NL7000279A - - Google Patents
Info
- Publication number
- NL7000279A NL7000279A NL7000279A NL7000279A NL7000279A NL 7000279 A NL7000279 A NL 7000279A NL 7000279 A NL7000279 A NL 7000279A NL 7000279 A NL7000279 A NL 7000279A NL 7000279 A NL7000279 A NL 7000279A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10W20/40—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79031869A | 1969-01-10 | 1969-01-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7000279A true NL7000279A (enExample) | 1970-07-14 |
Family
ID=25150311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7000279A NL7000279A (enExample) | 1969-01-10 | 1970-01-09 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3623925A (enExample) |
| BE (1) | BE744140A (enExample) |
| BR (1) | BR6915753D0 (enExample) |
| CH (1) | CH507591A (enExample) |
| DE (1) | DE1965340A1 (enExample) |
| ES (1) | ES375322A1 (enExample) |
| FR (1) | FR2028085A7 (enExample) |
| NL (1) | NL7000279A (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2124142B1 (enExample) * | 1971-02-09 | 1973-11-30 | Simplex Appareils | |
| US3969632A (en) * | 1971-07-06 | 1976-07-13 | Thomson-Csf | Logic circuits-employing junction-type field-effect transistors |
| JPS555295B2 (enExample) * | 1971-09-10 | 1980-02-05 | ||
| US3907595A (en) * | 1971-12-03 | 1975-09-23 | Communications Satellite Corp | Solar cells with incorporate metal leyer |
| US3855612A (en) * | 1972-01-03 | 1974-12-17 | Signetics Corp | Schottky barrier diode semiconductor structure and method |
| DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
| US3938243A (en) * | 1973-02-20 | 1976-02-17 | Signetics Corporation | Schottky barrier diode semiconductor structure and method |
| GB1434961A (en) * | 1973-11-08 | 1976-05-12 | Plessey Co Ltd | Integrated circuit arrangements |
| US3962590A (en) * | 1974-08-14 | 1976-06-08 | Bell Telephone Laboratories, Incorporated | TTL compatible logic gate circuit |
| US3996656A (en) * | 1974-08-28 | 1976-12-14 | Harris Corporation | Normally off Schottky barrier field effect transistor and method of fabrication |
| US3978393A (en) * | 1975-04-21 | 1976-08-31 | Burroughs Corporation | High efficiency switching regulator |
| US4035670A (en) * | 1975-12-24 | 1977-07-12 | California Linear Circuits, Inc. | Transistor stored charge control using a recombination layer diode |
| US3987216A (en) * | 1975-12-31 | 1976-10-19 | International Business Machines Corporation | Method of forming schottky barrier junctions having improved barrier height |
| DE2656420A1 (de) * | 1976-12-13 | 1978-06-15 | Siemens Ag | Transistor mit innerer gegenkopplung |
| US4201998A (en) * | 1977-02-18 | 1980-05-06 | Bell Telephone Laboratories, Incorporated | Devices with Schottky metal contacts filling a depression in a semi-conductor body |
| US4282538A (en) * | 1977-11-11 | 1981-08-04 | Rca Corporation | Method of integrating semiconductor components |
| US4199860A (en) * | 1977-11-11 | 1980-04-29 | Rca Corporation | Method of integrating semiconductor components |
| JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
| US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
| GB2064892B (en) * | 1979-12-06 | 1983-06-22 | Marconi Instruments Ltd | Frequency multipliers |
| US4982244A (en) * | 1982-12-20 | 1991-01-01 | National Semiconductor Corporation | Buried Schottky clamped transistor |
| US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| KR20130130770A (ko) * | 2010-12-20 | 2013-12-02 | 디오데스 제텍스 세미컨덕터즈 리미티드 | 향상된 스위칭 속도 및 향상된 크로스-오버 제어 및 증가된 출력 전압을 갖는 상보적 달링턴 이미터 팔로워 |
| DE112012004882B4 (de) | 2011-11-23 | 2022-12-29 | Acorn Technologies, Inc. | Verbesserung von Metallkontakten zu Gruppe-IV-Halbleitern durch Einfügung grenzflächiger atomischer Monoschichten |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
| KR102226206B1 (ko) * | 2020-02-06 | 2021-03-11 | 포항공과대학교 산학협력단 | 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법 |
-
1969
- 1969-01-10 US US790318A patent/US3623925A/en not_active Expired - Lifetime
- 1969-12-29 DE DE19691965340 patent/DE1965340A1/de active Pending
- 1969-12-31 BR BR215753/69A patent/BR6915753D0/pt unknown
-
1970
- 1970-01-06 FR FR7000208A patent/FR2028085A7/fr not_active Expired
- 1970-01-07 BE BE744140D patent/BE744140A/xx unknown
- 1970-01-09 CH CH28070A patent/CH507591A/de not_active IP Right Cessation
- 1970-01-09 NL NL7000279A patent/NL7000279A/xx unknown
- 1970-01-10 ES ES375322A patent/ES375322A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES375322A1 (es) | 1972-04-16 |
| BE744140A (fr) | 1970-06-15 |
| US3623925A (en) | 1971-11-30 |
| DE1965340A1 (de) | 1970-07-23 |
| FR2028085A7 (enExample) | 1970-10-09 |
| CH507591A (de) | 1971-05-15 |
| BR6915753D0 (pt) | 1973-01-02 |