BE881329A - Procede d'acces a une memoire remanente a acces direct et dispositif de memoire - Google Patents
Procede d'acces a une memoire remanente a acces direct et dispositif de memoireInfo
- Publication number
- BE881329A BE881329A BE0/199093A BE199093A BE881329A BE 881329 A BE881329 A BE 881329A BE 0/199093 A BE0/199093 A BE 0/199093A BE 199093 A BE199093 A BE 199093A BE 881329 A BE881329 A BE 881329A
- Authority
- BE
- Belgium
- Prior art keywords
- memory
- access
- remanent
- memory device
- access method
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE881329A true BE881329A (fr) | 1980-05-16 |
Family
ID=21718940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/199093A BE881329A (fr) | 1979-01-24 | 1980-01-24 | Procede d'acces a une memoire remanente a acces direct et dispositif de memoire |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS55101192A (xx) |
| KR (1) | KR830001767B1 (xx) |
| BE (1) | BE881329A (xx) |
| DE (1) | DE3002492A1 (xx) |
| FR (1) | FR2447587B1 (xx) |
| GB (1) | GB2042296B (xx) |
| NL (1) | NL192015C (xx) |
| SE (1) | SE8000392L (xx) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
| WO1980001965A1 (en) * | 1979-03-13 | 1980-09-18 | Ncr Co | Static volatile/non-volatile ram system |
| JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
| JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
| GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
| US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
| JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
| JPH0638502B2 (ja) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | 不揮発性ｒａｍ |
| US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
| JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
| JPS61225860A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体記憶装置 |
| JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
| DE10211337B4 (de) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/ not_active Application Discontinuation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/fr not_active Expired
- 1980-01-23 NL NL8000435A patent/NL192015C/xx not_active IP Right Cessation
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/de active Granted
- 1980-01-24 JP JP738980A patent/JPS55101192A/ja active Granted
- 1980-01-24 BE BE0/199093A patent/BE881329A/fr not_active IP Right Cessation
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/ko active
Also Published As
| Publication number | Publication date |
|---|---|
| DE3002492A1 (de) | 1980-07-31 |
| GB2042296B (en) | 1983-05-11 |
| GB2042296A (en) | 1980-09-17 |
| DE3002492C2 (xx) | 1990-12-20 |
| FR2447587B1 (fr) | 1986-02-28 |
| NL192015B (nl) | 1996-08-01 |
| KR830001767B1 (ko) | 1983-09-03 |
| FR2447587A1 (fr) | 1980-08-22 |
| JPS55101192A (en) | 1980-08-01 |
| SE8000392L (sv) | 1980-07-25 |
| NL8000435A (nl) | 1980-07-28 |
| NL192015C (nl) | 1996-12-03 |
| JPH0115959B2 (xx) | 1989-03-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: XICOR INC. Effective date: 19850124 |