BR0114456A - Dispositivo de comunicação e controlador de polarização configurável - Google Patents

Dispositivo de comunicação e controlador de polarização configurável

Info

Publication number
BR0114456A
BR0114456A BR0114456-1A BR0114456A BR0114456A BR 0114456 A BR0114456 A BR 0114456A BR 0114456 A BR0114456 A BR 0114456A BR 0114456 A BR0114456 A BR 0114456A
Authority
BR
Brazil
Prior art keywords
bias
voltage
communication device
bias control
bias controller
Prior art date
Application number
BR0114456-1A
Other languages
English (en)
Inventor
Hugh J Finlay
Mark Bloom
Thomas Fowler
Original Assignee
Conexant Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conexant Systems Inc filed Critical Conexant Systems Inc
Publication of BR0114456A publication Critical patent/BR0114456A/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/513—Indexing scheme relating to amplifiers the amplifier being made for low supply voltages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)

Abstract

"DISPOSITIVO DE COMUNICAçãO E CONTROLADOR DE POLARIZAçãO CONFIGURáVEL". O controle de polarização (300) provê seletivamente a polarização de um amplificador de potência (120) com base em uma tensão de intervalo de banda (442) gerada pelo controle de polarização, ou por uma tensão de polarização externa ao controle de polarização. Um controlador (420) controla a seleção quer da tensão de intervalo de banda (442) quer da tensão de polarização externa. O controle de polarização é fabricado em um primeiro material semicondutor, capaz de operação em baixos níveis de suprimento de tensão, tal como material semicondutor de óxido de metal complementar (CMOS), e pode ser fabricado em um circuito integrado, comum com um amplificador de potência.
BR0114456-1A 2000-10-06 2001-10-05 Dispositivo de comunicação e controlador de polarização configurável BR0114456A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23884600P 2000-10-06 2000-10-06
US09/693,398 US6639470B1 (en) 2000-10-06 2000-10-21 Constant current biasing circuit for linear power amplifiers
PCT/US2001/031272 WO2002029971A1 (en) 2000-10-06 2001-10-05 Configurable power amplifier and bias control

Publications (1)

Publication Number Publication Date
BR0114456A true BR0114456A (pt) 2003-10-21

Family

ID=26932022

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0114456-1A BR0114456A (pt) 2000-10-06 2001-10-05 Dispositivo de comunicação e controlador de polarização configurável

Country Status (8)

