DE60131868D1 - Konfigurierbarer leistungsverstärker und vorspannungsregelung - Google Patents

Konfigurierbarer leistungsverstärker und vorspannungsregelung

Info

Publication number
DE60131868D1
DE60131868D1 DE60131868T DE60131868T DE60131868D1 DE 60131868 D1 DE60131868 D1 DE 60131868D1 DE 60131868 T DE60131868 T DE 60131868T DE 60131868 T DE60131868 T DE 60131868T DE 60131868 D1 DE60131868 D1 DE 60131868D1
Authority
DE
Germany
Prior art keywords
bias
power amplifier
voltage control
constant current
configurable power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60131868T
Other languages
English (en)
Other versions
DE60131868T2 (de
Inventor
Hugh J Finlay
Mark Bloom
Thomas Fowler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Application granted granted Critical
Publication of DE60131868D1 publication Critical patent/DE60131868D1/de
Publication of DE60131868T2 publication Critical patent/DE60131868T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/513—Indexing scheme relating to amplifiers the amplifier being made for low supply voltages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
DE60131868T 2000-10-06 2001-10-05 Konfigurierbarer leistungsverstärker und vorspannungsregelung Expired - Lifetime DE60131868T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23884600P 2000-10-06 2000-10-06
US238846P 2000-10-06
US693398 2000-10-21
US09/693,398 US6639470B1 (en) 2000-10-06 2000-10-21 Constant current biasing circuit for linear power amplifiers
PCT/US2001/031272 WO2002029971A1 (en) 2000-10-06 2001-10-05 Configurable power amplifier and bias control

Publications (2)

Publication Number Publication Date
DE60131868D1 true DE60131868D1 (de) 2008-01-24
DE60131868T2 DE60131868T2 (de) 2008-12-11

Family

ID=26932022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60131868T Expired - Lifetime DE60131868T2 (de) 2000-10-06 2001-10-05 Konfigurierbarer leistungsverstärker und vorspannungsregelung

Country Status (8)

Country Link
US (2) US6639470B1 (de)
EP (1) EP1325555B1 (de)
JP (1) JP4323798B2 (de)
CN (1) CN1294697C (de)
AT (1) ATE381144T1 (de)
BR (1) BR0114456A (de)
DE (1) DE60131868T2 (de)
WO (1) WO2002029971A1 (de)

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US6750722B2 (en) * 2002-06-28 2004-06-15 Freescale Semiconductor, Inc. Bias control for HBT power amplifiers
US6906592B2 (en) * 2002-11-13 2005-06-14 Qualcomm Inc Continuously variable gain radio frequency driver amplifier having linear in decibel gain control characteristics
US7068098B1 (en) * 2002-11-25 2006-06-27 National Semiconductor Corporation Slew rate enhancement circuit
US6882220B2 (en) * 2003-06-27 2005-04-19 Sige Semiconductor Inc. Integrated power amplifier circuit
US6917243B2 (en) * 2003-06-27 2005-07-12 Sige Semiconductor Inc. Integrated power amplifier circuit
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US6822511B1 (en) * 2003-06-27 2004-11-23 Sige Semiconductor Inc. Integrated power amplifier circuit
US7230492B2 (en) * 2004-09-29 2007-06-12 Triquint Semiconductor, Inc. Robust monolithic automatic bias circuit with current setting apparatus
PT1835924E (pt) 2004-12-23 2013-11-19 Ethicon Inc Tratamento da doença de parkinson e desordens relacionadas usando células derivadas do pós-parto
JP2006352202A (ja) * 2005-06-13 2006-12-28 New Japan Radio Co Ltd 電力増幅器
AU2006325710B2 (en) 2005-12-16 2012-05-17 Ethicon, Inc. Compositions and methods for inhibiting adverse immune response in histocompatibility-mismatched transplantation
CN1987710B (zh) * 2005-12-23 2010-05-05 深圳市芯海科技有限公司 一种电压调整装置
JP4887131B2 (ja) * 2006-12-18 2012-02-29 パナソニック株式会社 電力増幅器
EP2184850A1 (de) * 2008-11-10 2010-05-12 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Vorgespannter Leistungsverstärker
US8260224B2 (en) * 2009-12-02 2012-09-04 Sige Semiconductor Inc. System and method of prebias for rapid power amplifier response correction
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9129802B2 (en) 2012-08-27 2015-09-08 Rf Micro Devices, Inc. Lateral semiconductor device with vertical breakdown region
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9325281B2 (en) * 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9698853B2 (en) * 2013-07-31 2017-07-04 Skyworks Solutions, Inc. Power amplifier open loop current clamp
US9917549B1 (en) 2013-08-09 2018-03-13 Skyworks Solutions, Inc. Dynamically configurable bias circuit for controlling gain expansion of multi-mode single chain linear power amplifiers
KR102211056B1 (ko) * 2013-12-30 2021-02-02 에스케이하이닉스 주식회사 반도체 장치
CN110086432B (zh) * 2013-12-31 2024-04-19 天工方案公司 关于动态误差向量幅度校正的系统、电路和方法
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9806679B2 (en) 2014-09-10 2017-10-31 Skyworks Solutions, Inc. High-linearity CMOS WiFi RF power amplifiers in wide range of burst signals
US10135405B2 (en) * 2014-12-30 2018-11-20 Skyworks Solutions, Inc. Dynamic tuning of a transformer-based radio frequency power amplifier
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US9632522B2 (en) * 2015-04-15 2017-04-25 Skyworks Solutions, Inc. Current mirror bias circuit with voltage adjustment
WO2018089997A1 (en) 2016-11-14 2018-05-17 Regents Of The University Of Colorado, A Body Corporate Compact diode laser source
US11082021B2 (en) 2019-03-06 2021-08-03 Skyworks Solutions, Inc. Advanced gain shaping for envelope tracking power amplifiers
US11444576B2 (en) 2019-09-27 2022-09-13 Skyworks Solutions, Inc. Power amplifier bias modulation for multi-level supply envelope tracking
US11855595B2 (en) 2020-06-05 2023-12-26 Skyworks Solutions, Inc. Composite cascode power amplifiers for envelope tracking applications
US11482975B2 (en) 2020-06-05 2022-10-25 Skyworks Solutions, Inc. Power amplifiers with adaptive bias for envelope tracking applications
US11437992B2 (en) 2020-07-30 2022-09-06 Mobix Labs, Inc. Low-loss mm-wave CMOS resonant switch

