FR2309042A1 - Dispositif semi-conducteur du type a barriere de schottky - Google Patents
Dispositif semi-conducteur du type a barriere de schottkyInfo
- Publication number
- FR2309042A1 FR2309042A1 FR7612308A FR7612308A FR2309042A1 FR 2309042 A1 FR2309042 A1 FR 2309042A1 FR 7612308 A FR7612308 A FR 7612308A FR 7612308 A FR7612308 A FR 7612308A FR 2309042 A1 FR2309042 A1 FR 2309042A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- type semiconductor
- schottky barrier
- barrier type
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50050435A JPS51126761A (en) | 1975-04-25 | 1975-04-25 | Schottky barrier type semi-conductor unit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2309042A1 true FR2309042A1 (fr) | 1976-11-19 |
FR2309042B1 FR2309042B1 (fr) | 1980-04-04 |
Family
ID=12858774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7612308A Granted FR2309042A1 (fr) | 1975-04-25 | 1976-04-26 | Dispositif semi-conducteur du type a barriere de schottky |
Country Status (7)
Country | Link |
---|---|
US (1) | US4062033A (fr) |
JP (1) | JPS51126761A (fr) |
CA (1) | CA1051124A (fr) |
DE (1) | DE2617855A1 (fr) |
FR (1) | FR2309042A1 (fr) |
GB (1) | GB1523004A (fr) |
NL (1) | NL7604388A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2466861A1 (fr) * | 1979-10-05 | 1981-04-10 | Thomson Csf | Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5414684A (en) * | 1977-07-06 | 1979-02-03 | Fuji Electric Co Ltd | Manufacture of schottky barrier diode |
JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
DE3012430A1 (de) * | 1980-03-31 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Planare halbleiteranordnung mit erhoehter durchbruchsspannung |
US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
JPH0618276B2 (ja) * | 1988-11-11 | 1994-03-09 | サンケン電気株式会社 | 半導体装置 |
US5338750A (en) * | 1992-11-27 | 1994-08-16 | Industrial Technology Research Institute | Fabrication method to produce pit-free polysilicon buffer local oxidation isolation |
US5614755A (en) * | 1993-04-30 | 1997-03-25 | Texas Instruments Incorporated | High voltage Shottky diode |
DE19616605C2 (de) * | 1996-04-25 | 1998-03-26 | Siemens Ag | Schottkydiodenanordnung und Verfahren zur Herstellung |
US5930658A (en) * | 1996-11-26 | 1999-07-27 | Advanced Micro Devices, Inc. | Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures |
JPH10163468A (ja) * | 1996-12-03 | 1998-06-19 | Kagaku Gijutsu Shinko Jigyodan | 膜状複合構造体 |
JP3287269B2 (ja) * | 1997-06-02 | 2002-06-04 | 富士電機株式会社 | ダイオードとその製造方法 |
US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
US7528459B2 (en) * | 2003-05-27 | 2009-05-05 | Nxp B.V. | Punch-through diode and method of processing the same |
US7820473B2 (en) * | 2005-03-21 | 2010-10-26 | Semiconductor Components Industries, Llc | Schottky diode and method of manufacture |
US8102694B2 (en) * | 2007-06-25 | 2012-01-24 | Sandisk 3D Llc | Nonvolatile memory device containing carbon or nitrogen doped diode |
US8072791B2 (en) * | 2007-06-25 | 2011-12-06 | Sandisk 3D Llc | Method of making nonvolatile memory device containing carbon or nitrogen doped diode |
TWI641152B (zh) * | 2017-03-24 | 2018-11-11 | 王中林 | 電壓增加而電阻值增加的電阻元件 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2266301A1 (fr) * | 1974-03-30 | 1975-10-24 | Sony Corp |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE300472B (fr) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
US3586542A (en) * | 1968-11-22 | 1971-06-22 | Bell Telephone Labor Inc | Semiconductor junction devices |
JPS5314420B2 (fr) * | 1973-05-14 | 1978-05-17 |
-
1975
- 1975-04-25 JP JP50050435A patent/JPS51126761A/ja active Pending
-
1976
- 1976-04-06 CA CA249,688A patent/CA1051124A/fr not_active Expired
- 1976-04-07 GB GB14166/76A patent/GB1523004A/en not_active Expired
- 1976-04-09 US US05/675,630 patent/US4062033A/en not_active Expired - Lifetime
- 1976-04-23 NL NL7604388A patent/NL7604388A/xx not_active Application Discontinuation
- 1976-04-23 DE DE19762617855 patent/DE2617855A1/de not_active Withdrawn
- 1976-04-26 FR FR7612308A patent/FR2309042A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2266301A1 (fr) * | 1974-03-30 | 1975-10-24 | Sony Corp |
Non-Patent Citations (1)
Title |
---|
NV1046B/75 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2466861A1 (fr) * | 1979-10-05 | 1981-04-10 | Thomson Csf | Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure |
Also Published As
Publication number | Publication date |
---|---|
NL7604388A (nl) | 1976-10-27 |
GB1523004A (en) | 1978-08-31 |
CA1051124A (fr) | 1979-03-20 |
FR2309042B1 (fr) | 1980-04-04 |
JPS51126761A (en) | 1976-11-05 |
DE2617855A1 (de) | 1976-11-04 |
US4062033A (en) | 1977-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2309981A1 (fr) | Dispositif semi-conducteur comportant une heterojonction | |
FR2309042A1 (fr) | Dispositif semi-conducteur du type a barriere de schottky | |
FR2288398A1 (fr) | Dispositif photoelectrique a semi-conducteur | |
FR2342557A1 (fr) | Dispositif semiconducteur a circuit de protection | |
FR2334172B1 (fr) | Dispositif semi-conducteur | |
FR2309983A1 (fr) | Dispositif semi-conducteur de type bipolaire | |
JPS5384464A (en) | Schottky barrier contacting device | |
BE816526A (fr) | Dispositif semiconducteur a element de hall | |
FR2313712A1 (fr) | Dispositif logique de detection de sommes | |
JPS52122471A (en) | Schottky barier semiconductor device | |
FR2349216A1 (fr) | Dispositif semi-conducteur auto-protege | |
FR2275885A1 (fr) | Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires | |
FR2344186A1 (fr) | Dispositif tripolaire a semiconducteurs | |
BE832890A (fr) | Dispositif a semi-conducteur | |
FR2314582A1 (fr) | Dispositif a semi-conducteur du type planaire epitaxial | |
FR2336800A1 (fr) | Structure de dispositif semi-conducteur monolithique | |
FR2316801A1 (fr) | Dispositif de commutation a semi-conducteur | |
BE861272A (fr) | Dispositif a semi-conducteurs | |
FR2288397A1 (fr) | Dispositif semi-conducteur du type mos | |
FR2282721A1 (fr) | Dispositif semi-conducteur | |
FR2276717A1 (fr) | Dispositif de commutation, a detection de tension polyphasee | |
BE796577A (fr) | Dispositif semi-conducteur a barriere de schottky | |
BE808714A (fr) | Dispositif de commutation a semi-conducteur | |
FR2341204A1 (fr) | Dispositif semi-conducteur | |
FR2287772A1 (fr) | Dispositif semi-conducteur |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |