NL7404635A - - Google Patents

Info

Publication number
NL7404635A
NL7404635A NL7404635A NL7404635A NL7404635A NL 7404635 A NL7404635 A NL 7404635A NL 7404635 A NL7404635 A NL 7404635A NL 7404635 A NL7404635 A NL 7404635A NL 7404635 A NL7404635 A NL 7404635A
Authority
NL
Netherlands
Application number
NL7404635A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7404635A publication Critical patent/NL7404635A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
NL7404635A 1973-04-06 1974-04-04 NL7404635A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2317497A DE2317497C2 (de) 1973-04-06 1973-04-06 Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes

Publications (1)

Publication Number Publication Date
NL7404635A true NL7404635A (enrdf_load_stackoverflow) 1974-10-08

Family

ID=5877304

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7404635A NL7404635A (enrdf_load_stackoverflow) 1973-04-06 1974-04-04

Country Status (12)

Country Link
JP (1) JPS5760714B2 (enrdf_load_stackoverflow)
AT (1) AT338018B (enrdf_load_stackoverflow)
BE (1) BE813374A (enrdf_load_stackoverflow)
CA (1) CA1045716A (enrdf_load_stackoverflow)
CH (1) CH589344A5 (enrdf_load_stackoverflow)
DE (1) DE2317497C2 (enrdf_load_stackoverflow)
FR (1) FR2224836B1 (enrdf_load_stackoverflow)
GB (1) GB1463621A (enrdf_load_stackoverflow)
IT (1) IT1004116B (enrdf_load_stackoverflow)
LU (1) LU69791A1 (enrdf_load_stackoverflow)
NL (1) NL7404635A (enrdf_load_stackoverflow)
SE (1) SE390354B (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS53117340A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS57113492A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit
JPS57173196U (enrdf_load_stackoverflow) * 1982-03-25 1982-11-01
JPS60242581A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPS60242582A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPH0333844U (enrdf_load_stackoverflow) * 1989-08-09 1991-04-03
FR2670061B1 (fr) * 1990-11-30 1996-09-20 Bull Sa Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue.
FR2974667B1 (fr) 2011-04-26 2020-10-02 S O I Tec Silicon On Insulator Tech Amplificateur de detection differentiel sans transistor de commutation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems

Also Published As

Publication number Publication date
GB1463621A (en) 1977-02-02
CA1045716A (en) 1979-01-02
IT1004116B (it) 1976-07-10
SE390354B (sv) 1976-12-13
DE2317497C2 (de) 1975-02-13
JPS49131545A (enrdf_load_stackoverflow) 1974-12-17
FR2224836B1 (enrdf_load_stackoverflow) 1980-08-14
DE2317497B1 (de) 1974-06-20
AT338018B (de) 1977-07-25
FR2224836A1 (enrdf_load_stackoverflow) 1974-10-31
CH589344A5 (enrdf_load_stackoverflow) 1977-06-30
ATA222774A (de) 1976-11-15
LU69791A1 (enrdf_load_stackoverflow) 1974-11-21
JPS5760714B2 (enrdf_load_stackoverflow) 1982-12-21
BE813374A (fr) 1974-10-07

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