BR112013010921A2 - dispositivos eletrônicos de energia - Google Patents

dispositivos eletrônicos de energia

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Publication number
BR112013010921A2
BR112013010921A2 BR112013010921A BR112013010921A BR112013010921A2 BR 112013010921 A2 BR112013010921 A2 BR 112013010921A2 BR 112013010921 A BR112013010921 A BR 112013010921A BR 112013010921 A BR112013010921 A BR 112013010921A BR 112013010921 A2 BR112013010921 A2 BR 112013010921A2
Authority
BR
Brazil
Prior art keywords
semiconductor body
contact
electric field
edge region
electronic power
Prior art date
Application number
BR112013010921A
Other languages
English (en)
Inventor
Allan David Crane
David Hinchley
Sean Joseph Loddick
Original Assignee
Ge Energy Power Conversion Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ge Energy Power Conversion Technology Ltd filed Critical Ge Energy Power Conversion Technology Ltd
Publication of BR112013010921A2 publication Critical patent/BR112013010921A2/pt

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    • H—ELECTRICITY
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

dispositivos eletrônicos de energia. a presente invenção refere-se a um dispositivo semicondutor, ou de dispositivo eltrônico de energia. o dispositivo inclui um par de peças de polo (36, 38), cada um tendo uma superfície perfilada (40, 42). um corpo ou disco de semicondutor (30), de preferência de material eletrônico de faixa de banda larga, situa-se entre as peças polares (36, 38) e inclui regiões de metalização de contato (32, 34). o corpo de semicondutores (30) produz um campo elétrico, que emerge a partir de uma região de aresta. passivação meios inclui uma primeira ou radialmente interior da peça (44) em contato com a região da extremidade do corpo semicondutor (30) e o qual se difunde o campo elétrico que emerge a partir da região da borda e uma segunda peça ou peça exterior radialmente (46). a segunda parte (46) está em contato com a primeira parte (44) e fornece uma interface substancialmente livre de vazios com a superfície do perfilado (40, 42) de cada peça de poli (36, 38). o dispositivo pode ser imerso em um líquido dielétrico (50).
BR112013010921A 2010-11-02 2011-10-26 dispositivos eletrônicos de energia BR112013010921A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20100014222 EP2447988B1 (en) 2010-11-02 2010-11-02 Power electronic device with edge passivation
PCT/EP2011/005387 WO2012059193A2 (en) 2010-11-02 2011-10-26 Power electronic devices

Publications (1)

Publication Number Publication Date
BR112013010921A2 true BR112013010921A2 (pt) 2016-08-23

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BR112013010921A BR112013010921A2 (pt) 2010-11-02 2011-10-26 dispositivos eletrônicos de energia

Country Status (6)

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US (1) US9349790B2 (pt)
EP (1) EP2447988B1 (pt)
CN (1) CN103430300B (pt)
BR (1) BR112013010921A2 (pt)
CA (1) CA2815147A1 (pt)
WO (1) WO2012059193A2 (pt)

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US20150262814A1 (en) * 2014-03-13 2015-09-17 Infineon Technologies Ag Power semiconductor device,power electronic module, and method for processing a power semiconductor device
CN107924882B (zh) 2015-05-19 2020-07-28 Abb电网瑞士股份公司 半导体装置
CN108475665B (zh) * 2015-11-05 2022-05-27 日立能源瑞士股份公司 功率半导体器件
CN108717937B (zh) * 2018-05-08 2020-05-22 浙江美晶科技股份有限公司 模塑环氧封装高可靠性半导体器件
EP4006990B1 (en) 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Semiconductor device with a side surface having different partial regions

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US9349790B2 (en) 2016-05-24
EP2447988A1 (en) 2012-05-02
WO2012059193A3 (en) 2012-07-26
CA2815147A1 (en) 2012-05-10
CN103430300A (zh) 2013-12-04
EP2447988B1 (en) 2015-05-06
WO2012059193A2 (en) 2012-05-10
US20130321034A1 (en) 2013-12-05
CN103430300B (zh) 2016-09-21

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