BE546514A - - Google Patents

Info

Publication number
BE546514A
BE546514A BE546514DA BE546514A BE 546514 A BE546514 A BE 546514A BE 546514D A BE546514D A BE 546514DA BE 546514 A BE546514 A BE 546514A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE546514A publication Critical patent/BE546514A/xx

Links

Classifications

    • H10W40/70—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/47—
    • H10P95/00—
    • H10W72/30—
    • H10W76/161—
    • H10W72/075—
    • H10W72/07551—
    • H10W72/07554—
    • H10W72/50—
    • H10W72/884—
    • H10W72/951—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/917—Treatment of workpiece between coating steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
    • Y10T428/12646—Group VIII or IB metal-base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component
    • Y10T428/12722—Next to Group VIII metal-base component
BE546514D 1955-04-22 BE546514A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US50323055 US2793420A (en) 1955-04-22 1955-04-22 Electrical contacts to silicon
US54831055 US2810870A (en) 1955-04-22 1955-11-22 Switching transistor
US385368A US3880880A (en) 1955-04-22 1973-08-03 Substituted 2 -azetidinesulfenic acid

Publications (1)

Publication Number Publication Date
BE546514A true BE546514A (cg-RX-API-DMAC10.html) 1900-01-01

Family

ID=27409714

Family Applications (2)

Application Number Title Priority Date Filing Date
BE546514D BE546514A (cg-RX-API-DMAC10.html) 1955-04-22
BE1006107A BE818419A (fr) 1955-04-22 1974-08-02 Acide 2-azetidinesulfenique substitue

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE1006107A BE818419A (fr) 1955-04-22 1974-08-02 Acide 2-azetidinesulfenique substitue

Country Status (12)

Country Link
US (3) US2793420A (cg-RX-API-DMAC10.html)
JP (1) JPS5041852A (cg-RX-API-DMAC10.html)
BE (2) BE818419A (cg-RX-API-DMAC10.html)
CA (1) CA1024519A (cg-RX-API-DMAC10.html)
CH (2) CH350047A (cg-RX-API-DMAC10.html)
DE (3) DE1061446B (cg-RX-API-DMAC10.html)
ES (1) ES428916A1 (cg-RX-API-DMAC10.html)
FR (3) FR1148115A (cg-RX-API-DMAC10.html)
GB (3) GB818419A (cg-RX-API-DMAC10.html)
IE (1) IE39290B1 (cg-RX-API-DMAC10.html)
IL (1) IL44951A (cg-RX-API-DMAC10.html)
NL (5) NL7410353A (cg-RX-API-DMAC10.html)

Families Citing this family (92)