Country Link
US (2) US6639470B1 (pt)
EP (1) EP1325555B1 (pt)
JP (1) JP4323798B2 (pt)
CN (1) CN1294697C (pt)
AT (1) ATE381144T1 (pt)
BR (1) BR0114456A (pt)
DE (1) DE60131868T2 (pt)
WO (1) WO2002029971A1 (pt)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834088B1 (fr) * 2001-12-20 2004-03-19 St Microelectronics Sa Procede et dispositif de polarisation d'un transistor d'un etage amplificateur radiofrequence
US6750722B2 (en) * 2002-06-28 2004-06-15 Freescale Semiconductor, Inc. Bias control for HBT power amplifiers
US6906592B2 (en) * 2002-11-13 2005-06-14 Qualcomm Inc Continuously variable gain radio frequency driver amplifier having linear in decibel gain control characteristics
US7068098B1 (en) * 2002-11-25 2006-06-27 National Semiconductor Corporation Slew rate enhancement circuit
US7875272B2 (en) 2003-06-27 2011-01-25 Ethicon, Incorporated Treatment of stroke and other acute neuraldegenerative disorders using postpartum derived cells
US6822511B1 (en) * 2003-06-27 2004-11-23 Sige Semiconductor Inc. Integrated power amplifier circuit
US6882220B2 (en) * 2003-06-27 2005-04-19 Sige Semiconductor Inc. Integrated power amplifier circuit
PL1641914T3 (pl) 2003-06-27 2017-01-31 DePuy Synthes Products, Inc. Komórki pochodzące z poporodowej tkanki łożyska oraz sposoby uzyskiwania i zastosowania tych komórek
US6917243B2 (en) * 2003-06-27 2005-07-12 Sige Semiconductor Inc. Integrated power amplifier circuit
US7230492B2 (en) * 2004-09-29 2007-06-12 Triquint Semiconductor, Inc. Robust monolithic automatic bias circuit with current setting apparatus
PL1835924T3 (pl) 2004-12-23 2014-01-31 Ethicon Incorporated Leczenie choroby Parkinsona i zaburzeń związanych z tą chorobą z użyciem komórek uzyskiwanych po porodzie
JP2006352202A (ja) * 2005-06-13 2006-12-28 New Japan Radio Co Ltd 電力増幅器
EP1971681B1 (en) 2005-12-16 2017-08-23 DePuy Synthes Products, Inc. Compositions and methods for inhibiting adverse immune response in histocompatibility-mismatched transplantation
CN1987710B (zh) * 2005-12-23 2010-05-05 深圳市芯海科技有限公司 一种电压调整装置
JP4887131B2 (ja) * 2006-12-18 2012-02-29 パナソニック株式会社 電力増幅器
EP2184850A1 (en) * 2008-11-10 2010-05-12 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Biased power amplifier
US8260224B2 (en) 2009-12-02 2012-09-04 Sige Semiconductor Inc. System and method of prebias for rapid power amplifier response correction
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9325281B2 (en) * 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9698853B2 (en) * 2013-07-31 2017-07-04 Skyworks Solutions, Inc. Power amplifier open loop current clamp
US9917549B1 (en) 2013-08-09 2018-03-13 Skyworks Solutions, Inc. Dynamically configurable bias circuit for controlling gain expansion of multi-mode single chain linear power amplifiers
KR102211056B1 (ko) * 2013-12-30 2021-02-02 에스케이하이닉스 주식회사 반도체 장치
US9628029B2 (en) * 2013-12-31 2017-04-18 Skyworks Solutions, Inc. Systems, circuits and methods related to dynamic error vector magnitude corrections
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9806679B2 (en) 2014-09-10 2017-10-31 Skyworks Solutions, Inc. High-linearity CMOS WiFi RF power amplifiers in wide range of burst signals
WO2016109581A2 (en) * 2014-12-30 2016-07-07 Skyworks Solutions, Inc. Integrated cmos transmit/receive switch in a radio frequency device
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US9632522B2 (en) * 2015-04-15 2017-04-25 Skyworks Solutions, Inc. Current mirror bias circuit with voltage adjustment
WO2018089997A1 (en) 2016-11-14 2018-05-17 Regents Of The University Of Colorado, A Body Corporate Compact diode laser source
US11082021B2 (en) 2019-03-06 2021-08-03 Skyworks Solutions, Inc. Advanced gain shaping for envelope tracking power amplifiers
US11444576B2 (en) 2019-09-27 2022-09-13 Skyworks Solutions, Inc. Power amplifier bias modulation for multi-level supply envelope tracking
US11855595B2 (en) 2020-06-05 2023-12-26 Skyworks Solutions, Inc. Composite cascode power amplifiers for envelope tracking applications
US11482975B2 (en) 2020-06-05 2022-10-25 Skyworks Solutions, Inc. Power amplifiers with adaptive bias for envelope tracking applications
US11437992B2 (en) 2020-07-30 2022-09-06 Mobix Labs, Inc. Low-loss mm-wave CMOS resonant switch
US20230327609A1 (en) * 2022-04-07 2023-10-12 Skyworks Solutions, Inc. Amplifier circuit with protection circuit

