BE813374A - Element de memoire a cinq transistors et procede pour son exploitation - Google Patents

Element de memoire a cinq transistors et procede pour son exploitation

Info

Publication number
BE813374A
BE813374A BE142912A BE142912A BE813374A BE 813374 A BE813374 A BE 813374A BE 142912 A BE142912 A BE 142912A BE 142912 A BE142912 A BE 142912A BE 813374 A BE813374 A BE 813374A
Authority
BE
Belgium
Prior art keywords
exploitation
transistors
procedure
memory element
memory
Prior art date
Application number
BE142912A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE813374A publication Critical patent/BE813374A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
BE142912A 1973-04-06 1974-04-05 Element de memoire a cinq transistors et procede pour son exploitation BE813374A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2317497A DE2317497C2 (de) 1973-04-06 1973-04-06 Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes

Publications (1)

Publication Number Publication Date
BE813374A true BE813374A (fr) 1974-10-07

Family

ID=5877304

Family Applications (1)

Application Number Title Priority Date Filing Date
BE142912A BE813374A (fr) 1973-04-06 1974-04-05 Element de memoire a cinq transistors et procede pour son exploitation

Country Status (12)

Country Link
JP (1) JPS5760714B2 (enrdf_load_stackoverflow)
AT (1) AT338018B (enrdf_load_stackoverflow)
BE (1) BE813374A (enrdf_load_stackoverflow)
CA (1) CA1045716A (enrdf_load_stackoverflow)
CH (1) CH589344A5 (enrdf_load_stackoverflow)
DE (1) DE2317497C2 (enrdf_load_stackoverflow)
FR (1) FR2224836B1 (enrdf_load_stackoverflow)
GB (1) GB1463621A (enrdf_load_stackoverflow)
IT (1) IT1004116B (enrdf_load_stackoverflow)
LU (1) LU69791A1 (enrdf_load_stackoverflow)
NL (1) NL7404635A (enrdf_load_stackoverflow)
SE (1) SE390354B (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS53117340A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS57113492A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit
JPS57173196U (enrdf_load_stackoverflow) * 1982-03-25 1982-11-01
JPS60242581A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPS60242582A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPH0333844U (enrdf_load_stackoverflow) * 1989-08-09 1991-04-03
FR2670061B1 (fr) * 1990-11-30 1996-09-20 Bull Sa Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue.
FR2974667B1 (fr) 2011-04-26 2020-10-02 S O I Tec Silicon On Insulator Tech Amplificateur de detection differentiel sans transistor de commutation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems

Also Published As

Publication number Publication date
GB1463621A (en) 1977-02-02
CA1045716A (en) 1979-01-02
IT1004116B (it) 1976-07-10
SE390354B (sv) 1976-12-13
DE2317497C2 (de) 1975-02-13
JPS49131545A (enrdf_load_stackoverflow) 1974-12-17
FR2224836B1 (enrdf_load_stackoverflow) 1980-08-14
DE2317497B1 (de) 1974-06-20
AT338018B (de) 1977-07-25
FR2224836A1 (enrdf_load_stackoverflow) 1974-10-31
NL7404635A (enrdf_load_stackoverflow) 1974-10-08
CH589344A5 (enrdf_load_stackoverflow) 1977-06-30
ATA222774A (de) 1976-11-15
LU69791A1 (enrdf_load_stackoverflow) 1974-11-21
JPS5760714B2 (enrdf_load_stackoverflow) 1982-12-21

Similar Documents

Publication Publication Date Title
BE789500A (fr) Memoire a semiconducteurs avec elements de memorisation a un seul transistor
BE838421A (fr) Memoire associative comportant des zones pouvant etre associees separement
FR2289027A1 (fr) Element de memoire dynamique a un transistor pour memoires fixes, et procede pour son exploitation
BE788028A (fr) Memoire associative
BE795029A (fr) Installation de cokerie et procede pour son exploitation
BE813374A (fr) Element de memoire a cinq transistors et procede pour son exploitation
BE820274A (fr) Memoire associative
BE820817A (fr) Memoire a disques souples
BE770816A (fr) Dispositif de memoire a semi-conducteur
BE757967A (fr) Memoire pour microprogramme
DK130756B (da) Hukommelsesanordning med reservehukommelseselement.
BE835849A (fr) Element de memoire magnetique echangeable
FR2284165A1 (fr) Element de memoire dynamique a transistors
BE780062A (fr) Ensemble de section de memoire
BE810109A (fr) Agencement de memoire magnetique
BE792287A (fr) Dispositif de memoire magnetique
BE820602A (fr) Dispositif a memoire
IT1030610B (it) Dispositivo di comando segnalatore di direzione a ricmiano automatico
BE823054A (fr) Element de memoire complementaire
BE800605A (fr) Dispositif memoire a semi-conducteur
BE792293A (fr) Dispositif de memoire a semi-conducteur
NL7315229A (nl) Vaste-stof-geheugeninrichting.
BE781195A (fr) Dispositif de memoire magnetique
BE778741A (fr) Circuit pour un element de memoire a semi-conducteur
DK137813B (da) Kantsten med afløbsrende.