 (en) * | 2011-12-16 | 2013-06-20 | Katholieke Universiteit Leuven, K.U. Leuven R&D | Method for Forming Isolation Trenches in Micro-Bump Interconnect Structures and Devices Obtained Thereof |
| US8963336B2 (en) * | 2012-08-03 | 2015-02-24 | Samsung Electronics Co., Ltd. | Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same |
| US8963335B2 (en) | 2012-09-13 | 2015-02-24 | Invensas Corporation | Tunable composite interposer |
| US9343419B2 (en) * | 2012-12-14 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structures for semiconductor package |
| EP2747132B1 (en) * | 2012-12-18 | 2018-11-21 | IMEC vzw | A method for transferring a graphene sheet to metal contact bumps of a substrate for use in semiconductor device package |
| US10163828B2 (en) * | 2013-11-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and fabricating method thereof |
| US9484318B2 (en) * | 2014-02-17 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
| US20150237732A1 (en) | 2014-02-18 | 2015-08-20 | Qualcomm Incorporated | Low-profile package with passive device |
-
2015
- 2015-09-20 US US14/859,323 patent/US10074625B2/en active Active
-
2016
- 2016-09-20 CA CA2995621A patent/CA2995621A1/en not_active Abandoned
- 2016-09-20 BR BR112018005532-8A patent/BR112018005532B1/pt active IP Right Grant
- 2016-09-20 KR KR1020187010749A patent/KR102006115B1/ko active Active
- 2016-09-20 JP JP2018513651A patent/JP6549790B2/ja not_active Expired - Fee Related
- 2016-09-20 EP EP16774603.1A patent/EP3350831A1/en not_active Withdrawn
- 2016-09-20 CN CN201680053950.8A patent/CN108028243B/zh active Active
- 2016-09-20 WO PCT/US2016/052631 patent/WO2017049324A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP6549790B2 (ja) | 2019-07-24 |
| CA2995621A1 (en) | 2017-03-23 |
| EP3350831A1 (en) | 2018-07-25 |
| BR112018005532B1 (pt) | 2023-03-07 |
| US20170084565A1 (en) | 2017-03-23 |
| KR20180056686A (ko) | 2018-05-29 |
| US10074625B2 (en) | 2018-09-11 |
| CN108028243A (zh) | 2018-05-11 |
| CN108028243B (zh) | 2021-05-14 |
| WO2017049324A1 (en) | 2017-03-23 |
| JP2018527754A (ja) | 2018-09-20 |
| KR102006115B1 (ko) | 2019-07-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 20/09/2016, OBSERVADAS AS CONDICOES LEGAIS |