BE744140A - Procede de fabrication de diodes a barriere de schottky et dispositifs utilisant de telles diodes - Google Patents

Procede de fabrication de diodes a barriere de schottky et dispositifs utilisant de telles diodes

Info

Publication number
BE744140A
BE744140A BE744140DA BE744140A BE 744140 A BE744140 A BE 744140A BE 744140D A BE744140D A BE 744140DA BE 744140 A BE744140 A BE 744140A
Authority
BE
Belgium
Prior art keywords
diodes
devices
schottky barrier
manufacturing schottky
manufacturing
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
R T Jenkins
G H Wilson
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Publication of BE744140A publication Critical patent/BE744140A/xx

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
BE744140D 1969-01-10 1970-01-07 Procede de fabrication de diodes a barriere de schottky et dispositifs utilisant de telles diodes BE744140A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79031869A 1969-01-10 1969-01-10

Publications (1)

Publication Number Publication Date
BE744140A true BE744140A (fr) 1970-06-15

Family

ID=25150311

Family Applications (1)

Application Number Title Priority Date Filing Date
BE744140D BE744140A (fr) 1969-01-10 1970-01-07 Procede de fabrication de diodes a barriere de schottky et dispositifs utilisant de telles diodes

Country Status (8)

Country Link
US (1) US3623925A (enExample)
BE (1) BE744140A (enExample)
BR (1) BR6915753D0 (enExample)
CH (1) CH507591A (enExample)
DE (1) DE1965340A1 (enExample)
ES (1) ES375322A1 (enExample)
FR (1) FR2028085A7 (enExample)
NL (1) NL7000279A (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2124142B1 (enExample) * 1971-02-09 1973-11-30 Simplex Appareils
US3969632A (en) * 1971-07-06 1976-07-13 Thomson-Csf Logic circuits-employing junction-type field-effect transistors
JPS555295B2 (enExample) * 1971-09-10 1980-02-05
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3855612A (en) * 1972-01-03 1974-12-17 Signetics Corp Schottky barrier diode semiconductor structure and method
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
GB1434961A (en) * 1973-11-08 1976-05-12 Plessey Co Ltd Integrated circuit arrangements
US3962590A (en) * 1974-08-14 1976-06-08 Bell Telephone Laboratories, Incorporated TTL compatible logic gate circuit
US3996656A (en) * 1974-08-28 1976-12-14 Harris Corporation Normally off Schottky barrier field effect transistor and method of fabrication
US3978393A (en) * 1975-04-21 1976-08-31 Burroughs Corporation High efficiency switching regulator
US4035670A (en) * 1975-12-24 1977-07-12 California Linear Circuits, Inc. Transistor stored charge control using a recombination layer diode
US3987216A (en) * 1975-12-31 1976-10-19 International Business Machines Corporation Method of forming schottky barrier junctions having improved barrier height
DE2656420A1 (de) * 1976-12-13 1978-06-15 Siemens Ag Transistor mit innerer gegenkopplung
US4201998A (en) * 1977-02-18 1980-05-06 Bell Telephone Laboratories, Incorporated Devices with Schottky metal contacts filling a depression in a semi-conductor body
US4282538A (en) * 1977-11-11 1981-08-04 Rca Corporation Method of integrating semiconductor components
US4199860A (en) * 1977-11-11 1980-04-29 Rca Corporation Method of integrating semiconductor components
JPS55125663A (en) * 1979-03-22 1980-09-27 Hitachi Ltd Semiconductor integrated circuit
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
GB2064892B (en) * 1979-12-06 1983-06-22 Marconi Instruments Ltd Frequency multipliers
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
KR20130130770A (ko) * 2010-12-20 2013-12-02 디오데스 제텍스 세미컨덕터즈 리미티드 향상된 스위칭 속도 및 향상된 크로스-오버 제어 및 증가된 출력 전압을 갖는 상보적 달링턴 이미터 팔로워
DE112012004882B4 (de) 2011-11-23 2022-12-29 Acorn Technologies, Inc. Verbesserung von Metallkontakten zu Gruppe-IV-Halbleitern durch Einfügung grenzflächiger atomischer Monoschichten
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
US10170627B2 (en) 2016-11-18 2019-01-01 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법

Also Published As

Publication number Publication date
ES375322A1 (es) 1972-04-16
US3623925A (en) 1971-11-30
NL7000279A (enExample) 1970-07-14
DE1965340A1 (de) 1970-07-23
FR2028085A7 (enExample) 1970-10-09
CH507591A (de) 1971-05-15
BR6915753D0 (pt) 1973-01-02

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