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US2981645A (en) * 1955-04-22 1961-04-25 Ibm Semiconductor device fabrication
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US3054035A (en) * 1956-05-17 1962-09-11 Gulton Ind Inc Ceramic components and method of making same
US2914715A (en) * 1956-07-02 1959-11-24 Bell Telephone Labor Inc Semiconductor diode
US2898474A (en) * 1956-09-04 1959-08-04 Ibm Semiconductor device encapsulation
NL276978A (cg-RX-API-DMAC10.html) * 1956-09-05
US2881344A (en) * 1956-09-28 1959-04-07 Hyman A Michlin Electroluminescent capacitorphosphor lamp
US3018539A (en) * 1956-11-06 1962-01-30 Motorola Inc Diffused base transistor and method of making same
US2982893A (en) * 1956-11-16 1961-05-02 Raytheon Co Electrical connections to semiconductor bodies
US2937439A (en) * 1956-11-21 1960-05-24 Texas Instruments Inc Method of making ohmic connections to semiconductor devices
US2929137A (en) * 1957-01-04 1960-03-22 Texas Instruments Inc Method of making ohmic connections to silicon semiconductor devices
NL224227A (cg-RX-API-DMAC10.html) * 1957-01-29
US2962797A (en) * 1957-03-12 1960-12-06 John G Mavroides Power transistors
US2935453A (en) * 1957-04-11 1960-05-03 Sylvania Electric Prod Manufacture of semiconductive translating devices
US2981874A (en) * 1957-05-31 1961-04-25 Ibm High speed, high current transistor
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
BE570082A (cg-RX-API-DMAC10.html) * 1957-08-07 1900-01-01
DE1073555B (de) * 1957-11-14 1960-01-21 Compagnie Generale de Telegra phie sans FiI, Paris Nichtlineare Transistoi Schaltungsanordnung
US2957112A (en) * 1957-12-09 1960-10-18 Westinghouse Electric Corp Treatment of tantalum semiconductor electrodes
US3007092A (en) * 1957-12-23 1961-10-31 Hughes Aircraft Co Semiconductor devices
NL235544A (cg-RX-API-DMAC10.html) * 1958-01-28
NL235742A (cg-RX-API-DMAC10.html) * 1958-02-03 1900-01-01
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
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BE580254A (cg-RX-API-DMAC10.html) * 1958-07-17
US3065286A (en) * 1958-07-25 1962-11-20 Conax Corp Thermocouple unit
US3041509A (en) * 1958-08-11 1962-06-26 Bendix Corp Semiconductor device
DE1231996B (de) * 1958-09-17 1967-01-05 Siemens Ag Verfahren zum Reinigen von Silizium-Halbleiterkoerpern
US3071522A (en) * 1958-10-30 1963-01-01 Bell Telephone Labor Inc Low resistance contact for semiconductors
FR1217793A (fr) * 1958-12-09 1960-05-05 Perfectionnements à la fabrication des éléments semi-conducteurs
FR1209312A (fr) * 1958-12-17 1960-03-01 Hughes Aircraft Co Perfectionnements aux dispositifs semi-conducteurs du type à jonction
US3079254A (en) * 1959-01-26 1963-02-26 George W Crowley Photographic fabrication of semiconductor devices
US3219890A (en) * 1959-02-25 1965-11-23 Transitron Electronic Corp Semiconductor barrier-layer device and terminal structure thereon
US3253320A (en) * 1959-02-25 1966-05-31 Transitron Electronic Corp Method of making semi-conductor devices with plated area
US3024179A (en) * 1959-03-12 1962-03-06 Philco Corp Semiconductor device fabrication
US3134159A (en) * 1959-03-26 1964-05-26 Sprague Electric Co Method for producing an out-diffused graded-base transistor
NL252131A (cg-RX-API-DMAC10.html) * 1959-06-30
US3075892A (en) * 1959-09-15 1963-01-29 Westinghouse Electric Corp Process for making semiconductor devices
NL243410A (cg-RX-API-DMAC10.html) * 1959-09-16 1900-01-01
US3027501A (en) * 1959-09-29 1962-03-27 Bell Telephone Labor Inc Semiconductive device
CA673999A (en) * 1959-10-28 1963-11-12 F. Bennett Wesley Diffusion of semiconductor bodies
US3202489A (en) * 1959-12-01 1965-08-24 Hughes Aircraft Co Gold-aluminum alloy bond electrode attachment
NL259236A (cg-RX-API-DMAC10.html) * 1959-12-30
US3219837A (en) * 1960-02-29 1965-11-23 Sanyo Electric Co Negative resistance transistors
DE1152195B (de) * 1960-03-11 1963-08-01 Intermetall Verfahren zum Kontaktieren von mit Aluminium legierten Halbleiter-anordnungen
DE1166382B (de) * 1960-04-14 1964-03-26 Siemens Ag Niederohmige Kontakt-Elektrode fuer Halbleiterbauelemente, insbesondere fuer Tunneldioden
DE1414898A1 (de) * 1960-11-09 1969-01-09 Lucas Industries Ltd Verfahren zur Herstellung von Halbleitern
DE1197552B (de) * 1961-02-22 1965-07-29 Siemens Ag Halbleiteranordnung mit einem das Halbleiter-element gasdicht einschliessenden becherfoermigen Gehaeuse und Verfahren zu ihrer Herstellung
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
US3208887A (en) * 1961-06-23 1965-09-28 Ibm Fast switching diodes
DE1196793B (de) * 1961-08-28 1965-07-15 Elektronik M B H Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente
DE1294560C2 (de) * 1961-08-28 1975-01-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik mbH, 8500 Nürnberg Verfahren zur weichlotkontaktierung eines halbleiterbauelements
US3274454A (en) * 1961-09-21 1966-09-20 Mallory & Co Inc P R Semiconductor multi-stack for regulating charging of current producing cells
NL286405A (cg-RX-API-DMAC10.html) * 1961-12-13
US3287794A (en) * 1962-03-23 1966-11-29 American Radiator & Standard Method of soldering semiconductor discs
US3272659A (en) * 1962-04-05 1966-09-13 Gen Motors Corp Tubular thermoelectric array
NL291461A (cg-RX-API-DMAC10.html) * 1962-04-18
US3126616A (en) * 1962-10-10 1964-03-31 figure
NL302103A (cg-RX-API-DMAC10.html) 1962-12-19
GB1064290A (en) * 1963-01-14 1967-04-05 Motorola Inc Method of making semiconductor devices
NL303035A (cg-RX-API-DMAC10.html) * 1963-02-06 1900-01-01
US3283271A (en) * 1963-09-30 1966-11-01 Raytheon Co Notched semiconductor junction strain transducer
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
GB1065192A (en) * 1963-09-03 1967-04-12 Rosemount Eng Co Ltd Pressure gauge
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
US3274670A (en) * 1965-03-18 1966-09-27 Bell Telephone Labor Inc Semiconductor contact
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
US3421206A (en) * 1965-10-19 1969-01-14 Sylvania Electric Prod Method of forming leads on semiconductor devices
US3463972A (en) * 1966-06-15 1969-08-26 Fairchild Camera Instr Co Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state
US3451030A (en) * 1966-07-01 1969-06-17 Gen Electric Solder-bonded semiconductor strain gauges
US3507732A (en) * 1966-07-05 1970-04-21 Hottinger Messtechnik Baldwin Protection of strain gage transducers
US3479736A (en) * 1966-08-31 1969-11-25 Hitachi Ltd Method of making a semiconductor device
US3607379A (en) * 1968-01-22 1971-09-21 Us Navy Microelectronic interconnection substrate
US3632436A (en) * 1969-07-11 1972-01-04 Rca Corp Contact system for semiconductor devices
US3836399A (en) * 1970-02-16 1974-09-17 Texas Instruments Inc PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg
US3909930A (en) * 1972-05-23 1975-10-07 Motorola Inc Method for fabricating a liquid crystal display device
US3895975A (en) * 1973-02-13 1975-07-22 Communications Satellite Corp Method for the post-alloy diffusion of impurities into a semiconductor
GB1483526A (en) * 1974-02-08 1977-08-24 Gist Brocades Nv Azetidine derivatives
US3958741A (en) * 1974-03-04 1976-05-25 Ppg Industries, Inc. Method of mounting silicon anodes in a chlor-alkali cell
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer
FR2518812A1 (fr) * 1981-12-23 1983-06-24 Cit Alcatel Circuit hybride resistant en pression
US4603805A (en) * 1985-05-20 1986-08-05 Motorola, Inc. Method for enhancing the solderability of nickel layers
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
GB2227700B (en) * 1989-02-01 1992-12-02 Marconi Electronic Devices Methods of joining components
DE19758444C2 (de) * 1997-04-04 1999-12-09 Gruendl & Hoffmann Fluidgekühlte, Rechnereinheit - gesteuerte Baugruppe zum Schalten elektrischer Leistungen
DE19713984A1 (de) * 1997-04-04 1998-10-08 Gruendl & Hoffmann Baugruppe zum Schalten elektrischer Leistungen
US7841542B1 (en) * 2006-11-07 2010-11-30 Howard Rosen System for supplying communications and power to a thermostat over a two-wire system
DE102007005161B4 (de) * 2007-01-29 2009-04-09 Nb Technologies Gmbh Verfahren zur Metallisierung von Substraten