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US4935705A (en) * 1988-12-29 1990-06-19 Motorola, Inc. High efficiency variable power amplifier
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US5654672A (en) * 1996-04-01 1997-08-05 Honeywell Inc. Precision bias circuit for a class AB amplifier
US5724004A (en) * 1996-06-13 1998-03-03 Motorola, Inc. Voltage bias and temperature compensation circuit for radio frequency power amplifier
US5760651A (en) * 1996-07-30 1998-06-02 Philips Electronics North America Corporation Inductorless voltage biasing circuit for and Ac-coupled amplifier
US5777518A (en) * 1996-10-30 1998-07-07 Lucent Technologies Inc. Method of biasing mosfet amplifiers for constant transconductance
US6150649A (en) * 1996-11-29 2000-11-21 Imaging Diagnostic Systems, Inc. Detector array with variable gain amplifiers for use in a laser imaging apparatus
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
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US6046642A (en) * 1998-09-08 2000-04-04 Motorola, Inc. Amplifier with active bias compensation and method for adjusting quiescent current
JP3841195B2 (ja) * 1998-12-02 2006-11-01 富士通株式会社 差動増幅器
US6201444B1 (en) * 1999-09-01 2001-03-13 Spectrian Corporation Current source bias circuit with hot carrier injection tracking
US6215358B1 (en) * 1999-09-16 2001-04-10 Samsung Electronics Co., Ltd. Temperature compensated bias network for a power amplifier and method of operation
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US6313705B1 (en) * 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
US6304130B1 (en) * 1999-12-23 2001-10-16 Nortel Networks Limited Bias circuit for depletion mode field-effect transistors
JP3641184B2 (ja) * 2000-03-28 2005-04-20 株式会社東芝 バイポーラトランジスタを用いた高周波電力増幅器
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Also Published As

Publication number Publication date
CN1294697C (zh) 2007-01-10
WO2002029971A1 (en) 2002-04-11
EP1325555A4 (de) 2006-04-12
DE60131868T2 (de) 2008-12-11
US7443246B2 (en) 2008-10-28
US6639470B1 (en) 2003-10-28
US20040164805A1 (en) 2004-08-26
CN1468464A (zh) 2004-01-14
JP4323798B2 (ja) 2009-09-02
BR0114456A (pt) 2003-10-21
ATE381144T1 (de) 2007-12-15
JP2004511159A (ja) 2004-04-08
EP1325555B1 (de) 2007-12-12
EP1325555A1 (de) 2003-07-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition