BE620887A - - Google Patents

Info

Publication number
BE620887A
BE620887A BE620887DA BE620887A BE 620887 A BE620887 A BE 620887A BE 620887D A BE620887D A BE 620887DA BE 620887 A BE620887 A BE 620887A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE620887A publication Critical patent/BE620887A/xx
Priority claimed from US821101A external-priority patent/US3363984A/en
Priority claimed from US113108A external-priority patent/US3312570A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
BE620887D 1959-06-18 BE620887A (en:Method)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US821101A US3363984A (en) 1959-06-18 1959-06-18 Preparation of iii-v compounds
US113108A US3312570A (en) 1961-05-29 1961-05-29 Production of epitaxial films of semiconductor compound material
US129919A US3364084A (en) 1959-06-18 1961-05-29 Production of epitaxial films
US128237A US3322575A (en) 1959-06-18 1961-07-31 Graded energy gap photoelectromagnetic cell
US434116A US3224913A (en) 1959-06-18 1965-02-19 Altering proportions in vapor deposition process to form a mixed crystal graded energy gap

Publications (1)

Publication Number Publication Date
BE620887A true BE620887A (en:Method)

Family

ID=27537343

Family Applications (2)

Application Number Title Priority Date Filing Date
BE618264D BE618264A (en:Method) 1959-06-18
BE620887D BE620887A (en:Method) 1959-06-18

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BE618264D BE618264A (en:Method) 1959-06-18

Country Status (5)

Country Link
US (3) US3364084A (en:Method)
BE (2) BE620887A (en:Method)
DE (3) DE1132098B (en:Method)
GB (3) GB944872A (en:Method)
NL (4) NL252729A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298209B (de) * 1964-08-19 1969-06-26 Philips Nv Photoelektrische Halbleiterdiode

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3306713A (en) * 1962-09-18 1967-02-28 Merck & Co Inc Semiconductor process and products produced thereby
DE1467360B2 (de) * 1962-12-01 1971-08-12 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einkristalliner schichten aus indiumantimonid
US3310425A (en) * 1963-06-28 1967-03-21 Rca Corp Method of depositing epitaxial layers of gallium arsenide
US3392066A (en) * 1963-12-23 1968-07-09 Ibm Method of vapor growing a homogeneous monocrystal
US3394390A (en) * 1965-03-31 1968-07-23 Texas Instruments Inc Method for making compond semiconductor materials
DE1544265A1 (de) * 1965-07-05 1970-07-09 Siemens Ag Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binaeren,halbleitenden Verbindungen
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3493811A (en) * 1966-06-22 1970-02-03 Hewlett Packard Co Epitaxial semiconductor material on dissimilar substrate and method for producing the same
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet
NL6615059A (en:Method) * 1966-10-25 1968-04-26
US3441453A (en) * 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
NL7100218A (en:Method) * 1970-01-09 1971-07-13
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3836399A (en) * 1970-02-16 1974-09-17 Texas Instruments Inc PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
BE791077A (fr) * 1971-11-09 1973-03-01 Matsushita Electric Ind Co Ltd Element transducteur photoelectrique
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US4284467A (en) * 1972-02-14 1981-08-18 Hewlett-Packard Company Method for making semiconductor material
US3890170A (en) * 1972-02-29 1975-06-17 Motorola Inc Method of making a multicolor light display by graded mesaing
US3928073A (en) * 1972-04-19 1975-12-23 Telecommunications Sa Solar cells
US3733499A (en) * 1972-04-20 1973-05-15 Westinghouse Electric Corp Pyroelectric detector
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
US3790829A (en) * 1972-07-13 1974-02-05 G Roth Thermoelectromagnetic energy conversion system
US3932883A (en) * 1972-08-08 1976-01-13 The British Secretary of State for Defense Photocathodes
US3981755A (en) * 1972-11-24 1976-09-21 U.S. Philips Corporation Photocathode manufacture
US3914136A (en) * 1972-11-27 1975-10-21 Rca Corp Method of making a transmission photocathode device
FR2217068B1 (en:Method) * 1973-02-13 1978-10-20 Labo Electronique Physique
FR2225207B1 (en:Method) * 1973-04-16 1978-04-21 Ibm
US4053918A (en) * 1974-08-05 1977-10-11 Nasa High voltage, high current Schottky barrier solar cell
US3982265A (en) * 1975-09-19 1976-09-21 Bell Telephone Laboratories, Incorporated Devices containing aluminum-V semiconductor and method for making
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses
NL7605234A (nl) * 1976-05-17 1977-11-21 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
JPS5696834A (en) * 1979-12-28 1981-08-05 Mitsubishi Monsanto Chem Co Compound semiconductor epitaxial wafer and manufacture thereof
US4422888A (en) * 1981-02-27 1983-12-27 Xerox Corporation Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition
US4757358A (en) * 1982-03-12 1988-07-12 International Business Machines Corporation MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions
IT1161486B (it) * 1983-06-30 1987-03-18 Cselt Centro Studi Lab Telecom Metodo per la produzione di materiali con trasparenza ottica nell'infrarosso
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
DE3604799A1 (de) * 1986-02-15 1987-08-20 Licentia Gmbh Verfahren zum herstellen von halbleiter-heterouebergaengen
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US4814203A (en) * 1986-09-29 1989-03-21 Ethyl Corporation Vapor deposition of arsenic
US4801557A (en) * 1987-06-23 1989-01-31 Northwestern University Vapor-phase epitaxy of indium phosphide and other compounds using flow-rate modulation
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
GB8821116D0 (en) * 1988-09-08 1989-11-08 Barr & Stroud Ltd Infra-red transmitting optical components and optical coatings therefor
DE3906345A1 (de) * 1989-02-28 1990-08-30 Eckhard Dr Kaufmann Thermoelektrisches wandlerelement
US5274149A (en) * 1991-07-11 1993-12-28 American Cyanamid Company Process for making alkyl arsine compounds
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
US5389396A (en) * 1993-08-11 1995-02-14 Northwestern University InGaAsP/GaAs diode laser
US5384151A (en) * 1993-08-11 1995-01-24 Northwestern University InGaAsP/GaAs diode laser
US5421910A (en) * 1994-02-10 1995-06-06 Northwestern University Intermetallic compound semiconductor thin film
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
US6996150B1 (en) * 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US5888886A (en) * 1997-06-30 1999-03-30 Sdl, Inc. Method of doping gan layers p-type for device fabrication
DE102004048454B4 (de) * 2004-10-05 2008-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
CN105144393B (zh) 2012-12-13 2018-06-29 阿尔法能源技术公司 磁极化的光子器件
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
DE102019008929A1 (de) * 2019-12-20 2021-06-24 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren
DE102019008931B4 (de) * 2019-12-20 2024-04-11 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren
DE102019008927B4 (de) * 2019-12-20 2024-04-11 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en:Method) * 1951-03-07 1900-01-01
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
US2961475A (en) * 1957-05-29 1960-11-22 Rca Corp Solid-state charge carrier valve
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
FR1184921A (fr) * 1957-10-21 1959-07-28 Perfectionnements aux procédés de fabrication par alliage de redresseurs ou de transistrons à jonctions
NL125018C (en:Method) * 1958-03-03
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
NL239785A (en:Method) * 1959-06-02
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
NL252531A (en:Method) * 1959-06-30 1900-01-01
US3186873A (en) * 1959-09-21 1965-06-01 Bendix Corp Energy converter
NL258863A (en:Method) * 1959-12-11
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298209B (de) * 1964-08-19 1969-06-26 Philips Nv Photoelektrische Halbleiterdiode

Also Published As

Publication number Publication date
NL281602A (en:Method)
DE1132098B (de) 1962-06-28
DE1444511A1 (de) 1970-12-17
GB1011979A (en) 1965-12-01
DE1444508A1 (de) 1970-02-19
NL279070A (en:Method)
BE618264A (en:Method)
GB1015708A (en) 1966-01-05
NL129707C (en:Method)
NL252729A (en:Method)
US3322575A (en) 1967-05-30
US3224913A (en) 1965-12-21
US3364084A (en) 1968-01-16
GB944872A (en) 1963-12-18

Similar Documents

Publication Publication Date Title
JPS377501B1 (en:Method)
AT213304B (en:Method)
AT219930B (en:Method)
AT219961B (en:Method)
FR477M (en:Method)
BE575800A (en:Method)
BE586604A (en:Method)
BE586572A (en:Method)
NL129707C (en:Method)
NL132807C (en:Method)
NL132027C (en:Method)
NL122937C (en:Method)
LU39220A1 (en:Method)
LU38193A1 (en:Method)
NL239329A (en:Method)
NL251981A (en:Method)
CH734460A4 (en:Method)
BE596455A (en:Method)
BE586662A (en:Method)
BE586633A (en:Method)
BE579739A (en:Method)
NL253192A (en:Method)
BE38840A (en:Method)
BE586583A (en:Method)
NL237129A (en:Method)