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US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
BE594959A (cg-RX-API-DMAC10.html) * 1943-07-28
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
NL84061C (cg-RX-API-DMAC10.html) * 1948-06-26
NL99536C (cg-RX-API-DMAC10.html) * 1951-03-07 1900-01-01
GB1130445A (en) * 1966-04-26 1968-10-16 Beecham Group Ltd Penicillins
US3840556A (en) * 1971-05-28 1974-10-08 Lilly Co Eli Penicillin conversion by halogen electrophiles and anti-bacterials derived thereby
US3843682A (en) * 1972-05-15 1974-10-22 Lilly Co Eli 2-chlorosulfinyl-3-imido-azetedin-4-ones

Also Published As

Publication number Publication date
US2793420A (en) 1957-05-28
GB842103A (en) 1960-07-20
FR1148115A (fr) 1957-12-04
US2810870A (en) 1957-10-22
NL97268C (cg-RX-API-DMAC10.html) 1900-01-01
JPS5041852A (cg-RX-API-DMAC10.html) 1975-04-16
NL7410353A (nl) 1975-02-05
FR2239470A1 (cg-RX-API-DMAC10.html) 1975-02-28
DE1054587B (de) 1959-04-09
ES428916A1 (es) 1976-08-16
CH350047A (fr) 1960-11-15
DE1061446B (de) 1959-07-16
IE39290B1 (en) 1978-09-13
IL44951A0 (en) 1974-09-10
US3880880A (en) 1975-04-29
FR1172055A (fr) 1959-02-05
NL212349A (cg-RX-API-DMAC10.html) 1900-01-01
IL44951A (en) 1976-09-30
CA1024519A (en) 1978-01-17
GB818419A (en) 1959-08-19
NL107361C (cg-RX-API-DMAC10.html) 1900-01-01
DE2434208A1 (de) 1975-02-13
CH608805A5 (cg-RX-API-DMAC10.html) 1979-01-31
BE818419A (fr) 1975-02-03
GB1473363A (en) 1977-05-11
IE39290L (en) 1975-02-03
FR2239470B1 (cg-RX-API-DMAC10.html) 1979-03-09
NL204361A (cg-RX-API-DMAC10.html) 1900-01-01

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