FR2275885A1 - Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires - Google Patents

Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires

Info

Publication number
FR2275885A1
FR2275885A1 FR7516713A FR7516713A FR2275885A1 FR 2275885 A1 FR2275885 A1 FR 2275885A1 FR 7516713 A FR7516713 A FR 7516713A FR 7516713 A FR7516713 A FR 7516713A FR 2275885 A1 FR2275885 A1 FR 2275885A1
Authority
FR
France
Prior art keywords
semiconductor device
minority carriers
isolation barrier
isolation
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7516713A
Other languages
English (en)
Other versions
FR2275885B1 (fr
Inventor
Harvey Ellis Cline
Thomas Richard Anthony
Richard Anthony Kokosa
Elden Duane Wolley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2275885A1 publication Critical patent/FR2275885A1/fr
Application granted granted Critical
Publication of FR2275885B1 publication Critical patent/FR2275885B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
FR7516713A 1974-05-28 1975-05-28 Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires Granted FR2275885A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/474,033 US3988762A (en) 1974-05-28 1974-05-28 Minority carrier isolation barriers for semiconductor devices

Publications (2)

Publication Number Publication Date
FR2275885A1 true FR2275885A1 (fr) 1976-01-16
FR2275885B1 FR2275885B1 (fr) 1979-03-23

Family

ID=23881929

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516713A Granted FR2275885A1 (fr) 1974-05-28 1975-05-28 Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires

Country Status (4)

Country Link
US (1) US3988762A (fr)
JP (1) JPS513181A (fr)
DE (1) DE2523055A1 (fr)
FR (1) FR2275885A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184897A (en) * 1978-09-21 1980-01-22 General Electric Company Droplet migration doping using carrier droplets
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
JPH0821678B2 (ja) * 1987-05-29 1996-03-04 日産自動車株式会社 半導体装置
JPS6457438A (en) * 1987-08-28 1989-03-03 Mitsubishi Electric Corp Recording medium
JPH05121540A (ja) * 1991-10-24 1993-05-18 Mitsubishi Electric Corp 半導体装置の製造方法
US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
TW264575B (fr) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100319332B1 (ko) 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
DE19710375C2 (de) * 1997-03-13 2002-11-07 Micronas Semiconductor Holding Verfahren zum Herstellen von räumlich strukturierten Bauteilen
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
DE102009051828B4 (de) * 2009-11-04 2014-05-22 Infineon Technologies Ag Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
GB1250377A (fr) * 1968-08-24 1971-10-20
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device

Also Published As

Publication number Publication date
US3988762A (en) 1976-10-26
FR2275885B1 (fr) 1979-03-23
DE2523055A1 (de) 1975-12-18
JPS513181A (en) 1976-01-12

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Legal Events

Date Code Title Description
ST Notification of lapse