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387346A (en) * 1979-08-30 1983-06-07 Fackler John D Bias circuit for a microwave transistor power amplifier
US4354163A (en) * 1980-04-30 1982-10-12 Ford Aerospace & Communications Corporation High voltage buffer amplifier
US4340867A (en) * 1980-11-05 1982-07-20 Gte Laboratories Incorporated Inverter amplifier
US5107224A (en) * 1987-10-30 1992-04-21 North American Philips Corporation Wideband single-ended voltage-to-current converter and gain-control circuit
US4816963A (en) * 1987-12-21 1989-03-28 General Motors Corporation Apparatus for protecting a transistor in the event of a shorted load condition
US4935705A (en) * 1988-12-29 1990-06-19 Motorola, Inc. High efficiency variable power amplifier
JPH0456404A (ja) * 1990-06-25 1992-02-24 Nec Corp 増幅装置
US5216383A (en) * 1991-05-21 1993-06-01 U.S. Philips Corporation Controllable amplifier circuit
US5535968A (en) * 1992-07-27 1996-07-16 Union Switch & Signal Inc. Vital railway signal link
US5654672A (en) * 1996-04-01 1997-08-05 Honeywell Inc. Precision bias circuit for a class AB amplifier
US5724004A (en) * 1996-06-13 1998-03-03 Motorola, Inc. Voltage bias and temperature compensation circuit for radio frequency power amplifier
US5760651A (en) * 1996-07-30 1998-06-02 Philips Electronics North America Corporation Inductorless voltage biasing circuit for and Ac-coupled amplifier
US5777518A (en) * 1996-10-30 1998-07-07 Lucent Technologies Inc. Method of biasing mosfet amplifiers for constant transconductance
US6150649A (en) * 1996-11-29 2000-11-21 Imaging Diagnostic Systems, Inc. Detector array with variable gain amplifiers for use in a laser imaging apparatus
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
FI105611B (fi) * 1998-03-13 2000-09-15 Nokia Mobile Phones Ltd Radiotajuusvahvistimet
US6046642A (en) * 1998-09-08 2000-04-04 Motorola, Inc. Amplifier with active bias compensation and method for adjusting quiescent current
JP3841195B2 (ja) * 1998-12-02 2006-11-01 富士通株式会社 差動増幅器
US6201444B1 (en) * 1999-09-01 2001-03-13 Spectrian Corporation Current source bias circuit with hot carrier injection tracking
US6215358B1 (en) * 1999-09-16 2001-04-10 Samsung Electronics Co., Ltd. Temperature compensated bias network for a power amplifier and method of operation
US6242983B1 (en) * 1999-11-15 2001-06-05 Industrial Technology Research Institute Control circuit of variable current source in programmable gain amplifier
US6313705B1 (en) * 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
US6304130B1 (en) * 1999-12-23 2001-10-16 Nortel Networks Limited Bias circuit for depletion mode field-effect transistors
JP3641184B2 (ja) * 2000-03-28 2005-04-20 株式会社東芝 バイポーラトランジスタを用いた高周波電力増幅器
US6300837B1 (en) * 2000-03-28 2001-10-09 Philips Electronics North America Corporation Dynamic bias boosting circuit for a power amplifier
US6441687B1 (en) * 2000-08-29 2002-08-27 Triquint Semiconductor, Inc. Amplifier bias voltage generating circuit and method

Also Published As

Publication number Publication date
US6639470B1 (en) 2003-10-28
CN1468464A (zh) 2004-01-14
CN1294697C (zh) 2007-01-10
EP1325555A4 (en) 2006-04-12
ATE381144T1 (de) 2007-12-15
US7443246B2 (en) 2008-10-28
EP1325555A1 (en) 2003-07-09
JP4323798B2 (ja) 2009-09-02
US20040164805A1 (en) 2004-08-26
DE60131868T2 (de) 2008-12-11
DE60131868D1 (de) 2008-01-24
EP1325555B1 (en) 2007-12-12
JP2004511159A (ja) 2004-04-08
WO2002029971A1 (en) 2002-04-11

Similar Documents

Publication Publication Date Title
BR0114456A (pt) Dispositivo de comunicação e controlador de polarização configurável
ATE434267T1 (de) INTEGRIERTER SCHALTKREIS MIT ENGGEKOPPELTEM HOCHSPANNUNGSAUSGANG UND ßOFFLINEß TRANSISTORPAAR
HK1148393A1 (en) Semiconductor device
WO2003034470A3 (en) Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
IT1317199B1 (it) Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali
SE9502813L (sv) Förstärkare för användning i radiotelefon
GB1316554A (en) High frequency field-effect transistor
CN210052071U (zh) 一种片内集成的开关机控制电路
JPS553215A (en) Semiconductor switch circuit
TWI332324B (en) Track and hold circuit
CN216016526U (zh) 一种双路电源切换电路
ATE254338T1 (de) Stromgesteuerter feldeffekttransistor
US6229405B1 (en) Low-voltage oscillation amplifying circuit
DE60227522D1 (de) Stromgesteuerter leistungsverstärker
AU1387500A (en) Analogue switch
JPS57176781A (en) Superconductive device
CN211981837U (zh) 一种射频放大器保护电路
JPS53130990A (en) Integrated circuit device
CA2027528A1 (en) Integrated circuit
JPH0385917A (ja) アナログスイッチ回路
JPS63141410A (ja) 入出力回路
JPS5235969A (en) Switching circuit
JPH07273558A (ja) 半導体集積回路
EP0109576A3 (de) Transistorelement
FI950400A0 (fi) Symmetrisen bipolaaritransistorin ohjaus

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]